CHENMKO ENTERPRISE CO.,LTD CHT5564XPT SURFACE MOUNT NPN Epitaxial Transistor VOLTAGE 15 Volts CURRENT 6 Amperes APPLICATION * DC to DC relay drivers,lamp drivers FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.18V(IC/IB=1.5A/0.03A) * PC= 1.3W (mounted on ceramic substrate). * High saturation current capability. 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 CONSTRUCTION 0.8MIN. * NPN Cilicon Transistor +0.08 0.45-0.05 MARKING +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Base 4.6MAX. 1.7MAX. 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 20 Volts Collector - Emitter Voltage Open Base VCEO - 15 Volts Emitter - Base Voltage Open Collector VEBO - 5 Volts IC - 6 Amps Peak Collector Current ICM - 9 Amps Peak Base Current IBM - 0.6 Amps PTOT - 1.3 Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature Note 1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. TSTG -55 W +150 o C C C TJ - +150 o TAMB -55 +150 o 2006-02 RATING CHARACTERISTIC CURVES ( CHT5564XPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=12V ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=4V ICEO - - 0.1 uA DC Current Gain VCE=0.5V; Note 1 IC=5A hFE 250 - - Collector-Emitter Saturation Voltage IC=1.5A; IB=0.03A VCEsat - 0.12 0.18 Volts Base-Emitter Saturation Voltage IC=1.5A; IB=0.03A VBEsat - 0.85 1.2 Volts Output Capacitance IE=ie=0; VCB=10V; f=1MHz CC - 23 - pF Transition Frequency IC=-0.5A; VCE=2.0V; f=100MHz fT - 380 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. CONDITION