PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules. Features Applications l C-L band temperature dependence: ±0.2 dB (-10 ˚C to +85 ˚C) l Small package l Low dark current: 0.5 nA Max. (VR=5 V) l C-L band monitors ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Forward current Operating temperature Storage temperature Symbol VR Max. IF Topr Tstg Condition Value 20 10 -10 to +85 -55 to +125 No condensation No condensation Unit V mA °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Active area Symbol - Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity S Photo response uniformity - Dark current ID Cut-off frequency fc Terminal capacitance Shunt resistance Detectivity Noise equivalent power Linearity Ct Rsh D* NEP - Condition 10 % or more of peak sensitivity λ=1.3 µm λ=λp λ=1.53 to 1.62 µm, T= -10 to 85 °C VR=5 V VR=5 V, RL=50 Ω -3dB VR=5 V, f=1 MHz VR=10 mV λ=λp λ=λp VR=5 V, RL=2 Ω -55 to +10 dBm Min. - Typ. φ0.3 Max. - Unit mm - 0.9 to 1.7 - µm 0.8 0.85 1.55 0.9 0.95 - µm -0.2 - +0.2 dB - 0.2 0.5 nA - 500 - MHz - 6 1000 5 × 1012 4 × 10-15 8 - pF MΩ cm · Hz1/2/W W/Hz1/2 -0.15 - +0.15 dB A/W 1 InGaAs PIN photodiode ■ Spectral response 0.5 G9906-01 ■ Dark current vs. reverse voltage (Typ. λ=1.58 µm, T=10 ˚C standard, Flat window) (Typ. Ta=25 ˚C) 10 nA 0.3 -10 ˚C 0 ˚C 10 ˚C 25 ˚C 35 ˚C 45 ˚C 55 ˚C 65 ˚C 75 ˚C 85 ˚C 0.2 0.1 0 -0.1 -0.2 1 nA DARK CURRENT RELATIVE RESPONSE (dB) 0.4 100 pA 10 pA -0.3 -0.4 -0.5 1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 1.63 1.64 1 pA 0.01 0.1 WAVELENGTH (µm) 1 10 100 REVERSE VOLTAGE (V) KIRDB0341EA KIRDB0339EA ■ Terminal capacitance vs. reverse voltage ■ Shunt resistance vs. element temperature (Typ. Ta=25 ˚C) 1 nF (Typ. VR=10 mV) 1 TΩ SHUNT RESISTANCE TERMINAL CAPACITANCE 100 GΩ 100 pF 10 pF 1 pF 10 GΩ 1 GΩ 100 MΩ 10 MΩ 100 fF 0.01 0.1 1 10 1 MΩ -40 100 REVERSE VOLTAGE (V) -20 0 20 40 60 80 100 ELEMENT TEMPERATURE (˚C) KIRDB0340EA KIRDB0338EA ■ Dimensional outline (unit: mm) +0.25 2.45-0.05 3.3- 0.3 +0.2 PHOTOSENSITIVE SURFACE 10 MIN. 0.45 ± 0.05 25 ± 1 1.6 ± 0.2 0.4 × 0.4 +0.10 1.96-0.05 ANODE CATHODE CHIP CENTER TO BASE CENTER X, Y≤±0.1 KIRDA0186EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KIRD1075E02 Jun. 2006 DN