CHENMKO ENTERPRISE CO.,LTD CHTA42LPT SURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-59/SOT-346 * Surface mount package. (SC-59/SOT-346) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA) * Low cob. Cob=3.0pF(Typ.) * PD= 300mW (mounted on ceramic substrate). * High saturation current capability. (3) (2) 0.95 (1) 0.95 1.9±0.2 2.9±0.2 CONSTRUCTION 0.1 0.4±0.05 * NPN Silicon Transistor * Epitaxial planner type 1.6± 0.2 0.1 MARKING * NB 0.2 1.1± 0.1 0.15± 0.1 0.06 0.8±0.1 0~0.1 0.3~0.6 C (3) CIRCUIT 2.8±0.2 (1) B E(2) Dimensions in inches and (millimeters) SC-59/SOT-346 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 300 Volts Collector - Emitter Voltage Open Base VCEO - 300 Volts Emitter - Base Voltage Open Collector VEBO - 6.0 Volts IC - 500 mAmps Peak Collector Current ICM - 500 mAmps Peak Base Current IBM - 15 mAmps PTOT - 300 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-11 RATING CHARACTERISTICS ( CHTA42LPT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=200V ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=6.0V ICEO - - 0.1 uA DC Current Gain VCE=10V; Note 1 IC=1.0mA IC=10mA IC=30mA hFE 25 40 40 - - Collector-Emitter Saturation Voltage IC=20mA; IB=2mA VCE(sat) - - 0.5 Volts Base-Emitter Saturatio Voltage IC=20mA; IB=2mA VBE(sat) - - 0.9 Volts Output Collector Capacitance IE=ie=0; VCB=20V; f=1MHz Cob - - 3.0 pF Transition Frequency IC=10mA; VCE=20V; f=100MHz fT 50 - - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. CONDITION RATING CHARACTERISTIC CURVES ( CHTA42LPT ) Figure 1. DC Current Gain 120 hFE, DC CURRENT GAIN VCE=10Vdc TJ = +125OC 100 80 25OC 60 40 -55OC 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. Capacitance Figure 3. Current-Gain - Bandwidth fT, CURRENT GAIN - BANDWIDT (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 Ccb @ 1MHz 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 80 70 60 50 40 30 20 10 1.0 TJ = 25OC VCE = 20 V f = 20 MHz 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 4. "ON" Voltages 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat)@25OC,IC/IB=10 VCE(sat)@125OC,IC/IB=10 VCE(sat)@-55OC,IC/IB=10 VBE(sat)@25OC,IC/IB=10 1.0 0.8 VBE(sat)@125OC,IC/IB=10 0.6 VBE(sat)@-55OC,IC/IB=10 VBE(on)@25OC,VCE=10V VBE(on)@125OC,VCE=10V VBE(on)@-55OC,VCE=10V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100