MSC8004 HIGH POWER GaAs FET FET PACKAGE TYPE 30 FEATURES INCLUDE: • High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz • High power gain: GLP = 5 dB (TYP) @ 12 GHz • High power added efficiency: Hadd = 18% (TYP) @ 12 GHz APPLICATIONS: • S to Ku Band Power Amplifiers TRANS1.SYM ELECTRICAL SPECIFICATIONS SYMBOL O TA = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS SATURATED DRAIN CURRENT IDDS VDS = 3.0 V VGS = 0 V 850 1100 1400 mA -2 -3 -5 V GATE TO SOURCE CUT-OFF VOLTAGE VGS (off) VDS = 3.0 V ID = 1.0 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1