HWF1682RA L-Band GaAs Power FET January 2006 V4 Outline Dimensions Features • High Output Power: P1dB=37 dBm (typ.) • High Gain: GL=11.5 dB (typ.) • High Efficiency: PAE =45% (typ.) • High Linearity: IP3=48 dBm(typ.) • Class A or Class AB Operation • Low Cost Description The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package. RA Package (Ceramic) Absolute Maximum Ratings VDS [1] Drain to Source Voltage +15V Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 10 mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C Power Dissipation 15 W VGS PT [1] [2] [2] Hexawave recommends that the quiescent drain-source operating voltage (VDS) should not exceed 10 Volts. Mounted on an infinite heat sink. Electrical Specification at 25°C Symbol Parameters Conditions Units Min. Typ. Max. mA 1500 2000 2600 IDSS Saturated Drain Current VDS=3V, VGS=0V VP Pinch-off Voltage VDS=3V, IDS=100 mA V -3.5 -2.0 -1.5 gm Transconductance VDS=3V, IDS=1000 mA mS - 1000 - Rth Thermal Resistance Channel to Case °C/W - 7 10 P1dB Output Power @1dB Gain VDS=10V dBm 36.0 37.0 - GL Linear Power Gain dB 10.5 11.5 - PAE Power-added Efficiency (Pout = P1dB) % - 40 - dBm - 48 - IP3 IDS=0.5IDSS [3] Third-order Intercept Point f=2.4 GHz [3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice. HWF1682RA L-Band GaAs Power FET January 2005 V4 Typical Performance at 25°C Output Power, Efficiency & Gain vs. Input Power VDS=10V, IDS=0.5IDSS 50 35 40 Pout η η Gain (dB) 30 add 25 (%) 40 add Pout (dBm) f=2.4GHz 30 20 20 15 Gain 10 10 5 0 0 10 12 14 16 18 20 22 24 26 28 30 Pin (dBm) Total Power Dissipation,PT (W) Power Derating Curve 16 (25,15) 12 8 4 (175,0) 0 0 50 100 150 200 Case Temperature,TC (℃) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. . HWF1682RA L-Band GaAs Power FET January 2005 V4 Typical S-Parameters (Common Source, TA=25°C, VDS=10V, IDS=0.5IDSS) S11 Freq S21 S12 S22 (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 0.5 0.957 -152.240 5.836 93.270 0.022 7.790 0.516 -169.860 0.6 0.958 -158.920 4.912 88.030 0.022 5.880 0.518 -171.630 0.7 0.955 -163.540 4.247 83.630 0.022 3.140 0.519 -172.930 0.8 0.959 -167.680 3.740 79.260 0.023 1.820 0.523 -173.550 0.9 0.959 -171.130 3.347 75.390 0.022 -0.260 0.525 -174.270 1.0 0.964 -174.110 3.008 71.960 0.022 -2.230 0.528 -174.840 1.1 0.967 -176.660 2.738 68.580 0.022 -4.410 0.532 -175.180 1.2 0.970 -178.890 2.499 65.350 0.022 -4.110 0.539 -175.490 1.3 0.974 179.350 2.306 62.250 0.021 -4.020 0.545 -175.950 1.4 0.976 177.410 2.135 59.190 0.021 -4.810 0.548 -176.090 1.5 0.980 175.900 1.979 56.240 0.021 -6.110 0.554 -176.720 1.6 0.980 174.170 1.852 53.480 0.021 -6.420 0.560 -176.980 1.7 0.982 172.590 1.733 50.650 0.021 -7.700 0.568 -177.250 1.8 0.984 171.100 1.632 47.870 0.021 -8.290 0.574 -177.590 1.9 0.984 169.790 1.539 45.170 0.020 -8.920 0.582 -178.040 2.0 0.983 168.610 1.459 42.660 0.020 -9.030 0.591 -178.560 2.1 0.988 167.130 1.382 39.890 0.019 -9.200 0.597 -179.020 2.2 0.982 165.970 1.311 37.480 0.020 -9.880 0.608 -179.290 2.3 0.984 164.680 1.249 34.980 0.019 -9.760 0.617 -179.570 2.4 0.983 163.500 1.191 32.690 0.019 -10.090 0.623 -179.900 2.5 0.979 162.420 1.141 30.440 0.019 -10.290 0.632 179.530 2.6 0.980 160.900 1.092 28.060 0.019 -10.390 0.639 179.250 2.7 0.979 160.110 1.047 25.800 0.019 -9.250 0.647 178.880 2.8 0.976 158.800 1.006 23.550 0.018 -10.060 0.657 178.480 2.9 0.970 157.980 0.970 21.350 0.018 -10.510 0.666 178.050 3.0 0.971 156.720 0.932 19.290 0.018 -10.320 0.674 177.570 4.0 0.944 145.920 0.704 -1.870 0.018 -10.920 0.747 170.720 5.0 0.948 133.060 0.585 -24.040 0.019 -14.240 0.782 158.930 6.0 0.949 119.090 0.491 -46.540 0.016 -7.680 0.800 144.170 7.0 0.935 104.540 0.421 -68.180 0.020 -19.950 0.837 131.590 8.0 0.924 93.670 -100.370 -24.600 0.834 0.802 122.030 82.170 63.210 0.023 0.036 -31.840 0.908 0.864 0.385 0.396 -85.680 9.0 -121.250 0.065 -47.010 0.803 101.770 10.0 0.484 114.020 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. .