HW HWL34NC

HWL34NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
•
14.5 dB Typical Gain at 2.4 GHz
•
5V to 10V Operation
Outline Dimensions
1525.0
Description
1392.5
9
The HWL34NC is a power GaAs FET designed for
1235.0
1
1077.5
10
various L-band & S-band applications.
920.0
2
Absolute Maximum Ratings
762.5
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
447.5
IG
Gate Current
6mA
290.0
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
12W
5
6
11
605.0
3
7
12
4
8
132.5
13
PT
*
0.0
0.0
* mounted on an infinite heat sink
Electrical
Symbol
444.5
75.5
524.0
Units: µm
Thickness: 100 ±5
Chip size ±50
Bond
100 x 100
Specifications (TA=25°C) f = 2.4 GHz for all
RF Pads
Tests1-4 (Gate):
Bond Pads 5-8 (Drain):
100 x 100
Parameters & Conditions
Units
Bond PadsMin.
9-13(Source):
Typ.100 x 100Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
900
1200
1600
VP
Pinch-off Voltage at VDS=3V, ID=60mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=600mA
mS
-
700
-
dBm
33
34
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
dB
12.5
13.5
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
%
25
30
-
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL34NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
0.887
0.881
0.876
0.872
0.870
0.865
0.863
0.864
0.862
0.862
0.863
0.864
0.862
0.863
0.863
0.859
0.858
0.857
0.853
0.852
0.851
0.852
0.853
0.855
0.856
0.855
0.857
0.856
0.855
0.851
0.851
0.847
0.846
0.845
0.844
0.847
-111.36
-122.10
-130.68
-137.70
-143.48
-148.23
-152.62
-156.37
-159.54
-162.41
-165.14
-167.44
-169.77
-172.16
-174.21
-176.36
-178.17
-179.78
178.67
177.35
176.11
174.73
173.43
172.03
170.43
168.76
167.10
165.34
163.66
162.09
160.70
159.50
158.68
157.96
157.35
156.81
11.200
9.816
8.678
7.769
7.023
6.399
5.858
5.402
4.996
4.665
4.362
4.090
3.862
3.645
3.470
3.296
3.136
3.011
2.881
2.766
2.659
2.545
2.452
2.354
2.264
2.185
2.109
2.042
1.977
1.916
1.869
1.813
1.761
1.713
1.660
1.604
114.93
108.73
103.44
98.93
95.01
91.61
88.33
85.47
82.67
79.99
77.38
75.05
72.73
70.35
68.23
66.23
64.02
61.98
60.03
58.02
56.19
54.29
52.38
50.70
48.96
47.30
45.34
43.52
41.64
39.60
37.63
35.90
34.34
32.69
31.47
30.03
0.018
0.019
0.021
0.023
0.024
0.026
0.027
0.028
0.030
0.031
0.032
0.034
0.036
0.037
0.039
0.040
0.041
0.044
0.045
0.047
0.049
0.051
0.052
0.053
0.056
0.057
0.059
0.060
0.062
0.064
0.066
0.068
0.071
0.072
0.073
0.075
59.27
52.79
51.73
52.71
51.99
54.57
52.90
55.60
53.47
54.50
54.73
55.23
54.29
55.08
55.54
55.48
55.20
55.76
56.12
55.98
56.99
56.37
55.14
55.16
55.28
54.91
54.46
54.84
54.03
53.34
53.24
51.96
51.81
51.37
51.12
50.76
0.263
0.272
0.280
0.285
0.290
0.293
0.297
0.300
0.303
0.308
0.313
0.321
0.324
0.329
0.332
0.340
0.347
0.347
0.347
0.348
0.356
0.361
0.365
0.375
0.383
0.395
0.397
0.403
0.407
0.411
0.419
0.428
0.437
0.445
0.458
0.467
-158.55
-159.45
-161.03
-162.06
-162.88
-163.34
-164.20
-163.99
-165.14
-166.30
-167.97
-168.45
-168.88
-169.54
-169.87
-170.42
-170.89
-171.41
-172.09
-172.94
-173.65
-173.94
-175.88
-175.47
-175.35
-173.39
-174.42
-173.91
-175.37
-175.48
-177.03
-178.65
-179.72
179.17
178.27
177.78
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 1 wires on each pad
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.