CHENMKO CHT5564XPT

CHENMKO ENTERPRISE CO.,LTD
CHT5564XPT
SURFACE MOUNT
NPN Epitaxial Transistor
VOLTAGE 15 Volts
CURRENT 6 Amperes
APPLICATION
* DC to DC relay drivers,lamp drivers
FEATURE
SC-62/SOT-89
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage VCE(sat)=0.18V(IC/IB=1.5A/0.03A)
* PC= 1.3W (mounted on ceramic substrate).
* High saturation current capability.
1.6MAX.
4.6MAX.
0.4+0.05
2.5+0.1
CONSTRUCTION
0.8MIN.
* NPN Cilicon Transistor
+0.08
0.45-0.05
MARKING
+0.08
0.40-0.05
+0.08
0.40-0.05
1.50+0.1
1.50+0.1
1
1 Base
4.6MAX.
1.7MAX.
2
3
2 Collector ( Heat Sink )
CIRCUIT
3 Emitter
1
B
2
C
3
E
SC-62/SOT-89
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
20
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
15
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
5
Volts
IC
-
6
Amps
Peak Collector Current
ICM
-
9
Amps
Peak Base Current
IBM
-
0.6
Amps
PTOT
-
1.3
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Note
1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
TSTG
-55
W
+150
o
C
C
C
TJ
-
+150
o
TAMB
-55
+150
o
2006-02
RATING CHARACTERISTIC CURVES ( CHT5564XPT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=12V
ICBO
-
-
0.1
uA
Emitter Cut-off Current
IC=0; VEB=4V
ICEO
-
-
0.1
uA
DC Current Gain
VCE=0.5V; Note 1
IC=5A
hFE
250
-
-
Collector-Emitter Saturation Voltage
IC=1.5A; IB=0.03A
VCEsat
-
0.12
0.18
Volts
Base-Emitter Saturation Voltage
IC=1.5A; IB=0.03A
VBEsat
-
0.85
1.2
Volts
Output Capacitance
IE=ie=0; VCB=10V;
f=1MHz
CC
-
23
-
pF
Transition Frequency
IC=-0.5A; VCE=2.0V;
f=100MHz
fT
-
380
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
CONDITION