AL422 Data Sheets (Revision V1.1) AL422 Amendments (Since April 2, 1999) 05-13-99 DC/AC characteristics (including current consumption) updated. 07-02-99 Pinout diagram (5.0) and DC external load (7.4) modified. 08-03-99 Description about TST pin added in sections 6.0 & 8.1. 09-02-99 8.3.2 rewritten. 10-26-99 Capacitance provided in the AC characteristics section. 12-15-99 Remove TST pin restriction. 01-18-01 1. Revised section “8.3.2 Read Enable during Reset Cycles” to “8.3.2 The Proper Manipulation of FIFO Access”. 2. Add section “8.3.3 Single Field Write with Multiple Read Operation” 3. Add section “8.3.4 One Field Delay Line (The Old Data Read)” AL422B January 23, 2001 2 AL422 AL422 3M-Bits FIFO Field Memory Contents: 1.0 Description ________________________________________________________________ 4 2.0 Features___________________________________________________________________ 4 3.0 Applications________________________________________________________________ 4 4.0 Ordering Information ________________________________________________________ 4 5.0 Pinout Diagram ____________________________________________________________ 5 6.0 Pin Description _____________________________________________________________ 5 7.0 Electrical Characteristics _____________________________________________________ 6 7.1 Absolute Maximum Ratings ________________________________________________________ 6 7.2 Recommended Operating Conditions ________________________________________________ 6 7.3 DC Characteristics _______________________________________________________________ 6 7.4 AC Characteristics _______________________________________________________________ 7 7.5 Timing Diagrams_________________________________________________________________ 9 8.0 Functional Description______________________________________________________ 13 8.1 Memory Operation ______________________________________________________________ 14 8.2 5V and 3.3V applications _________________________________________________________ 15 8.3 Application Notes _______________________________________________________________ 16 8.3.1 Irregular Read/Write _________________________________________________________________ 16 8.3.2 The Proper Manipulation of FIFO Access _________________________________________________ 17 8.3.3 Single Field Write with Multiple Read Operation___________________________________________ 17 8.3.4 One Field Delay Line (The Old Data Read) _______________________________________________ 17 9.0 Mechanical Drawing _______________________________________________________ 19 AL422B January 23, 2001 3 AL422 1.0 Description The AL422 consists of 3M-bits of DRAM, and is configured as 393,216 words x 8 bit FIFO (first in first out). The interface is very user-friendly since all complicated DRAM operations are already managed by the internal DRAM controller. Current sources of similar memory (field memory) in the market provide limited memory size which is only enough for holding one TV field, but not enough to hold a whole PC video frame which normally contains 640x480 or 720x480 bytes. The AverLogic AL422 provides 50% more memory to support high resolution for digital PC graphics or video applications. The 50% increase in speed also expands the range of applications. 2.0 Features 3.0 Applications • • • • • • • • • • • • • • • • • • • 384K (393,216) x 8 bits FIFO organization Support VGA, CCIR, NTSC, PAL and HDTV resolutions Independent read/write operations (different I/O data rates acceptable) High speed asynchronous serial access Read/write cycle time: 20ns Access time: 15ns Output enable control (data skipping) Self refresh 5V or 3.3V power supply Standard 28-pin SOP package Multimedia systems Video capture systems Video editing systems Scan rate converters TV’s picture in picture feature Time base correction (TBC) Frame synchronizer Digital video camera Buffer for communications systems 4.0 Ordering Information AL422B Part number Package Power Supply Status AL422B 28-pin plastic SOP +5/+3.3 volt Shipping AL422V5 28-pin plastic SOP +5 volt Replaced by AL422B AL422V3 28-pin plastic SOP +3.3 volt Replaced by AL422B January 23, 2001 4 AL422 5.0 Pinout Diagram DO0 DO1 DO2 DO3 28 27 26 25 /RE GND /OE /RRST RCK DEC DO4 DO5 DO6 DO7 24 23 22 21 20 19 18 17 16 15 AVERLOGIC AL422B XXXXX XXXX 1 2 3 4 DI0 DI1 DI2 DI3 5 6 7 8 9 10 /WE GND TST /WRST WCK VDD Lot Number Date Code 11 12 13 14 DI4 DI5 DI6 DI7 AL422-04 422B pinout diagram 6.0 Pin Description AL422B Pin name Pin # I/O type Function DI0~DI7 1~4, 11~14 input Data input WCK 9 Input Write clock /WE 5 Input (active low) Write enable /WRST 8 Input (active low) Write reset DO0~DO7 15~18, 25~28 Output (tristate) Data output RCK 20 Input Read clock /RE 24 Input (active low) Read enable /RRST 21 Input (active low) Read reset /OE 22 Input (active low) Output enable TST 7 Input Test pin (pulled-down)* VDD 10 5V or 3.3V DEC/VDD 19 Decoupling cap input GND 6, 23 Ground January 23, 2001 5 AL422 7.0 Electrical Characteristics 7.1 Absolute Maximum Ratings Ratings Parameter Unit 3.3V application 5V application VDD Supply Voltage -1.0 ~ +4.5 -1.0 ~ +7.0 V VP Pin Voltage -1.0 ~ +5.5 -1.0 ~ VDD +0.5 V IO Output Current -20 ~ +20 -20 ~ +20 mA TAMB Ambient Op. Temperature 0 ~ +70 0 ~ +70 °C Tstg Storage temperature -55 ~ +125 -55 ~ +125 °C 7.2 Recommended Operating Conditions 3.3V application Parameter 5V application Unit Min Max Min Max VDD Supply Voltage +3.0 +3.6 +4.5 +5.25 V VIH High Level Input Voltage +2.0 +5.5 +3.0 VDD +0.5 V VIL Low Level Input Voltage -1.0 +0.8 -1.0 +0.8 V 7.3 DC Characteristics (VDD =5V or 3.3V, Vss=0V. TAMB = 0 to 70°C) 3.3V application Parameter 5V application Unit Min Typ Max Min Typ Max IDD Operating Current @20MHz - 33 - - 50 - mA IDD Operating Current @30MHz - 45 - - 66 - mA IDD Operating Current @40MHz - 57 - - 82 - mA IDD Operating Current @50MHz - 68 - - 97 - mA IDDS Standby Current - 7 - - 12 - mA VOH Hi-level Output Voltage 0.7VDD - VDD +3.0 - VDD V VOL Lo-level Output Voltage - - +0.4 - - +0.4 V ILI Input Leakage Current -10 - +10 -10 - +10 µA ILO Output Leakage Current -10 - +10 -10 - +10 µA AL422B January 23, 2001 6 AL422 7.4 AC Characteristics (VDD =5V or 3.3V, Vss=0V, TAMB = 0 to 70°C) Parameter AL422B 3.3V application 5V application Min Max Min Max Unit TWC WCK Cycle Time 20 1000 20 1000 ns TWPH WCK High Pulse Width 7 - 7 - ns TWPL WCK Low Pulse Width 7 - 7 - ns TRC RCK Cycle Time 20 1000 20 1000 ns TRPH RCK High Pulse Width 7 - 7 - ns TRPL RCK Low Pulse Width 7 - 7 - ns TAC Access Time - 15 - 15 ns TOH Output Hold Time 4 - 4 - ns THZ Output High-Z Setup Time 3 15 4 15 ns TLZ Output Low-Z Setup Time 3 15 4 15 ns TWRS /WRST Setup Time 5 - 6 - ns TWRH /WRST Hold Time 2 - 3 - ns TRRS /RRST Setup Time 5 - 6 - ns TRRH /RRST Hold Time 2 - 3 - ns TDS Input Data Setup Time 5 - 6 - ns TDH Input Data Hold Time 2 - 3 - ns TWES /WE Setup Time 5 - 6 - ns TWEH /WE Hold Time 2 - 3 - ns TWPW /WE Pulse Width 10 - 10 - ns TRES /RE Setup Time 5 - 6 - ns TREH /RE Hold Time 2 - 3 - ns TRPW /RE Pulse Width 10 - 10 - ns TOES /OE Setup Time 5 - 6 - ns TOEH /OE Hold Time 2 - 3 - ns TOPW /OE Pulse Width 10 - 10 - ns TTR Transition Time 2 20 3 20 ns CI Input Capacitance - 7 - 7 pF CO Output Capacitance - 7 - 7 pF January 23, 2001 7 AL422 • • Input voltage levels are defined as VIH=3.0V and VIL=0.4V. The read address needs to be at least 128 cycles after the write address. DO external load: AL422B January 23, 2001 8 AL422 7.5 Timing Diagrams Reset cycle (s) cycle n cycle 0 cycle 1 WCK TTR TWRS TWRH /WRST TDS DI7~0 n-1 n TDH 0 1 /WE = "L" AL422-05 Write Cycle Timing (Write Reset) Reset cycle (s) cycle n cycle 0 cycle 1 TRPL RCK TRPH TRRS TRRH /RRST TAC TOH DO7~0 n-1 n 0 0 1 /RE = /OE = "L" AL422-07 Read Cycle Timing (Read Reset) AL422B January 23, 2001 9 AL422 cycle n cycle n+1 Disable cycle (s) cycle n+2 TRPL RCK TRPH TRC TRES TREH /RE TRPW TAC TOH DO7~0 n-1 n n+1 n+2 /OE = "L" AL422-08 Read Cycle Timing (Read Enable) cycle n cycle n+1 cycle n+2 cycle n+3 cycle n+4 TRPL RCK TRPH TRC TOES TOEH /OE TOPW TAC TOH DO7~0 n-1 n THZ n+1 TLZ Hi-Z n+4 /RE = "L" AL422-09 Read Cycle Timing (Output Enable) AL422B January 23, 2001 10 AL422 cycle n cycle n+1 Disable cycle (s) cycle n+2 TWPL WCK TWPH TWC TWES TWEH /WE TWPW TDS DI7~0 n-1 TDH n n+1 n+2 AL422-06 Write Cycle Timing (Write Enable) cycle n cycle n+1 Disable cycle (s) cycle 0 TRPL RCK TRPH TRC TRRS TRRH /RRST TRES TREH /RE TRPW TAC TOH DO7~0 n-1 n n+1 0 /OE = "L" AL422-14 Read Cycle Timing (RE, RRST) AL422B January 23, 2001 11 AL422 cycle n cycle n+1 Disable cycle (s) cycle 0 cycle 1 TWPL WCK TWPH TWC TWRS TWRH /WRST TWES TWEH /WE TWPW TDS DI7~0 n-1 TDH n n+1 0 1 AL422-15 Write Cycle Timing (WE, WRST) AL422B January 23, 2001 12 AL422 8.0 Functional Description The AL422 is a video frame buffer consisting of DRAM that works like a FIFO which is long enough to hold up to 819x480 bytes of picture information and fast enough to operate at 50MHz. The functional block diagram is as follows: SRAM Cache DI7~ DI0 Input Buffer Write Data Register 384k x8 Memory Cell Array Read Data Register Output Buffer DO7~ DO0 /OE WCK /WRST /WE Write Address Counter Timing Generator & Arbiter Refresh Address Counter Read Address Counter RCK /RRST /RE AL422-03 Block Diagram The I/O pinouts and functions are described as follows: DI7~DI0 Data Input: Data is input on the rising edge of the cycle of WCK when /WE is pulled low (enabled). DO7~DO0 Data Output: Data output is synchronized with the RCK clock. Data is obtained at the rising edge of the RCK clock when /RE is pulled low. The access time is defined from the rising edge of the RCK cycle. WCK Write Clock Input: The write data input is synchronized with this clock. Write data is input at the rising edge of the WCK cycle when /WE is pulled low (enabled). The internal write address pointer is incremented automatically with this clock input. RCK Read Clock Input: The read data output is synchronized with this clock. Read data output at the rising edge of the RCK cycle when /OE is pulled low (enabled). The internal read address pointer is incremented with this clock input. /WE Write Enable Input: /WE controls the enabling/disabling of the data input. When /WE is pulled low, input data is acquired at the rising edge of the WCK cycle. When /WE is pulled high, the AL422B January 23, 2001 13 AL422 memory does not accept data input. The write address pointer is stopped at the current position. /WE signal is fetched at the rising edge of the WCK cycle. /RE Read Enable Input: /RE controls the operation of the data output. When /RE is pulled low, output data is provided at the rising edge of the RCK cycle and the internal read address is incremented automatically. /RE signal is fetched at the rising edge of the RCK cycle. /OE Output Enable Input: /OE controls the enabling/disabling of the data output. When /OE is pulled low, output data is provided at the rising edge of the RCK cycle. When /OE is pulled high, data output is disabled and the output pins remain at high impedance status. /OE signal is fetched at the rising edge of RCK cycle. /WRST Write Reset Input: This reset signal initializes the write address to 0, and is fetched at the rising edge of the WCK input cycle. /RRST Write Reset Input: This reset signal initializes the read address to 0, and is fetched at the rising edge of the RCK input cycle. TST Test Pin: For testing purpose only. It should be pulled low for normal applications. DEC: Decoupling cap pin, should be connected to a 1µF or 2.2µF capacitor to ground for 5V application. For 3.3V application, the DEC pin can be simply connected to the 3.3V power with regular 0.1µF bypass capacitor. 8.1 Memory Operation Initialization Apply /WRST and /RRST 0.1ms after power on, then follow the following instructions for normal operation. Reset Operation The reset signal can be given at any time regardless of the /WE, /RE and /OE status, however, they still need to meet the setup time and hold time requirements with reference to the clock input. When the reset signal is provided during disabled cycles, the reset operation is not executed until cycles are enabled again. When /WRST signal is pulled low, the data input address will be set to 0 and the data in the Input Buffer will be flushed into memory cell array. When /RRST signal is pulled low, the data output address will be set to 0 and pre-fetch the data from memory cell array to Output Buffer. AL422B January 23, 2001 14 AL422 Write Operation Data input DI7~DI0 is written into the write register at the WCK input when /WE is pulled low. The write data should meet the setup time and hold time requirements with reference to the WCK input cycle. Write operation is prohibited when /WE is pulled high, and the write address pointer is stopped at the current position. The write address starts from there when the /WE is pulled low again. The /WE signal needs to meet the setup time and hold time requirements with reference to the WCK input cycle. Read Operation Data output DO7~DO0 is written into the read register at the RCK input when both /RE and /OE are pulled low. The output data is ready after TAC (access time) from the rising edge of the RCK input cycle. The read address pointer is stopped at the current position when /RE is pulled high, and starts there when /RE is pulled low again. /OE needs to be pulled low for read operations. When /OE is pulled high, the data outputs will be at high impedance stage. The read address pointer still increases synchronously with RCK regardless of the /OE status. The /RE and /OE signals need to meet the setup time and hold time requirements with reference to the RCK input cycle. When the new data is read, the read address should be between 128 to 393,247 cycles after the write address, otherwise the output may not be new data. 8.2 5V and 3.3V applications The AL422 can accept either 3.3V or 5V power with slightly different external configuration. The internal voltage regulator can convert 5V power to 3.3V for the embedded DRAM and logic circuitry when 5V power is applied to VDD pin (#10) only and leave the DEC pin (#19) decoupled by a capacitor of 1µF or 2.2µF to ground. The regulator can also be bypassed when 3.3V power is applied to both VDD and DEC pins. In either case the AL422 is 5V or 3.3V I/O tolerant. The 3.3V configuration consumes less power and is free from noise interference from the voltage regulator so may be more ideal for high-speed applications. Please note that using the AL422B with 5V configuration can directly replace the previous AL422V5; using it with 3.3V configuration can directly replace the previous AL422V3. No additional modification is required. AL422B January 23, 2001 15 AL422 The 5V configuration (direct replacement of the previous AL422V5) is as follows: 5V AL422B VDD DEC 0.1uF 2.2uF The 3.3V configuration (direct replacement of the previous AL422V3) is as follows: 3.3V 3.3V AL422B 10 VDD DEC 19 0.1uF 0.1uF 8.3 Application Notes 8.3.1 Irregular Read/Write It is recommended that the WCK and RCK are kept running at least 1MHz at all times. The faster one of WCK and RCK is used as the DRAM refresh timing clock and has to be kept free running. When irregular FIFO I/O control is needed, keep the clock free running and use /WE or /RE to control the I/O as follows: WCK Data /WE AL422-17 Slow Write - Correct The following drawing shows irregular clock and should be avoided: AL422B January 23, 2001 16 AL422 WCK Data /WE AL422-16 Slow Write - Incorrect 8.3.2 The Proper Manipulation of FIFO Access The FIFO memory is designed to allow easy field delay, time-base conversion, and other types of signal processing. To ensure the expectant data can be read out from the AL422 FIFO, the proper manipulation on the AL422 FIFO memory is highly recommended 1. The read address should be between 128 to 393,247 cycles after the write address to read the current field data. (The restriction is indicated in the “Read Operation” Section). 2. The proper FIFO access must make sure after read reset, the read operation will either read all the old data (last field data) until next read reset, or follow the constraint 1 above to read newly update data. In any 2 read resets interval, the FIFO access can not read old data (the field data are written before last write reset), and stop for a period then read the newly update data (even at that time, write counter is ahead of read counter by more than 128 cycles). If the FIFO memory manipulations violate the above conditions, some amount of consecutive unexpected data (old data) will be read at the FIFO data bus. 8.3.3 Single Field Write with Multiple Read Operation It is one of the functions for FIFO memory that can buffer a field data and do multiple times of fields read access. In some applications, such as still image capturing, require one field write and multiple field data read operations. In order not to violate the 128 cycles of write to read delay latency rule, the write address (pointer) needs to be reset to 0 for the coming multiple read operations so that FIFO can provide the expectant data at DO bus. 8.3.4 One Field Delay Line (The Old Data Read) As the design shown in diagram by applying the reset every 1-field cycle (with the common signal for /WRST and /RRST) and a constant read/write operation (with all /WE, /RE and /OE are tied to ground), “1 field delay line” timing is shown in timing chart below. When the difference between the AL422B January 23, 2001 17 AL422 write address and the read address is 0 (the read address and the write address are the same), the old field data are read as shown in the timing chart. Reset AL422 /WRST 8-bit Input DI[7:0] /RRST DO[7:0] 8-bit Output /OE /RE /WE WCK RCK Clock AL422 1 Field Delay Line Diagram Field m cycle 0 cycle 1 Field m + 1 cycle n cycle 0 cycle 1 RCK WCK /RRST /WRST DI7~0 0 1 n 0 1 tAC DO7~0 0 1 Data of field m AL422-08 1 Field Delay Line Timing Diagram AL422B January 23, 2001 18 AL422 9.0 Mechanical Drawing 28 PIN PLASTIC SOP: AL422B January 23, 2001 19 CONTACT INFORMATION AverLogic Technologies, Inc. 6840 Via Del Oro Suite 160 San Jose, CA 95119 USA Tel Fax E-mail URL : 1 408 361-0400 : 1 408 361-0404 : [email protected] : www.averlogic.com