PHOTODIODE Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large active area. Features Applications l High sensitivity: 0.28 A/W Typ. (λ=405 nm) l High-speed response: 50 MHz Typ. (VR=10 V) l Active area: 5.0 × 5.0 mm l TO-8 metal package l Violet-laser detection and monitor ■ Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 20 -40 to +100 -55 to +125 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency Noise equivalent power Symbol λ λp S ID Ct fc NEP Condition λ=405 nm VR=10 V VR=10 V, f=1 MHz VR=10 V, RL=50 Ω λ=405 nm, -3 dB VR=10 V, λ=λp Min. 0.25 - Typ. 320 to 1000 840 0.28 0.5 60 Max. 5 80 Unit nm nm A/W nA pF 30 50 - MHz - W/Hz1/2 2.5 × 10 -14 1 Si PIN photodiode ■ Photo sensitivity temperature characteristic ■ Spectral response (Typ. Ta=25 ˚C) 0.7 (Typ.) TEMPERATURE COEFFICIENT (%/˚C) +1.5 PHOTO SENSITIVITY (A/W) 0.6 QE=100 % 0.5 0.4 0.3 0.2 0.1 0 200 400 600 +0.5 0 -0.5 200 1000 800 +1.0 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KPINB0290EA KPINB0289EA ■ Terminal capacitance vs. reverse voltage ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) DARK CURRENT 1 nA 100 pA 10 pA 0.1 1 10 (Typ. Ta=25 ˚C) 1 nF TERMINAL CAPACITANCE 10 nA 1 pA 0.01 S9195 100 pF 10 pF 1 pF 0.1 100 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KPINB0292EA KPINB0291EA ■ Dimensional outline (unit: mm) 13.9 ± 0.2 PHOTOSENSITIVE SURFACE 1.9 10.5 ± 0.1 (15) 5.0 ± 0.2 12.35 ± 0.1 0.45 LEAD 7.5 ± 0.2 ANODE TERMINAL MARK 1.4 COMMON TO CASE The borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. KPINA0094EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1068E01 Jan. 2004 DN