HMC240A v00.0211 GaAs MMIC SPDT SWITCH DC - 4 GHz Typical Applications Features The HMC240A is ideal for: Broadband Performance: DC - 4 GHz • Telecom Infrastructure Low Insertion Loss: 0.5 dB @ 2 GHz • Microwave Radio & VSAT High IIP3: +48 dBm • Military & Space Small Size: 0.66 x 0.60 x 0.18 mm • Test Instrumentation General Description Functional Diagram The HMC240A is a low cost GaAs MESFET SPDT switch chip. Covering DC to 4 GHz, this switch offers high isolation and low insertion loss. RF1 and RF2 are reflective shorts when “off”. The switch can operate using either two negative control logic inputs of -5/0V or two positive control voltage logic inputs of 0/+5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. Switches - Chip 7 Pads 3 & 7 are alternate A & B Control Inputs. Electrical Specifications, TA = +25° C, With 0/-5V Control or +5/0V Control, 50 Ohm System Parameter 7-1 Frequency Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz Isolation DC - 4.0 GHz Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz “On State” Min. 24 Typ. Max. Units 0.4 0.5 0.6 0.9 0.7 0.8 0.9 1.4 dB dB dB dB 28 dB 22 16 14 11 dB dB dB dB Input Power for 1 dB Compression 0.5 - 1.0 GHz 0.5 - 4.0 GHz 25 23 30 29 dBm dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone) 0.5 - 1.0 GHz 0.5 - 4.0 GHz 43 40 48 45 dBm dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 4.0 GHz 3 10 ns ns For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC240A v00.0211 GaAs MMIC SPDT SWITCH DC - 4 GHz Insertion Loss vs. Temperature Isolation 0 0 -10 -1 -1.5 ISOLATION (dB) +25 C +85 C -55 C -2 RF1 RF2 -20 -30 -40 -2.5 -50 -3 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 1 1.5 Return Loss 2.5 3 3.5 4 0.1 and 1 dB Input Compression Point 35 0 RFC RF1, RF2, ON 30 P1dB (dBm) -10 -20 -30 25 1.0 dB Compression Point 0.1 dB Compression Point 20 -40 15 -50 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) 7 Input Third Order Intercept Point 60 55 50 IP3 (dBm) RETURN LOSS (dB) 2 FREQUENCY (GHz) FREQUENCY (GHz) Switches - Chip INSERTION LOSS (dB) -0.5 45 40 +25 C +85 C -55 C 35 30 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC240A v00.0211 GaAs MMIC SPDT SWITCH DC - 4 GHz Positive Control Voltage Negative Control Voltage State Bias Condition State Bias Condition Low 0 Vdc @ 5 uA Low -3 Vdc @ 3 uA to -8 Vdc @ 32 uA High +3 Vdc @ 3 uA to +8 Vdc @ 32 uA High 0 Vdc @ 5 uA Control input voltage tolerences are ±0.2 Vdc. Control input voltage tolerences are ±0.2 Vdc. Truth Table: Positive Control Voltage Control Input Switches - Chip 7 7-3 Truth Table: Negative Control Voltage Control Current Signal Path State A (Vdc) B (Vdc) Ia (uA) RFC to RF1 RFC to RF2 A (Vdc) 0 +5 -5 5 ON OFF +5 0 5 -5 OFF ON Ib (uA) Control Input Control Current Signal Path State B (Vdc) Ia (uA) RFC to RF1 RFC to RF2 -5 0 -5 5 ON OFF 0 -5 5 -5 OFF ON Ib (uA) Absolute Maximum Ratings RF Input Power Vctrl= 0/+5 (-5)V < 0.5 GHz 0.5 - 4 GHz +27 dBm +34 dBm Control Voltage Range (A & B= 0/+5V) -0.2 to +10 Vdc Control Voltage Range (A & B= -5/0V) -10 to +0.2 Vdc Storage Temperature -65 to +150 deg C Operating Temperature -55 to +85 deg C ESD Sensitivity (HBM) Class 1A Note: This part can be controlled with either positive or negative voltages per the above table. DC blocks are required at ports RFC, RF1 and RF2 if positive control voltage is used. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC240A v00.0211 GaAs MMIC SPDT SWITCH DC - 4 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-5 (Gel-Pak®) [2] NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.005”. 3.TYPICAL BOND PAD IS 0.004” SQUARE. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4.TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6.PADS 4 AND 6 MUST BE CONNECTED TO RF/DC GROUND. Pad Descriptions Pad Number Function Description 1, 7 A, A (alt.) See truth table and control voltage table. Connect either pad 1 or pad 7 to control logic input. 2, 5, 8 RF1, RFC, RF2 These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required. 3, 9 B, B (alt.) See truth table and control voltage table. Connect either pad 3 or pad 9 to control logic input. 4, 6 AC GND Must be connected to RF/DC ground. Switches - Chip 7 Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC240A v00.0211 GaAs MMIC SPDT SWITCH DC - 4 GHz Assembly Diagram Switches - Chip 7 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC240A v00.0211 GaAs MMIC SPDT SWITCH DC - 4 GHz Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 Switches - Chip Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 7-6