HMC-ALH382 v01.0108 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Typical Applications Features This HMC-ALH382 is ideal for: Noise Figure: 3.8 dB • Short Haul / High Capacity Links P1dB: +12 dBm • Wireless LANs Gain: 21 dB • Military & Space Supply Voltage: +2.5V 50 Ohm Matched Input/Output Die Size: 1.55 x 0.73 x 0.1 mm General Description Functional Diagram The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd = 2.5V, Idd = 64 mA* Parameter Min. Frequency Range Gain Typ. Max. 57 - 65 19 GHz 21 dB Noise Figure 4 5.5 Input Return Loss 12 dB Output Return Loss 10 dB Output Power for 1 dB Compression (P1dB) 12 dBm Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 64 dB 100 *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd total = 64 mA 1 - 174 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 6 25 5 NOISE FIGURE (dB) 30 GAIN (dB) 20 15 10 5 4 3 2 1 0 0 57 59 61 63 65 57 59 FREQUENCY (GHz) 61 63 65 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 1 Noise Figure vs. Frequency -10 -15 -10 LOW NOISE AMPLIFIERS - CHIP Linear Gain vs. Frequency -15 -20 -20 57 59 61 FREQUENCY (GHz) 63 65 57 59 61 63 65 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 175 HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz LOW NOISE AMPLIFIERS - CHIP 1 1 - 176 Wideband Linear Gain Wideband Input Return Loss Wideband Output Return Loss For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power -5 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate WP - 8 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. LOW NOISE AMPLIFIERS - CHIP 1 Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 177 HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz LOW NOISE AMPLIFIERS - CHIP 1 1 - 178 Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 3 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 4 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 179