HMC174MS8 / 174MS8E v02.0805 Typical Applications Features The HMC174MS8 / HMC174MS8E is ideal for: Ultra Small Package: MSOP8 • ISM Applications High Third Order Intercept: +60 dBm • PCMCIA Wireless Cards Single Positive Supply: +3 to +10V • Portable Wireless High RF power Capabilty Functional Diagram General Description The HMC174MS8 & HMC174MS8E are low-cost SPDT switches in 8-lead MSOP packages for use in transmit-receive applications which require very low distortion at high signal power levels. The device can control signals from DC to 3.0 GHz and is especially suited for 900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM applications with only 0.5 dB loss. The design provides exceptional intermodulation performance; providing a +60 dBm third order intercept at 8 Volt bias. RF1 and RF2 are reflective shorts when “OFF”. Onchip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. 14 SWITCHES - SMT GaAs MMIC T/R SWITCH DC - 3 GHz Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency Typ. Max. Units 0.5 0.5 0.7 1.4 0.7 0.8 1.0 1.8 dB dB dB dB Insertion Loss Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 22 20 17 13 25 24 21 17 dB dB dB dB Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 20 16 13 9 28 21 17 11 dB dB dB dB Input Power for 1dB Compression 0/8V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz 35 34 39 38 dBm dBm Input Third Order Intercept 0/8V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz 55 55 60 60 dBm dBm 10 24 ns ns Switching Characteristics DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 14 - 8 Min. DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Insertion Loss Isolation 0 0 -10 -1 ISOLATION (dB) INSERTION LOSS (dB) -0.5 -1.5 -2 -2.5 -20 -30 -3 -3.5 -4 -40 0 1 2 0 3 1 FREQUENCY (GHz) 2 3 FREQUENCY (GHz) 14 Return Loss SWITCHES - SMT INPUT RETURN LOSS (dB) 0 -10 -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Input 0.1 and 1.0 dB Compression vs. Bias Voltage Input Third Order Intercept vs. Bias Voltage 45 65 60 1db at 1900MHz 900MHz 40 IP3 (dBm) COMPRESSION (dBm) 1dB at 900MHz 35 0.1dB at 900MHz 55 50 1900MHz 45 30 40 0.1dB at 1900MHz 25 35 2 4 6 8 BIAS (Volts) 10 12 2 4 6 8 BIAS (Volts) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 12 14 - 9 HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Compression vs. Bias Voltages Carrier at 900 MHz Carrier at 1900 MHz Bias Vdd Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression Input Power for 0.1 dB Compression Input Power for 1.0 dB Compression (Volts) (dBm) (dBm) (dBm) (dBm) 3 27 31 26 30 4 30 34 29 33 5 32 36 31 35 8 36 39 35 38 10 37 40 36 39 Caution: Do not operate in 1dB compression at power levels above +35dBm and do not ‘hot switch’ power levels greater than +23dBm (Vdd = +5Vdc). 14 Distortion vs. Bias Voltage SWITCHES - SMT 1 Watt Carrier at 900 MHz Bias Vdd Third Order Intercept Second Order Intercept (Volts) (dBm) 3 43 4 48 Second Harmonic Second Order Intercept Second Harmonic (dBm) (dBc) (dBm) (dBm) (dBc) 71 45 42 78 55 85 55 46 88 65 58 5 53 90 56 51 87 8 60 90 58 60 90 59 10 60 90 59 60 90 60 Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc Bias 14 - 10 1 Watt Carrier at 1900 MHz Third Order Intercept Bias Current Control Current Control Current B (Vdc) Idd (uA) Ia (uA) Ib (uA) RF to RF1 Control Input* Signal Path State Vdd (Vdc) A (Vdc) 3 0 0 30 -15 -15 OFF OFF 3 0 Vdd 25 -25 0 ON OFF 3 Vdd 0 25 0 -25 OFF ON 5 0 0 110 -55 -55 OFF OFF 5 0 Vdd 115 -100 -15 ON OFF 5 Vdd 0 115 -15 -100 OFF ON 10 0 0 380 -190 -190 OFF OFF 10 0 Vdd 495 -275 -220 ON OFF 10 Vdd 0 495 -220 -275 OFF ON 5 -Vdd Vdd 600 -600 225 ON OFF 5 Vdd -Vdd 600 225 -600 OFF ON For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com RF to RF2 HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Absolute Maximum Ratings Bias Voltage Range (Vdd) -0.2 to +12 Vdc Control Voltage Range (A & B) -0.2 to +Vdd Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing SWITCHES - SMT 14 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC174MS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC174MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H174 XXXX [2] H174 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 11 HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Typical Application Circuit SWITCHES - SMT 14 Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 14 - 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC174MS8 / 174MS8E v02.0805 GaAs MMIC T/R SWITCH DC - 3 GHz Evaluation Circuit Board SWITCHES - SMT 14 List of Materials for Evaluation PCB 104124 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin C1 - C3 100 pF capacitor, 0402 Pkg. C4 10,000 pF capacitor, 0603 Pkg. U1 HMC174MS8 / HMC174MS8E T/R Switch PCB [2] 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 14 - 13