HAMAMATSU G9906-01

PHOTODIODE
InGaAs PIN photodiode
G9906-01
Small package InGaAs PIN photodiode for C-L band
G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active
area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.
Features
Applications
l C-L band temperature dependence:
±0.2 dB (-10 ˚C to +85 ˚C)
l Small package
l Low dark current: 0.5 nA Max. (VR=5 V)
l C-L band monitors
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Forward current
Operating temperature
Storage temperature
Symbol
VR Max.
IF
Topr
Tstg
Condition
Value
20
10
-10 to +85
-55 to +125
No condensation
No condensation
Unit
V
mA
°C
°C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Active area
Symbol
-
Spectral response range
λ
Peak sensitivity wavelength
λp
Photo sensitivity
S
Photo response uniformity
-
Dark current
ID
Cut-off frequency
fc
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Linearity
Ct
Rsh
D*
NEP
-
Condition
10 % or more of
peak sensitivity
λ=1.3 µm
λ=λp
λ=1.53 to 1.62 µm,
T= -10 to 85 °C
VR=5 V
VR=5 V, RL=50 Ω
-3dB
VR=5 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
VR=5 V, RL=2 Ω
-55 to +10 dBm
Min.
-
Typ.
φ0.3
Max.
-
Unit
mm
-
0.9 to 1.7
-
µm
0.8
0.85
1.55
0.9
0.95
-
µm
-0.2
-
+0.2
dB
-
0.2
0.5
nA
-
500
-
MHz
-
6
1000
5 × 1012
4 × 10-15
8
-
pF
MΩ
cm · Hz1/2/W
W/Hz1/2
-0.15
-
+0.15
dB
A/W
1
InGaAs PIN photodiode
■ Spectral response
0.5
G9906-01
■ Dark current vs. reverse voltage
(Typ. λ=1.58 µm, T=10 ˚C standard, Flat window)
(Typ. Ta=25 ˚C)
10 nA
0.3
-10 ˚C
0 ˚C
10 ˚C
25 ˚C
35 ˚C
45 ˚C
55 ˚C
65 ˚C
75 ˚C
85 ˚C
0.2
0.1
0
-0.1
-0.2
1 nA
DARK CURRENT
RELATIVE RESPONSE (dB)
0.4
100 pA
10 pA
-0.3
-0.4
-0.5
1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 1.63 1.64
1 pA
0.01
0.1
WAVELENGTH (µm)
1
10
100
REVERSE VOLTAGE (V)
KIRDB0341EA
KIRDB0339EA
■ Terminal capacitance vs. reverse voltage
■ Shunt resistance vs. element temperature
(Typ. Ta=25 ˚C)
1 nF
(Typ. VR=10 mV)
1 TΩ
SHUNT RESISTANCE
TERMINAL CAPACITANCE
100 GΩ
100 pF
10 pF
1 pF
10 GΩ
1 GΩ
100 MΩ
10 MΩ
100 fF
0.01
0.1
1
10
1 MΩ
-40
100
REVERSE VOLTAGE (V)
-20
0
20
40
60
80
100
ELEMENT TEMPERATURE (˚C)
KIRDB0340EA
KIRDB0338EA
■ Dimensional outline (unit: mm)
+0.25
2.45-0.05
3.3- 0.3
+0.2
PHOTOSENSITIVE SURFACE
10 MIN.
0.45 ± 0.05
25 ± 1
1.6 ± 0.2
0.4 × 0.4
+0.10
1.96-0.05
ANODE
CATHODE
CHIP CENTER TO BASE CENTER
X, Y≤±0.1
KIRDA0186EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KIRD1075E02
Jun. 2006 DN