CHENMKO ENTERPRISE CO.,LTD 2SA1037MPT SURFACE MOUNT General Purpose PNP Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Power Amplifier . FEATURE * Small surface mounting type. (SOT-723) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA) * Low cob. Cob=4.0pF(Typ.) SOT-723 * PC= 150mW (Collector power dissipation). CONSTRUCTION (3) * PNP Silicon Transistor * Epitaxial planner type (2) 0.17~0.27 0.4 1.15~1.25 0.4 0.75~0.85 0.27~0.37 (1) 0.17~0.27 0.75~0.85 MARKING * HFE(Q):38 * HFE(R):39 * HFE(S):40 0.45~0.55 0.11~0.14 C (3) CIRCUIT 1.15~1.25 (1) B E (2) SOT-723 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -60 Volts Collector - Emitter Voltage Open Base VCEO - -50 Volts Emitter - Base Voltage Open Collector VEBO - -6 Volts IC - -150 mAmps PTOT - 150 mW Storage Temperature TSTG -55 +150 o C Junction Temperature TJ - +150 o C Collector Current DC Collector Power Dissipation TA ≤ 25OC Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-06 RATING CHARACTERISTICS ( 2SA1037MPT) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS VCB=-60V CONDITION ICBO - - -0.1 uA Emitter Cut-off Current VEB=-6V IEBO - - -0.1 uA DC Current Gain VCE=-6V; Note 1 IC=-1mA; Note 2 hFE 120 - 560 Collector-Emitter Saturation Voltage IC=-50mA; IB=-5mA VCEsat - - -0.5 Volts Collector-Emitter Breakdown Voltage IC=-1mA VCEO -50 - - Volts Output Collector Capacitance IE=ie=0; VCB=-12V; f=1MHz Cob - 4.0 5.0 pF Transition Frequency IE=2mA; VCE=-12V; f=30MHz fT - 140 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560 RATING CHARACTERISTIC CURVES ( 2SA1037MPT) −10 Ta=100˚C 25˚C −40˚C −5 −2 −1 −0.5 −0.2 −0.1 −10 VCE=−6V −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Grounded emitter output characteristics (1) −35.0 Ta=25˚C −31.5 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.3 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 −20 Fig.2 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (mA) Fig.1 −80 −60 Grounded emitter output characteristics (2) Ta=25˚C −500 −450 −400 −350 −300 −250 −200 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) RATING CHARACTERISTIC CURVES ( 2SA1037MPT) 500 lC/lB=10 Ta=100˚C 25˚C −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C −40˚C 200 100 50 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) −0.2 −0.5 −1 −2 VCE=−6V −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig. 6 Gain bandwidth product vs. emitter current 1000 TRANSITION FREQUENCY : fT (MHz) −1 Fig.5 DC current gain vs. collector current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.4 Collector-emitter saturation voltage vs. collector current Ta=25˚C VCE=−12V 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE (mA) 50 100