HW HWF1686NC

HWF1686NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Features
Output Power: P1dB=30dBm(typ.)
High Gain: GL=15dB(typ.)
High Efficiency: PAE =45%(typ.)
High Linearity: IP3=45dBm(typ.)
Class A or Class AB Operation
Description
Outline Dimensions
650
μ
Unit :
m
Thickness: 100±5
All Bond Pads:
60 x 60
Designed for various RF and Microwave
applications,
the
HWF1686NC
is
S o u rce
435
1
3
215
2
4
a
medium power GaAs MESFET chip with 2
mm gate width and 0.7 µm gate length.
Absolute Maximum Ratings
S o u rce
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
2mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
3.5W
PT
*
0 .0
0 .0
5 8 .5
3 4 4 .5
400
Bond Pads:
1 to 2: Gate
3 to 4: Drain
* mounted on an infinite heat sink
Electrical Specifications (TA=25°C)
Symbol
Parameters
Conditions
Units
Min.
Typ.
Max.
mA
300
400
600
IDSS
Saturated Drain Current
VDS=3V, VGS=0V
VP
Pinch-off Voltage
VDS=3V, IDS=20mA
V
-3.5
-2.0
-1.5
gm
Transconductance
VDS=3V, IDS=200mA
mS
-
200
-
Rth
Thermal Resistance
Channel to Case
°C/W
-
32
45
P1dB
Output Power @1dB Gain
VDS=10V
dBm
29.0
30.0
-
GL
Linear Power Gain
dB
14
15
-
PAE
Power-added Efficiency (Pout = P1dB)
%
-
45
-
dBm
42
45
-
IP3
IDS=0.5IDSS
*
Third-order Intercept Point
f=2.4GHz
*: Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3
Bonding Manner
Gate, drain, pad: 1 wire on each pad
Source pad: 2 wires on each side
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWF1686NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Typical Performance (TA=25°C)
Output Power, Efficiency & Gain vs. Input Power
VDS=10V, IDS=0.5IDSS
f=2.4GHz
40
50
η
add
40
25
Pout
30
Gain (dB)
η
20
(%)
30
add
Pout (dBm)
35
Gain
15
20
10
10
5
0
0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
Power Derating Curve
Total Power Dissipation, PT (W)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
200
Case Temperature, TC (°C)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWF1686NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
S-Parameters (Common Source, TA=25°C, VDS=10V, IDS=0.5IDSS)
S11
Freq
S21
S12
(GHz)
Mag.
Ang.
Mag.
Ang.
Mag.
0.50
0.941
-35.52
7.298
155.47
0.014
0.60
0.955
-42.37
7.083
150.83
0.70
0.945
-48.22
6.908
0.80
0.939
-54.25
0.90
0.913
1.00
S22
Ang.
Mag.
Ang.
74.64
0.416
-13.56
0.016
73.22
0.404
-14.52
146.30
0.018
70.80
0.396
-16.79
6.721
142.13
0.020
69.27
0.389
-18.49
-60.70
6.531
138.16
0.022
66.98
0.387
-20.05
0.920
-66.26
6.341
134.51
0.024
63.86
0.376
-22.07
1.10
0.905
-71.82
6.141
130.91
0.026
62.94
0.370
-23.83
1.20
0.900
-77.43
5.965
127.35
0.027
62.28
0.361
-25.76
1.30
0.888
-82.61
5.761
124.14
0.029
60.29
0.358
-27.18
1.40
0.877
-86.99
5.583
121.03
0.030
60.06
0.355
-29.51
1.50
0.866
-91.52
5.400
117.94
0.031
58.28
0.352
-31.54
1.60
0.862
-96.16
5.244
115.05
0.032
57.45
0.352
-33.25
1.70
0.849
-100.26
5.070
112.09
0.033
56.50
0.350
-35.19
1.80
0.845
-104.19
4.908
109.37
0.034
55.46
0.346
-36.50
1.90
0.834
-107.89
4.748
106.76
0.035
55.43
0.348
-37.83
2.00
0.830
-111.59
4.594
104.16
0.036
55.14
0.343
-39.01
2.10
0.824
-115.06
4.446
101.56
0.037
54.06
0.340
-40.61
2.20
0.820
-118.38
4.310
99.28
0.037
53.76
0.337
-41.73
2.30
0.816
-121.59
4.181
96.97
0.038
53.87
0.333
-42.92
2.40
0.815
-124.82
4.062
94.75
0.039
52.98
0.331
-44.47
2.50
0.808
-127.70
3.932
92.72
0.039
53.73
0.326
-45.58
2.60
0.807
-130.55
3.829
90.59
0.040
52.77
0.323
-47.57
2.70
0.805
-133.31
3.723
88.48
0.040
52.95
0.319
-49.20
2.80
0.802
-135.83
3.626
86.57
0.041
53.74
0.319
-51.10
2.90
0.801
-138.38
3.530
84.55
0.041
53.39
0.319
-52.93
3.00
0.798
-141.06
3.436
82.53
0.041
53.50
0.320
-55.13
4.00
0.791
-161.20
2.695
65.37
0.048
56.87
0.321
-70.73
5.00
0.794
-176.63
2.190
50.35
0.056
60.93
0.346
-87.83
6.00
0.806
170.78
1.822
36.65
0.066
62.96
0.385
-104.02
7.00
0.821
160.59
1.544
24.20
0.078
63.40
0.433
-117.44
8.00
0.836
151.44
1.319
12.64
0.090
61.84
0.489
-128.90
9.00
0.848
143.35
1.138
1.99
0.103
59.45
0.540
-138.51
10.00
0.859
135.83
0.989
-7.97
0.116
55.95
0.585
-147.07
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.