HMC152 MICROWAVE CORPORATION PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz SEPTEMBER 1999 Amplifiers 1 Features General Description GAIN: 15 dB typ. The HMC152 is an amplifier with gain controlled with a 5 bit binary word. The magnitude of the voltage gain varies linearly with the value of the control word. This transfer function is used to perform weighted loading of antenna arrays, alignment of monopulse receivers, antenna nulling and digital modulation for communications. The amplifier provides low phase shift vs gain state. Intermodulation performance improves as gain decreases, which is opposite to what occurs in most voltage variable attenuators in which Intermodulation distortion degrades as attenuation is increased. GAIN ADJUSTMENT RANGE: > 20 dB RELATIVE PHASE SHIFT: 10 DEGREES Guaranteed Performance, -55 to +85 deg C Parameter Frequency Min. Typ. Max. 15 Units Gain 1 - 4 GHz 9 12 Gain Adjustment Range 1 - 4 GHz 20 22 dB Return Loss 1 - 4 GHz 5 10 dB Relative Phase Shift (Control Word 2 thru 31) 1 - 4 GHz 10 Input Power for 1dB Compression 1 - 4 GHz -9 dBm Input Third Order Intercept Noise Figure Control Word 31 (Max. Gain): Control Word 2 (Min. Gain): DC Current at Vdd=+5V 1 - 4 GHz +5 7 20 60 dBm dB dB mA 12 Elizabeth Drive, Chelmsford, MA 01824 1-6 Phone: 978-250-3343 1 - 4 GHz Fax: 978-250-3373 12 dB 75 Deg. Web Site: www.hittite.com Phase Compensated 2.5 to 5.0 GHz Variable Gain Amplifier MICROWAVE CORPORATION HMC152 VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz SEPTEMBER 1999 Gain vs Control Word Phase vs Control Word 10 VOLTAGE GAIN (MAGNITUDE) 8 5.145 GHz GAIN AT 3.945 GHz 6 GAIN AT 3.045 GHz 4 2 3.045 GHz 0 1 3.945 GHz -10 Amplifiers RELATIVE PHASE (DEG) GAIN AT 5.145 GHz -20 -30 0 0 2 4 6 0 2 8 10 12 14 16 18 20 22 24 26 28 30 32 CONTROL WORD 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 CONTROL WORD Voltage Gain (magnitude, not dB) is linearly related to the digital control word. Maximum gain is provided for control word 11111 (Decimal 31). Minimum gain is provided for control word 00000 (Decimal 0). Intermediate gain levels are provided for the intervening control words (Decimal 1 through 30) Gain vs Control Word 10 CONTROL WORD: 11111 CONTROL WORD: 11111 10000 10 0 01000 00100 0 RELATIVE GAIN (dB) ABSOLUTE GAIN (dB) 20 Relative Gain vs Control Word 00010 00001 -10 00000 -20 -30 10000 01000 -10 00100 -20 00010 00001 -30 00000 -40 -50 -40 1 2 3 4 5 6 1 2 FREQUENCY (GHz) Relative Phase vs Control Word 4 5 6 Return Loss 20 0 10 CONTROL WORD: 10000 AND 01000 RETURN LOSS (dB) RELATIVE PHASE (DEG) 3 FREQUENCY (GHz) 0 00100 -10 00010 -20 -10 OUTPUT (ALL STATES) -20 INPUT (ALL STATES) -30 PHASE RELATIVE TO CONTROL WORD 11111 -30 -40 1 2 3 4 5 6 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 1 2 3 4 5 6 FREQUENCY (GHz) Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1-7 MICROWAVE CORPORATION HMC152 VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz SEPTEMBER 1999 Schematic VDD +5V 1 Amplifiers Control Voltages RF IN (50 OHMS) State Function 1 Gain Enable 0 Gain Disable RF OUT (50 OHMS) GROUND (BACKSIDE) A5 A4 A3 A2 A1(LSB) GAIN CONTROL WORD Bias Condition +2.5V +/- 0.1V @ 1mA Max. -1V to -5V @ 1mA Max. Absolute Maximum Ratings Supply Voltage +7.0 Vdc Max. Control Voltage +2.5 to -5.0 Vdc Storage Temperature -65 to +150 deg C Operating Temperature -55 to +125 deg C Outline 1.604 (0.0631) VDD 3724 1.604 (0.0631) Hittite OUT ALL DIMENSIONS IN MILLIMETERS (INCHES) IN A5 A4 A3 A2 A1 ALL TOLERANCES ARE ± 0.025 (0.001) DIE THICKNESS IS 0.100 (0.004), BACKSIDE IS GROUND BONDPADS ARE 0.100 (0.004) SQUARE, EQUALLY SPACED AT 0.150 (0.006) CENTERS BONDPAD METALLIZATION: GOLD BACKSIDE METALLIZATION: GOLD (0.0050) (0.0050) 0.127 0.127 12 Elizabeth Drive, Chelmsford, MA 01824 1-8 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com MICROWAVE CORPORATION HANDLING, MOUNTING, BONDING GaAs MMIC DIE SEPTEMBER 1999 Handling Precautions Follow these precautions to avoid permanent damage: Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting As indicated on each data sheet some chips are back-metallized and can be die mounted with AuSn eutectic preforms. All chips can be mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as possible. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1-9 Amplifiers 1 cleaning systems. Static Sensitivity: Follow ESD precautions to protect against >±250V ESD strikes ( see page 8 - 2 ).