CHENMKO ENTERPRISE CO.,LTD CHUMT1PT SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SC-88/SOT-363) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.) SC-88/SOT-363 * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. (1) (6) * Two the 2SA1037K in one package. 0.65 1.2~1.4 * PNP Silicon Transistor 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 1 3 2.15~2.45 SC-88/SOT-363 Dimensions in millimeters 2SA1037K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -60 Volts Collector - Emitter Voltage Open Base VCEO - -50 Volts Emitter - Base Voltage Open Collector VEBO - -6 Volts IC - -150 mAmps Peak Collector Current ICM - -150 mAmps Peak Base Current IBM - -15 mAmps PTOT - 150 mW Storage Temperature TSTG -55 +150 o C Junction Temperature TJ - +150 o C +150 o C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Operating Ambient Temperature Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. TAMB -55 RATING CHARACTERISTIC CURVES ( CHUMT1PT ) 2SA1037K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. Collector-base breakdown voltage PARAMETERS IC=-50uA CONDITION BVCBO -60 Collector-emitter breakdown voltage IC=-1mA BVCEO -50 Emitter-base breakdown voltage IE=-50uA BVEBO Collector Cut-off Current IE=0; VCB=-60V Emitter Cut-off Current TYPE MAX. UNITS - Volts - - Volts -6 - - Volts ICBO - - -0.1 IC=0; VEB=-6V IEBO - - -0.1 DC Current Gain VCE=-6V IC=-1mA hFE 120 - 560 Collector-Emitter Saturation Voltage IC=-50mA; IB=-5mA VCEsat - - -0.5 Volts Output Collector Capacitance IE=ie=0; VCB=-12V; f=1MHz Cob - 4 5.0 pF Transition Frequency IE=2mA; VCE=-12V; f=100MHz fT - 140 - MHz - uA RATING CHARACTERISTIC CURVES ( CHUMT1PT ) 2SA1037K Typical Electrical Characteristics −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 -1.8 −24.5 DC CURRENT GAIN : hFE −40˚C 100 50 −50 −100 COLLECTOR CURRENT : IC (mA) −17.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE (mA) −14.0 −4 −10.5 −7.0 −2 −0.4 −0.8 −1.2 −1.6 50 −1 IB=0 −2.0 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 100 VCE=−5V −3V −1V Ta=25˚C 200 100 50 −3.5µA COLLECTOR CURRENT : IC (mA) Fig.7 Gain bandwidth product vs. emitter current 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−6V −5 −10 −20 −21.0 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig. 5 Collector-emitter saturation voltage vs. collector current 25˚C −2 −28.0 BASE TO EMITTER VOLTAGE : VBE (V) 500 −0.2 −0.5 −1 500 −31.5 −6 0 Fig.4 DC current gain vs. collector current (2) 200 −35.0 Ta=25˚C −8 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100˚C Fig.3 DC current gain vs. collector current (1) Grounded emitter output characteristics DC CURRENT GAIN : hFE −10 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −50 −20 Fig.2 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 −50 −100 −1 lC/lB=10 −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA)