HMC474MP86 / 474MP86E v01.0705 AMPLIFIERS - SMT 5 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz Designer’s Kit Available Typical Applications Features The HMC474MP86 & HMC474MP86E is an ideal RF/IF gain block for: Gain: 15.5 dB • Cellular / PCS / 3G Output IP3: +22 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +3V to +10V • Microwave Radio & Test Equipment Included in the HMC-DK001 Designer’s Kit Functional Diagram General Description P1dB Output Power: +8 dBm The HMC474MP86 & HMC474MP86E are general purpose SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 6 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage with up to +10 dBm output power. The HMC474MP86 & HMC474MP86E offer 15.5 dB of gain with a +22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5.0 V, Rbias= 110 Ohm, TA = +25° C Parameter Min. Typ. 13 12 10 9 8 7 15.5 14 12 11 10 9 Max. dB dB dB dB dB dB Gain Gain Variation Over Temperature DC - 6.0 GHz 0.01 Input Return Loss DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz 5.0 - 6.0 GHz 15 16 19 16 dB dB dB dB Output Return Loss DC - 5.0 GHz 5.0 - 6.0 GHz 17 13 dB dB Reverse Isolation DC - 4.0 GHz 17 dB Output Power for 1 dB Compression (P1dB) 0.5 - 4.0 GHz 4.0 - 5.0 GHz 5.0 - 6.0 GHz 8 7 6 dBm dBm dBm Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 0.5 - 4.0 GHz 4.0 - 5.0 GHz 5.0 - 6.0 GHz 22 20 17 dBm dBm dBm Noise Figure DC - 5.0 GHz 5.0 - 6.0 GHz 3 3.4 dB dB 25 mA Supply Current (Icq) 5 4 3 0.015 Note: Data taken with broadband bias tee on device output. 5 - 420 Units DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 5.0 - 6.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB/ °C HMC474MP86 / 474MP86E v01.0705 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz 5 Gain vs. Temperature 20 20 15 18 16 14 5 0 GAIN (dB) RESPONSE (dB) 10 S21 S11 S22 -5 12 10 8 6 +25 C +85 C -40 C -10 4 -15 2 -20 0 0 1 2 3 4 5 6 7 8 0 1 FREQUENCY (GHz) 4 5 6 Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 3 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 +25 C +85 C -40 C -10 -15 -20 -25 -25 0 1 2 3 4 5 6 0 1 FREQUENCY (GHz) 2 3 4 5 6 5 6 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 0 6 +25 C +85 C -40 C 5 -5 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 2 AMPLIFIERS - SMT Broadband Gain & Return Loss +25 C +85 C -40 C -10 -15 -20 4 3 2 1 -25 0 0 1 2 3 4 FREQUENCY (GHz) 5 6 0 1 2 3 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 421 HMC474MP86 / 474MP86E v01.0705 P1dB vs. Temperature Psat vs. Temperature 12 12 10 10 8 8 Psat (dBm) P1dB (dBm) 6 4 6 +25 C +85 C -40 C 4 +25 C +85 C -40 C 2 2 0 0 0 1 2 3 4 5 6 0 2 OIP3 (dBm) 25 20 15 +25 C +85 C -40 C 5 0 1 2 3 4 5 6 Gain P1dB 28 Icc (mA) +85 C 25 +25 C 23 -40 C 22 21 20 2.2 2.3 Vcc (Vdc) 2.4 2.5 2.6 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 27 2.1 Psat OIP3 24 20 16 12 8 4 0 3 4 5 6 7 8 9 10 Gain, Power & OIP3 vs. Supply Voltage for Rs = 110 Ohms @ 850 MHz 28 2 6 Vs (Vdc) Icc vs. Vcc Over Temperature for Fixed Vs= 5V, RBIAS= 110 Ohms 24 5 32 FREQUENCY (GHz) 26 4 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 25 mA @ 850 MHz 30 10 3 FREQUENCY (GHz) Output IP3 vs. Temperature 5 - 422 1 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz 32 28 Gain P1dB Psat OIP3 24 20 16 12 8 4 0 4.75 5 Vs (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.25 HMC474MP86 / 474MP86E SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz 5 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6.0 Vdc Collector Bias Current (Icc) 35 mA RF Input Power (RFin)(Vcc = +2.4 Vdc) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 4.3 mW/°C above 85 °C) 0.280 W Thermal Resistance (junction to lead) 232 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - SMT v01.0705 Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 5. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE “MICRO-X PACKAGE” Package Information Part Number Package Body Material Lead Finish MSL Rating HMC474MP86 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC474MP86E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [1] H474 [2] H474 [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 423 HMC474MP86 / 474MP86E v01.0705 AMPLIFIERS - SMT 5 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Application Circuit Recommended Bias Resistor Values for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 3V 5V 6V 8V 10V RBIAS VALUE 30 Ω 110 Ω 150 Ω 240 Ω 300 Ω RBIAS POWER RATING 1/8 W 1/8 W 1/4 W 1/2 W 1/2 W Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 5 - 424 50 900 1900 2200 2400 3500 5200 5500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH 3.3 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC474MP86 / 474MP86E v01.0705 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz 5 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 107179 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1210 Pkg. L1 Inductor, 0603 Pkg. U1 HMC474MP86 / HMC474MP86E PCB [2] 107087 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 425