ASI MSC8004

MSC8004
HIGH POWER GaAs FET
FET PACKAGE TYPE 30
FEATURES INCLUDE:
•
High Output Power:
P1dB = 1.6 W (TYP) @ 12 GHz
•
High power gain:
GLP = 5 dB (TYP) @ 12 GHz
•
High power added efficiency:
Hadd = 18% (TYP) @ 12 GHz
APPLICATIONS:
•
S to Ku Band Power Amplifiers
TRANS1.SYM
ELECTRICAL SPECIFICATIONS
SYMBOL
O
TA = 25 C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
SATURATED DRAIN CURRENT
IDDS
VDS = 3.0 V
VGS = 0 V
850
1100
1400
mA
-2
-3
-5
V
GATE TO SOURCE CUT-OFF VOLTAGE
VGS (off)
VDS = 3.0 V
ID = 1.0 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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