v00.1004 HMC478MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC478MP86 is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +18 dBm • Cellular / PCS / 3G Output IP3: +32 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +5V to +8V • Microwave Radio & Test Equipment Robust 1,000V ESD, Class 1C Functional Diagram General Description Gain: 22 dB The HMC478MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 4 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478MP86 offers 22 dB of gain with a +32 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5.0 V, Rbias= 18 Ohm, TA = +25° C Parameter Min. Typ. 19 15 13 11 22 18 16 14 Max. Gain DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz Gain Variation Over Temperature DC - 4.0 GHz 0.015 Input Return Loss DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 4.0 GHz 15 12 13 dB dB dB Output Return Loss DC - 1.0 GHz 1.0 - 4.0 GHz 20 17 dB dB Reverse Isolation DC - 4.0 GHz Output Power for 1 dB Compression (P1dB) 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 15 13 11 9 dB dB dB dB 0.02 dB/ °C 20 dB 18 16 14 12 dBm dBm dBm dBm 32 29 25 dBm dBm dBm Note: Data taken with broadband bias tee on device output. 8 - 366 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478MP86 v00.1004 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 30 25 20 10 GAIN (dB) RESPONSE (dB) 15 5 S21 S11 S22 0 -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 8 Gain vs. Temperature 7 8 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 +25 C +85 C -40 C 0 FREQUENCY (GHz) 1 2 3 4 5 FREQUENCY (GHz) Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -10 -15 -20 +25 C +85 C -40 C -25 AMPLIFIERS - SMT Broadband Gain & Return Loss +25 C +85 C -40 C -10 -15 -20 -25 -30 -30 0 1 2 3 4 5 0 1 FREQUENCY (GHz) 2 3 4 5 4 5 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 10 8 -10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 9 -5 +25 C +85 C -40 C -15 -20 +25 C +85 C -40 C 7 6 5 4 3 2 -25 1 -30 0 0 1 2 3 FREQUENCY (GHz) 4 5 0 1 2 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 367 HMC478MP86 v00.1004 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz P1dB vs. Temperature Psat vs. Temperature 24 24 22 22 20 20 18 18 16 16 Psat (dBm) P1dB (dBm) 14 12 10 +25 C 8 6 14 12 10 +25C +85C -40C 8 +85 C -40 C 6 4 4 2 2 0 0 0 1 2 3 4 5 0 FREQUENCY (GHz) 35 OIP3 (dBm) 30 25 +25 C +85 C -40 C 15 10 0 1 2 3 4 5 Icc (mA) +25 C 60 -40 C 50 45 3.8 3.9 4 Vcc (Vdc) 8 - 368 4.1 4.2 4.3 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) +85 C 70 40 3.7 5 32 28 24 20 16 12 Gain P1dB Psat OIP3 8 4 0 5 6 7 8 Gain, Power & OIP3 vs. Supply Voltage for Rs = 18 Ohms @ 850 MHz 80 55 4 Vs (Vdc) Vcc vs. Icc Over Temperature for Fixed Vs= 5V, RBIAS= 18 Ohms 65 3 36 FREQUENCY (GHz) 75 2 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 62 mA @ 850 MHz Output IP3 vs. Temperature 20 1 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 8 36 32 28 24 20 16 12 Gain P1dB Psat OIP3 8 4 0 4.5 5 Vs (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 v00.1004 HMC478MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 8 Collector Bias Voltage (Vcc) +6.0 Vdc Collector Bias Current (Icc) 100 mA RF Input Power (RFin)(Vcc = +4.3 Vdc) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 9 mW/°C above 85 °C) 0.583 W Thermal Resistance (junction to lead) 111.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1C AMPLIFIERS - SMT Absolute Maximum Ratings %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE “MICRO-X PACKAGE” 8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 369 HMC478MP86 v00.1004 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 8 Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Application Circuit Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V RBIAS VALUE 18 Ω 35 Ω 67 Ω RBIAS POWER RATING 1/8 W 1/4 W 1/2 W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 8 - 370 50 900 1900 2200 2400 3500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC478MP86 v00.0603 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 110170* Item Description J1 - J2 PC Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor, Tantalum R1 Resistor, 1210 Pkg. L1 Inductor, 0603 Pkg. U1 HMC478MP86 PCB** 107087 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 371