HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G Output IP3: +37 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +5V • Microwave Radio & Test Equipment Industry Standard SOT89 Package Gain: 22 dB • IF & RF Applications Functional Diagram General Description The HMC580ST89 & HMC580ST89E are InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5.0 V, Rbias= 1.8 Ohm, TA = +25° C Parameter Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 1.0 GHz DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 0.50 GHz 0.50 - 1.00 GHz DC - 1.0 GHz DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 0.25 GHz 0.25 - 0.50 GHz 0.50 - 1.00 GHz DC - 1.0 GHz Min. Typ. 19 18.5 15 22 21 17 0.005 35 28 19 12 11 23 22 20.5 19 37 35 33 2.8 dB dB dB dB/ °C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dB 88 mA 19 17.5 16 Max. Note: Data taken with broadband bias tee on device output. 5 - 572 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Units HMC580ST89 / 580ST89E v00.1106 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz 22 20 18 16 S21 S11 S22 14 12 +25C +85C -40C 10 8 6 4 2 0 0.5 1 1.5 2 2.5 0 3 0.3 FREQUENCY (GHz) 0.8 1 1.3 1.5 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 +25C +85C -40C -10 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) 0.5 AMPLIFIERS - SMT 24 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0 -15 -20 -25 -30 -35 -5 -10 -15 +25C +85C -40C -20 -40 -45 -25 0 0.3 0.5 0.8 1 1.3 1.5 0 0.3 FREQUENCY (GHz) 0.5 0.8 1 1.3 1.5 1.3 1.5 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 10 9 -5 8 -10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 5 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss +25C +85C -40C -15 -20 -25 +25C +85C -40C 7 6 5 4 3 2 -30 1 -35 0 0 0.3 0.5 0.8 1 FREQUENCY (GHz) 1.3 1.5 0 0.3 0.5 0.8 1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 573 HMC580ST89 / 580ST89E v00.1106 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Psat vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Psat (dBm) P1dB vs. Temperature P1dB (dBm) +25C +85C -40C 0 0.3 0.5 0.8 1 1.3 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25C +85C -40C 0 1.5 0.3 0.5 FREQUENCY (GHz) 45 OIP3 (dBm) 40 35 30 +25C +85C -40C 20 0 0.3 0.5 0.8 1 1 1.3 1.5 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc = 88 mA @ 850 MHz Output IP3 vs. Temperature 25 0.8 FREQUENCY (GHz) 1.3 1.5 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 FREQUENCY (GHz) 36 32 28 24 20 16 Gain P1dB Psat OIP3 12 8 4 0 4.5 5 5.5 Vs (Vdc) Vcc vs. Icc Over Temperature for Fixed Vs= 5V, RBIAS= 1.8 Ohms ACPR vs. Channel Output Power 94 -20 +85C -25 92 ACPR (dBc) +25C Icc (mA) WCDMA 140MHz WCDMA 400MHz CDMA2000 140MHz CDMA2000 400MHz -30 90 88 86 84 -35 -40 -45 -50 82 -55 -40C 80 78 4.82 -60 -65 4.83 4.84 4.85 Vcc (Vdc) 5 - 574 4.86 4.87 2 4 6 8 10 12 14 CHANNEL OUTPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 16 18 HMC580ST89 / 580ST89E v00.1106 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Collector Bias Voltage (Vcc) +5.5 Vdc RF Input Power (RFin)(Vcc = +4.2 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 9 mW/°C above 85 °C) 0.59 W Thermal Resistance (junction to lead) 110 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - SMT 5 Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC580ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC580ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H580 XXXX [2] H580 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 575 HMC580ST89 / 580ST89E v00.1106 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz AMPLIFIERS - SMT 5 Pin Descriptions Pin Number Function Description Interface Schematic 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V Supply Voltage (Vs) 6V 8V RBIAS VALUE 13 Ω 36 Ω RBIAS POWER RATING ¼W ½W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies with Vs = +5V Frequency (MHz) Component L1 5 - 576 50 250 400 900 270 nH 110 nH 110 nH 56 nH C1, C2 0.01 μF 820 pF 820 pF 100 pF Rbias 0 Ohms 1.5 Ohms 1.5 Ohms 1.8 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC580ST89 / 580ST89E v00.1106 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 116402 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1206 Pkg. L1 Inductor, 0603 Pkg. U1 HMC580ST89 / HMC580ST89E PCB [2] 107368 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [3] Evaluation board tuned for 900 MHz operation For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 577