HMC-ALH369 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2.0 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios P1dB Output Power: +11 dBm • Phased Arrays Supply Voltage: +5V @ 66 mA • VSAT Die Size: 2.10 x 1.37 x 0.1 mm • SATCOM General Description Functional Diagram The HMC-ALH369 is a GaAs MMIC HEMT three stage, self-biased Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 22 dB of gain, from a single bias supply of +5V @ 66 mA with a noise figure of 2 dB. The HMC-ALH369 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (2.88 mm2). Electrical Specifi cations [1], TA = +25° C, Vdd= +5V, Idd = 66mA Parameter Min. Frequency Range Gain Typ. 20 2 Input Return Loss 12 Output Return Loss Supply Current (Idd) Min. 15 2.5 11 66 Max. dB 2.5 8 9 dB dB 12 dB 11 dBm 66 mA [1] Unless otherwise indicated, all measurements are from probed die 0 - 30 Units GHz 17 2.1 12 9 Typ. 32 - 40 22 Noise Figure Output Power for 1 dB Compression Max. 24 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH369 v00.1007 Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency AMPLIFIERS - LOW NOISE - CHIP GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 5V, Id = 66 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 - 31 HMC-ALH369 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Absolute Maximum Ratings AMPLIFIERS - LOW NOISE - CHIP Drain Bias Voltage +5.5 Vdc RF Input Power (24 - 32 GHz) 5 dBm RF Input Power (32 - 40 GHz) -1 dBm Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” 0 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com