HMC589ST89 / 589ST89E v02.0907 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC589ST89 / HMC589ST89E is ideal for: P1dB Output Power: +21 dBm • Cellular / PCS / 3G Gain: 21 dB • Fixed Wireless & WLAN Output IP3: +33 dBm • CATV, Cable Modem & DBS Single Supply: +5V • Microwave Radio & Test Equipment Industry Standard SOT89 Package • IF & RF Applications General Description Functional Diagram The HMC589ST89 & HMC589ST89E are InGaP HBT Gain Block MMIC SMT amplifiers covering DC to 4 GHz and packaged in an industry standard SOT89. The amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a LO or PA driver with up to +19 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications. The HMC589ST89(E) offers 20 dB gain and +33 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply. The HMC589ST89(E) InGaP HBT gain block offers excellent output power and gain stability over temperature. Electrical Specifi cations, Vs= 5.0 V, Rbias= 1.8 Ohm, TA = +25° C Parameter Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 5.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz DC - 4.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz Min. Typ. 19 16 14 13 21 19 17 15 0.008 17 11 12 10 23 21 19 19 17.5 33 32 30.5 29 4.0 4.5 82 17.5 16 16 14.5 Max. Units 102 dB dB dB dB dB/ °C dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA Note: Data taken with broadband bias tee on device output. 8 - 154 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC589ST89 / 589ST89E v02.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz 24 20 22 15 20 10 18 16 S21 S11 S22 0 -5 14 12 +25 C +85 C -40 C 10 -10 8 -15 6 -20 4 -25 2 0 -30 0 1 2 3 4 5 6 7 0 8 1 FREQUENCY (GHz) Input Return Loss vs. Temperature 3 4 5 Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) 2 FREQUENCY (GHz) +25 C +85 C -40 C -5 -10 -15 -20 -25 +25C +85C -40C -5 -10 -15 -20 -25 0 1 2 3 4 5 0 1 FREQUENCY (GHz) 2 3 4 5 4 5 FREQUENCY (GHz) Reverse Isolation vs. Temperature DRIVER & GAIN BLOCK AMPLIFIERS - SMT 25 5 8 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss Noise Figure vs. Temperature 10 0 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -5 +25 C +85 C -40 C -10 -15 -20 +25 C +85 C -40 C 7 6 5 4 3 2 -25 1 0 -30 0 1 2 3 FREQUENCY (GHz) 4 5 0 1 2 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 155 HMC589ST89 / 589ST89E v02.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature Psat vs. Temperature 24 28 22 26 24 20 22 Psat (dBm) P1dB (dBm) 18 16 14 12 +25 C +85 C -40 C 10 20 18 16 14 +25 C +85 C -40 C 12 10 8 8 6 6 4 4 0 1 2 3 4 0 5 1 2 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 38 36 34 32 30 28 +25 C +85 C -40 C 24 22 20 0 1 2 4 3 4 5 FREQUENCY (GHz) 36 32 28 24 20 16 Gain P1dB Psat OIP3 12 8 4 0 4.5 5 Vs (Vdc) Vcc vs. Icc Over Temperature for Fixed Vs= 5V, RBIAS= 1.8 Ohms 90 88 +85 C 86 84 Icc (mA) +25 C 82 80 78 76 74 72 70 4.83 -40 C 4.84 4.85 4.86 4.87 4.88 Vcc (Vdc) 8 - 156 5 Gain, Power & OIP3 vs. Supply Voltage @ 850 MHz, Rbias = 1.8 Ohms 40 26 3 FREQUENCY (GHz) Output IP3 vs. Temperature OIP3 (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 HMC589ST89 / 589ST89E v02.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Collector Bias Voltage (Vcc) +5.5 Vdc RF Input Power (RFIN)(Vcc = +5 Vdc) +10 dBm up to 1 GHz +8 dBm from 1-4 GHz Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 8.4 mW/°C above 85 °C) 0.546 W Thermal Resistance (junction to ground paddle) 119 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 Absolute Maximum Ratings 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC589ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC589ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H589 XXXX [2] H589 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 157 HMC589ST89 / 589ST89E v02.0907 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 8 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V RBIAS VALUE 1.8 Ω 13 Ω 38 Ω RBIAS POWER RATING 1/8 W ¼W ½W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 8 - 158 50 900 1900 2200 2400 3500 4000 L1 270 nH 56 nH 24 nH 24 nH 15 nH 8.2 nH 8.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC589ST89 / 589ST89E v02.0907 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz 8 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 116405 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1206 Pkg. L1 Inductor, 0603 Pkg. U1 HMC589ST89 / HMC589ST89E PCB [2] 108370 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [3] Evaluation board tuned for 1.9 GHz operation For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 159