HY62V8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Change the Notch Location of sTSOP - Left-Top => Left-Center 12 Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Dec.04.2000 Final 13 Changed Logo - HYUNDAI -> hynix - Marking Information Change Apr.30.2001 Final Sep.04.2000 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 13 / Apr. 2001 Hynix Semiconductor HY62V8100B Series FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL-part) -. 2.0V(min) data retention • Standard pin configuration -. 32 SOP - 525mil -. 32 TSOP-I - 8X20(Standard and Reversed) -. 32 sTSOP-I - 8X13.4 (Standard and Reversed) The HY62V8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62V8100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V. Product No. HY62V8100B HY62V8100B-E HY62V8100B-I Voltage (V) 3.0~3.6 3.0~3.6 3.0~3.6 Speed (ns) 70/85/100 70/85/100 70/85/100 Operation Current/Icc(mA) 5 5 5 Standby Current(uA) LL 10 15 15 Temperature (°C) 0~70 -25~85(E) -40~85(I) Note 1. Blank : Commercial, E : Extended, I : Industrial 2. Current value is max. PIN CONNECTION NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc A15 CS2 /WE A13 A8 A9 A11 /OE A10 /CS1 I/O8 I/O7 I/O6 I/O5 I/O4 SOP A11 A9 A8 A13 /WE CS2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 A11 A9 A8 A13 /WE CS2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4 TSOP-I (Standard) /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 BLOCK DIAGRAM A0 ROW DECODER WRITE DRIVER MEMORY ARRAY 128K x 8 I/O1 DATA I/O BUFFER SENSE AMP A16 COLUMN DECODER ADD INPUT BUFFER Pin Function Chip Select 1 Chip Select 2 Write Enable Output Enable Address Inputs Data Inputs / Outputs Power(3.0V~3.6V) Ground 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 sTSOP-I (Standard) PIN DESCRIPTION Pin Name /CS1 CS2 /WE /OE A0 ~ A16 I/O1 ~ I/O8 Vcc Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 I/O8 /CS1 /OE /WE Rev 13 / Apr. 2001 COLUMN DECODER CS2 2 HY62V8100B Series ORDERING INFORMATION Part No. HY62V8100BLLG HY62V8100BLLT1 HY62V8100BLLR1 HY62V8100BLLST HY62V8100BLLSR HY62V8100BLLG-E HY62V8100BLLT1-E HY62V8100BLLR1-E HY62V8100BLLST-E HY62V8100BLLSR-E HY62V8100BLLG-I HY62V8100BLLT1-I HY62V8100BLLR1-I HY62V8100BLLST-I HY62V8100BLLSR-I Speed 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 Power LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part Temp. E E E E E I I I I I Package SOP TSOP-I(Standard) TSOP-I(Reversed) smaller TSOP-I(Standard) smaller TSOP-I(Reversed) SOP TSOP-I(Standard) TSOP-I(Reversed) smaller TSOP-I(Standard) smaller TSOP-I(Reversed) SOP TSOP-I(Standard) TSOP-I(Reversed) smaller TSOP-I(Standard) smaller TSOP-I(Reversed) Note 1. Blank : Commercial, E : Extended, I : Industrial ABSOLUTE MAXIMUM RATING (1) Symbol Vcc, VIN, VOUT TA Parameter Power Supply, Input/Output Voltage Operating Temperature TSTG PD IOUT TSOLDER Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time Rating -0.3 to 4.6 0 to 70 -25 to 85 -40 to 85 -65 to 125 1.0 50 260 • 10 Unit V °C °C °C °C W mA °C•sec Remark HY62V8100B HY62V8100B-E HY62V8100B-I Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. TRUTH TABLE /CS1 H X L L L CS2 X L H H H /WE X X H H L /OE X X H L X Mode Deselected Deselected Output Disabled Read Write I/O High-Z High-Z High-Z Data Out Data In Power Standby Standby Active Active Active Note : 1. H=VIH, L=VIL, X=don't care( VIH or VIL ) Rev 13 / Apr. 2001 2 HY62V8100B Series RECOMMENDED DC OPERATING CONDITION Symbol Vcc Vss VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.2 -0.3(1) Typ. 3.3 0 - Max. 3.6 0 Vcc+0.3 0.6 Unit V V V V Note : 1. VIL = -1.5V for pulse width less than 30ns and not 100% tested DC ELECTRICAL CHARACTERISTICS Vcc = 3.0V~3.6V, TA = 0°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É (I), unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. ILI Input Leakage Current Vss < VIN < Vcc -1 1 ILO Output Leakage Current Vss <VOUT < Vcc, -1 1 /CS1 = VIH or CS2 = VIL or /OE = VIH or /WE = VIL Icc Operating Power Supply /CS1 = VIL, CS2 = VIH, 5 Current VIN = VIH or VIL, II/O = 0mA 35 ICC1 Average Operating Current /CS1 = VIL, CS2 = VIH, VIN = VIH or VIL Cycle Time = Min, 100% duty, IIO = 0mA ISB TTL Standby Current /CS1 = VIH or CS2 = VIL , 0.5 (TTL Input) VIN = VIH or VIL ISB1 Standby HY62V8100B /CS1 > Vcc - 0.2V or CS2 < 0.2V, 0.5 10 Current HY62V8100B-E VIN > Vcc - 0.2V or 0.5 15 (CMOS Input) HY62V8100B-I VIN < Vss + 0.2V 0.5 15 VOL Output Low Voltage IOL = 2.1mA 0.4 VOH Output High Voltage IOH = -1mA 2.2 - Unit uA uA mA mA mA uA uA uA V V Note : Typical values are at Vcc = 3.3V, TA = 25°C CAPACITANCE (Temp = 25°C, f= 1.0MHz) Symbol Parameter CIN Input Capacitance COUT Output Capacitance Condition VIN = 0V VI/O = 0V Max. 6 8 Unit pF pF Note : These parameters are sampled and not 100% tested Rev 13 / Apr. 2001 3 HY62V8100B Series AC CHARACTERISTICS Vcc = 3.0V~3.6V, TA = 0°C to 70°C / -25°C to 85°C (E) / -25¡ Éto 85¡ É (I), unless otherwise specified -70 -85 -10 # Symbol Parameter Min. Max. Min. Max. Min Max. READ CYCLE 1 tRC Read Cycle Time 70 85 100 2 tAA Address Access Time 70 85 100 3 tACS Chip Select Access Time 70 85 100 4 tOE Output Enable to Output Valid 40 45 50 5 tCLZ Chip Select to Output in Low Z 10 10 10 6 tOLZ Output Enable to Output in Low Z 5 5 5 7 tCHZ Chip Deselection to Output in High Z 0 30 0 30 0 30 8 tOHZ Out Disable to Output in High Z 0 30 0 30 0 30 9 tOH Output Hold from Address Change 10 10 15 WRITE CYCLE 10 tWC Write Cycle Time 70 85 100 11 tCW Chip Selection to End of Write 60 70 80 12 tAW Address Valid to End of Write 60 70 80 13 tAS Address Set-up Time 0 0 0 14 tWP Write Pulse Width 50 55 75 15 tWR Write Recovery Time 0 0 0 16 tWHZ Write to Output in High Z 0 25 0 30 0 35 17 tDW Data to Write Time Overlap 30 40 45 18 tDH Data Hold from Write Time 0 0 0 19 tOW Output Active from End of Write 5 5 10 - Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns AC TEST CONDITIONS TA = 0°C to 70°C / -25°C to 85°C (E) / -25¡ Éto 85¡ É (I), unless otherwise specified Parameter Value Input Pulse Level 0.4V to 2.2V Input Rise and Fall Time 5ns Input and Output Timing Reference Level 1.5V Output Load tCLZ,tOLZ,tCHZ,tOHZ,tWHZ CL = 5pF + 1TTL Load Others CL = 100pF + 1TTL Load AC TEST LOADS TTL CL(1) Note : 1 Including jig and scope capacitance Rev 13 / Apr. 2001 4 HY62V8100B Series TIMING DIAGRAM READ CYCLE 1(Note 1,4) tRC ADDR tAA tOH tACS /CS1 CS2 tCHZ(3) tOE /OE tOLZ(3) Data Out tOHZ(3) tCLZ(3) High-Z Data Valid READ CYCLE 2(Note 1,2,4) tRC ADDR tAA tOH tOH Data Out Previous Data Data Valid READ CYCLE 3(Note 1,2,4) /CS1 CS2 tACS tCLZ(3) Data Out tCHZ(3) Data Valid Notes: 1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1 and a high CS2. 2. /OE = VIL 3. Transition is measured + 200mV from steady state voltage. This parameter is sampled and not 100% tested. 4. /CS1 in high for the standby, low for active CS2 in low for the standby, high for active Rev 13 / Apr. 2001 5 HY62V8100B Series WRITE CYCLE 1(1,4,5,8) (/WE Controlled) tW C ADDR tW R (2) tCW /C S 1 CS2 tAW tW P /W E tAS Data In tDW High-Z tDH Data Valid tW H Z (3,7) tOW (5 ) (6 ) Data Out WRITE CYCLE 2 (Note 1,4,5,8) (/CS1, CS2 Controlled) tW C ADDR tCW tAS tW R (2) /CS1 tAW CS2 tW P /W E tDW Data In Data Out High-Z tDH Data Valid High-Z Notes: 1. A write occurs during the overlap of a low /WE, a low /CS1 and a high CS2. 2. tWR is measured from the earlier of /CS1 or /WE going high or CS2 going low to the end of write cycle. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be applied. 4. If the the /CS1 low transition and CS2 high transition occur simultaneously with the /WE low transition or after the /WE transition, outputs remain in a high impedance state. 5. Q(data out) is the same phase with the write data of this write cycle. 6. Q(data out) is the read data of the next address. 7. Transition is measured +200mV from steady state. This parameter is sampled and not 100% tested. 8. /CS1 in high for the standby, low for active CS2 in low for the standby, high for active Rev 13 / Apr. 2001 6 HY62V8100B Series DATA RETENTION ELECTRIC CHARACTERISTIC TA=0°C to 70°C / -25°C to 85°C (E) / -25¡ Éto 85¡ É (I) Sym Parameter Test Condition VDR Vcc for Data Retention /CS1>Vcc-0.2V or CS2<0.2V, VIN > Vcc-0.2V or VIN < Vss+0.2V ICCDR Data HY62V8100B Vcc=3.0V, Retention HY62V8100B-E /CS1>Vcc - 0.2V or CS2<0.2V, Current HY62V8100B-I VIN > Vcc-0.2V or VIN > Vss+0.2V tCDR Chip Deselect to Data See Data Retention Timing Retention Time Diagram tR Operating Recovery Time Min 2.0 Typ - Max - Unit V 0 0.5 0.5 0.5 - 10 15 15 - uA uA uA ns tRC(2) - - ns Notes: 1. Typical values are under the condition of TA = 25°C. 2. tRC is read cycle time. DATA RETENTION TIMING DIAGRAM 1 DATA RETENTION MODE VCC 3.0V tCDR tR 2.2V VDR CS1>VCC-0.2V CS1 VSS DATA RETENTION TIMING DIAGRAM 2 DATA RETENTION MODE VCC 3.0V tCDR tR CS2 VDR 0.4V VSS Rev 13 / Apr. 2001 CS2<0.2V 7 HY62V8100B Series PACKAGE INFORMATION 32pin 525mil Small Outline Package(G) UNIT : INCH(mm) 0.810(20.574) 0.804(20.422) 0.444(11.278) 0.438(11.125) 0.564(14.326) 0.546(13.868) 0.109(2.769) 0.099(2.515) 0.011(0.279) 0.004(0.102) 0.050(1.27)BSC Rev 13 / Apr. 2001 0.0125(0.318) 0.0061(0.155) 0.020(0.508) 0 deg 0.0425(1.080) 0.014(0.356) 8 deg 0.0235(0.597) 8 HY62V8100B Series 32pin 8x20mm Thin Small Outline Package Standard(T1) #1 #32 UNIT : INCH(mm) 0.319(8.103) 0.311(7.900) #17 #16 0.728(18.491) 0.720(18.288) 0.792(20.117) 0.784(19.914) 0.041(1.05) 0.037(0.95) 0.006(0.15) 0.002(0.05) 0.008(0.21) 0.004(0.10) 0.025(0.64) 0.021(0.54) 0.020(0.50) BSC 0.011(0.27) 0.007(0.17) 32pin 8x20mm Thin Small Outline Package Reversed(R1) #16 #17 UNIT : INCH(mm) 0.319(8.103) 0.311(7.900) #32 #1 0.728(18.491) 0.720(18.288) 0.792(20.117) 0.784(19.914) 0.041(1.05) 0.037(0.95) 0.006(0.15) 0.002(0.05) 0.025(0.64) 0.021(0.54) Rev 13 / Apr. 2001 0.008(0.21) 0.004(0.1) 0.020(0.50) BSC 0.011(0.27) 0.007(0.17) 9 HY62V8100B Series 32pin 8x13.4mm Samller Thin Small Outline Package Standard(ST) #1 #32 UNIT : INCH(mm) 0.319(8.1) 0.311(7.9) #17 #16 0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2) 0.041(1.05) 0.037(0.95) 0.008(0.20) 0.002(0.05) 0.008(0.2) 0.004(0.1) 0.024(0.6) 0.016(0.4) 0.020(0.50) 0.011(0.27) 0.007(0.17) 32pin 8x13.4mm Smaller Thin Small Outline Package Reversed(SR) #16 #17 UNIT : INCH(mm) 0.319(8.1) 0.311(7.9) #32 #1 0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2) 0.041(1.05) 0.037(0.95) 0.008(0.20) 0.002(0.05) 0.024(0.6) 0.016(0.4) Rev 13 / Apr. 2001 0.008(0.2) 0.004(0.1) 0.020(0.50) 0.011(0.27) 0.007(0.17) 10 HY62V8100B Series MARKING INFORMATION Package SOP TSOP-I sTSOP Marking Example h y n i x H Y 6 2 V y y w w p h y n i x H Y 6 2 V y y w w p H Y 6 2 V 8 c c S T - s y y w w p 8 8 1 1 0 0 B c c 0 0 B c c T 1 0 0 B s t O R K K O R E A G - s s t K O R E A 1 - s s t Index • hynix • KOREA / KOR • HY62V8100B • yy • ww •p • cc • G / T1 / ST • ss •t Note - Capital Letter - Small Letter Rev 13 / Apr. 2001 : hynix Logo : Origin Country : Part Name : Year ( ex : 00 = year 2000, 01 = year 2001 ) : Work Week ( ex : 12 = ww12 ) : Process Code : Power Consumption -L : Low Power - LL : Low Low Power : Package Type -G : SOP - T1 : TSOP-I - ST : sTSOP : Speed - 70 : 70ns - 85 : 85ns : Temperature - Blank : Commercial ( 0 ~ 70 °C ) -E : Extended ( -25 ~ 85 °C ) -I : Industrial ( -40 ~ 85 °C ) : Fixed Item : Non-fixed Item (Except hynix) 11