HMC327MS8G / 327MS8GE v04.0607 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE Saturated Power: +30 dBm Supply Voltage: +5.0 V Power Down Capability Low External Part Count Functional Diagram General Description The HMC327MS8G & HMC327MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 3.0 and 4.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifications, TA = +25° C, Vs = 5V, Vctl = 5V Parameter Min. Frequency Range Gain 17 Gain Variation Over Temperature Max. Units GHz 21 24 dB 0.025 0.035 dB / °C Input Return Loss 15 dB Output Return Loss 8 dB 27 dBm 30 dBm 40 dBm Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 36 Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed 5 - 72 Typ. 3.0 - 4.0 5.0 dB 0.002 / 250 mA Vpd = 5V 7 mA tON, tOFF 40 ns Vpd = 0V/5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 5 Gain vs. Temperature 25 24 20 22 20 15 S21 S11 S22 5 16 GAIN (dB) RESPONSE (dB) 18 10 0 -5 14 +25 C 12 +85 C 10 -40 C 8 -10 6 -15 4 -20 2 -25 2 2.5 3 3.5 4 4.5 0 2.5 5 3 FREQUENCY (GHz) Input Return Loss vs. Temperature 4 4.5 Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) +25 C +85 C -40 C -5 RETURN LOSS (dB) 3.5 FREQUENCY (GHz) AMPLIFIERS - SMT Broadband Gain & Return Loss -10 -15 -20 +25 C +85 C -40 C -5 -10 -25 -30 2.5 3 3.5 4 -15 2.5 4.5 3 FREQUENCY (GHz) 34 34 32 32 30 30 28 28 26 24 +25 C +85 C -40 C 20 18 4.5 4 4.5 26 24 +25 C +85 C -40 C 22 20 18 16 14 2.5 4 Psat vs. Temperature Psat (dBm) P1dB (dBm) P1dB vs. Temperature 22 3.5 FREQUENCY (GHz) 16 3 3.5 FREQUENCY (GHz) 4 4.5 14 2.5 3 3.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 73 HMC327MS8G / 327MS8GE v04.0607 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Power Compression @ 3.5 GHz Output IP3 vs. Temperature 42 Pout (dBm) Gain (dB) 36 PAE (%) OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - SMT 48 30 24 18 12 6 0 -5 -3 -1 1 3 5 7 9 11 13 15 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 2.5 +25 C +85 C -40 C 3 INPUT POWER (dBm) Noise Figure vs. Temperature 4 4.5 Gain & Power vs. Supply Voltage 10 28 32 9 27 31 8 26 30 7 25 29 24 28 23 27 22 26 21 25 GAIN dB) NOISE FIGURE (dB) 3.5 FREQUENCY (GHz) 6 5 4 3 2 20 +25 C +85 C -40 C 1 19 0 3 3.5 4 23 22 18 4.75 4.5 24 P1dB Psat Gain 5 FREQUENCY (GHz) 5.25 Vcc SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature Power Down Isolation 0 0 -5 -10 ISOLATION (dB) ISOLATION (dB) -10 -20 +25 C +85 C -40 C -30 -40 -15 -20 -25 -30 -50 -60 2.5 -35 3 3.5 FREQUENCY (GHz) 5 - 74 4 4.5 -40 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4.5 HMC327MS8G / 327MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 250 200 25 150 Icq 100 15 P1dB Psat Gain 10 50 Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) +16 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C) 1.88 W Thermal Resistance (junction to ground paddle) 34 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 0 5 2.5 Icq (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 30 20 5 Absolute Maximum Ratings 3 3.5 4 4.5 5 Vpd (Vdc) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - SMT Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC327MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H327 XXXX [2] H327 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 75 HMC327MS8G / 327MS8GE v04.0607 AMPLIFIERS - SMT 5 5 - 76 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Pin Descriptions Pin Number Function Description 1 Vpd Power Control Pin. For maximum power, this pin hsould be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3 RFIN This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz. 5, 6 RFOUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the device as possible. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 104991 Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 1.2 pF Capacitor, 0603 Pkg. C5 2.0 pF Capacitor, 0402 Pkg. C6 2.2 μF Capacitor, Tantalum L1 3.0 nH Inductor, 0805 Pkg. R1 130 Ohm Resistor, 0603 Pkg. U1 HMC327MS8G / HMC327MS8GE Amplifier PCB [2] 104829 Eval Board [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 77