IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time. S9840 has a pixel size of 14 × 14 µm and active area of 28.672 (H) × 0.196 (V) mm (2048 × 14 pixels). Features Applications l Optimized structure for full line binning (1D operation) l High quantum efficiency in UV region l Stable UV response l Low dark current (MPP operation) l No image-lag l Spectrometer, etc. ■ General ratings Parameter Pixel size Number of pixels Number of active pixels Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Specification 14 (H) × 14 (V) µm 2080 × 20 pixels 2048 × 14 pixels 28.672 (H) × 0.196 (V) mm 2-phases 2-phases Two-stage MOSFET source follower 22-pin ceramic PGA Quartz glass ■ Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature Storage temperature OD voltage RD voltage OFD voltage ISH voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VOFD VISH VIGH VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +50 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V 1 CCD image sensor S9840 ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Over flow drain voltage Output gate voltage Substrate voltage Test point (input source) Test point (input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Over flow gate voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low High Low Symbol VOD VRD VOFD VOG VSS VISH VIGH VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VOFGH VOFGL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 11.5 11.5 1 -8 4 -9 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 20 12 12 3 0 VRD 0 6 -8 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 22 12.5 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V Symbol CP1V, CP2V CP1H CP2H CSG CRG CTG Min. - Typ. 300 160 5 10 60 Max. - Unit pF pF pF pF pF Typ. Fw × Sv 130 4.0 40 25 5200 200 to 1100 ±3 Max. 120 30 5 ±10 Unit V ke µV/e pA/cm2 e rms MHz nm % V V V V V V ■ Electrical characteristics (Ta=25 °C) Parameter Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Min. Saturation output voltage Vsat Full well capacity Fw CCD node sensitivity Sv Dark current *1 DS Readout noise *2 Nr Readout speed fc Dynamic range *3 DR Spectral response range λ Photo response non-uniformity *4 PRNU *1: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *2: At 2 MHz readout. *3: Dynamic range (DR) = Full well/Readout noise *4: Measured at the half of the full well capacity output. PRNU = 2 Fixed pattern noise (peak to peak) Signal × 100 [%] CCD image sensor ■ Spectral response (without window) S9840 ■ Device structure (Conceptual drawing of top view) (Typ. Ta=25 ˚C) 100 THINNING 80 70 60 B8 B9 B10 B11 3 BEVEL 50 40 30 10 0 200 B4 B1 5 4 3 2 12345 A6 A5 400 600 800 1000 1200 H A4 A11 A2 WAVELENGTH (nm) A1 KMPDB0247EA A8 A7 8 BLANK 3 BEVEL 20 14 SIGNAL OUT V THINNING QUANTUM EFFICIENCY (%) 90 A9 A10 2048 SIGNAL OUT 8 BEVEL 8 BLANK 8 BEVEL KMPDC0210EA ■ Timing chart (Line binning) INTEGRATION PERIOD VERTICAL BINNING PERIOD READOUT PERIOD INTEGRATION PERIOD Tpwv P1V Tovr P2V, TG Tpwh, Tpws P1H, OFG P2H SG Tpwr RG Vos KMPDC0211EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H, OFG Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG (P2V) - P1H Overlap time Tovr *5: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. Remark *5 *5 - - Min. 1 20 50 10 50 10 15 10 3 Typ. 50 50 - Max. - Unit µs ns ns ns % ns ns % ns ns µs 3 CCD image sensor S9840 ■ Dimensional outline (unit: mm) 40.0 +0.7 -0.4 3.1 ± 0.25 0.457 2.0 * ± 0.15 9.0 14.0 +0.6 -0.2 ACTIVE AREA 28.672 3.5 PHOTOSENSITIVE SURFACE INDEX MARK PIN No. 1 B1 A11 7.62 A1 B11 2.54 * Distance between window surface and photosensitive surface KMPDA0186ED ■ Pin connections Pin No. Symbol Function Remark (standard operation) A1 OS Output transistor source, internal RL Output signal A2 OD Output transistor drain DC (+20 V) A3 SS Substrate (GND) GND A4 RD Reset drain DC (+12 V) A5 RG Reset gate Clock (+6/-8 V) A6 OG Output gate DC (+3 V) A7 OFD Output flow drain DC (+12 V) A8 OFG Output flow gate Same pulse as P1H A9 P2H CCD horizontal register clock-2 Clock (+6/-8 V) A10 P1H CCD horizontal resister clock-1 Clock (+6/-8 V) A11 ISH Test point (input source) DC (+12 V) B1 SG Summing gate Same pulse as P2H B2 P2V CCD vertical register clock-2 Clock (+6/-8 V) B3 P1V CCD vertical register clock-1 Clock (+6/-8 V) TG *6 B4 Transfer gate Same pulse as P2V B5 B6 B7 RD Reset drain DC (+12 V) B8 SS Substrate (GND) GND B9 P1V CCD vertical register clock-1 Clock (+6/-8 V) B10 P2V CCD vertical register clock-2 Clock (+6/-8 V) B11 IGH Test point (input gate) GND *6: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1082E09 Aug. 2007 DN 4