HW HWF1686YC

HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Features
Output Power: P1dB=30dBm(typ.)
High Gain: GL=16dB(typ.)
High Efficiency: PAE=45%(typ.)
High Linearity: IP3=45dBm(typ.)
Description
Designed for various RF and Microwave
applications,
the
HWF1686YC
is
Outline Dimensions
650
μ
Unit :
m
Thickness: 53±5
All Bond Pads:
60 x 60
a
S o u rce
435
1
3
215
2
4
medium power GaAs MESFET chip with 2
mm gate width and 0.7 µm gate length.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
2mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
5.4W
PT
*
S o u rce
0 .0
0 .0
5 8 .5
3 4 4 .5
400
Bond Pads:
1 to 2: Gate
3 to 4: Drain
Source electrodes are connected
to the bottom of the chip by
via-holes
* mounted on an infinite heat sink
Electrical Specifications (TA=25°C)
Symbol
Parameters
Conditions
Units
Min.
Typ.
Max.
mA
300
400
600
IDSS
Saturated Drain Current
VDS=3V, VGS=0V
VP
Pinch-off Voltage
VDS=3V, IDS=20mA
V
-3.5
-2.0
-1.5
gm
Transconductance
VDS=3V, IDS=200mA
mS
-
200
-
Rth
Thermal Resistance
Channel to Case
°C/W
-
20
28
P1dB
Output Power @1dB Gain
VDS=10V
dBm
29.0
30.0
-
GL
Linear Power Gain
dB
15
16
-
PAE
Power-added Efficiency (Pout = P1dB)
%
-
45
-
IP3
Third-order Intercept Point
dBm
-
45
-
IDS=0.5IDSS
*
f=2.4GHz
*: Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3
Bonding Manner
Gate, drain, pad: 1 wire on each pad
Source pad: 2 wires on each side
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Typical Performance (TA=25°C)
Output Power, Efficiency & Gain vs. Input Power
VDS=10V, IDS=0.5IDSS
f=2.4GHz
40
50
η
add
40
25
30
Pout
Gain (dB)
η
20
(%)
30
add
Pout (dBm)
35
20
15
10
10
5
0
0
0
2
4
6
8
10
12
14
16
18
20
Power Derating Curve
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
200
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWF1686YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
S-Parameters (Common Source, TA=25°C, VDS=10V, IDS=0.5IDSS)
S11
Freq
S21
S12
(GHz)
Mag.
Ang.
Mag.
Ang.
Mag.
0.5
0.954
-34.67
7.226
155.21
0.014
0.6
0.951
-43.74
6.984
150.54
0.7
0.961
-49.94
6.840
0.8
0.948
-56.83
0.9
0.952
1.0
S22
Ang.
Mag.
Ang.
69.81
0.447
-19.70
0.017
67.23
0.437
-18.31
146.64
0.019
64.68
0.429
-21.07
6.627
142.25
0.021
61.63
0.419
-21.92
-62.89
6.439
138.64
0.022
58.12
0.413
-23.65
0.935
-68.75
6.249
134.81
0.024
56.88
0.410
-25.63
1.1
0.919
-74.49
6.062
130.93
0.026
53.94
0.402
-27.73
1.2
0.923
-79.55
5.877
127.63
0.027
51.75
0.396
-29.80
1.3
0.912
-84.11
5.683
124.29
0.028
49.51
0.392
-32.16
1.4
0.910
-88.83
5.500
121.14
0.029
47.65
0.386
-33.77
1.5
0.906
-93.24
5.323
118.15
0.030
45.96
0.384
-35.69
1.6
0.897
-97.51
5.155
115.23
0.032
44.48
0.382
-37.44
1.7
0.895
-101.56
4.985
112.39
0.032
42.75
0.376
-39.23
1.8
0.891
-105.51
4.828
109.72
0.033
40.58
0.372
-40.59
1.9
0.890
-109.19
4.675
107.11
0.033
39.47
0.369
-42.16
2.0
0.885
-112.59
4.527
104.59
0.034
38.99
0.368
-43.84
2.1
0.881
-115.71
4.377
102.10
0.034
37.41
0.363
-45.32
2.2
0.882
-119.35
4.247
99.79
0.035
36.06
0.363
-47.31
2.3
0.877
-122.09
4.127
97.46
0.035
35.40
0.361
-48.47
2.4
0.875
-124.98
4.004
95.30
0.035
34.21
0.359
-50.11
2.5
0.872
-127.84
3.884
93.16
0.035
33.53
0.356
-51.75
2.6
0.872
-130.32
3.770
91.12
0.036
32.95
0.354
-53.12
2.7
0.871
-132.93
3.667
88.97
0.036
32.08
0.354
-54.99
2.8
0.868
-135.21
3.563
87.05
0.036
31.42
0.352
-56.45
2.9
0.868
-137.65
3.468
85.04
0.036
30.69
0.354
-58.18
3.0
0.866
-139.91
3.376
83.18
0.036
30.10
0.351
-59.75
4.0
0.864
-158.30
2.637
65.91
0.035
28.12
0.360
-76.06
5.0
0.868
-171.82
2.131
50.92
0.034
29.66
0.387
-91.99
6.0
0.875
177.44
1.762
37.01
0.034
33.69
0.429
-106.97
7.0
0.885
168.64
1.482
24.35
0.035
37.70
0.479
-120.20
8.0
0.893
161.14
1.256
12.37
0.037
40.81
0.533
-131.61
9.0
0.900
154.58
1.076
1.23
0.039
41.73
0.587
-141.27
10.0
0.906
148.43
0.929
-9.39
0.042
40.54
0.632
-149.91
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.