Clairex ® CLT335 Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 (5.33) 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) N/C BASE EMITTER 0.100 (2.54) dia 0.025 (0.64) max 0.060 (1.52) max 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ....................................................................... -65°C to +150°C • 18° acceptance angle operating temperature .................................................................... -65°C to +125°C • custom aspheric lensed TO-18 lead soldering temperature(1) .......................................................................... 260°C package collector-emitter voltage...................................................................................... 25V • transistor base is not bonded • tested and characterized at 850nm continuous collector current ............................................................................. 50mA maximum continuous power dissipation .................................................... 250mW(2) description notes: The CLT335 is a silicon NPN 1. 0.06” (1.5mm) from the header for 5 seconds maximum phototransistor mounted in a TO-18 2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C. package which features a custom double convex glass-to-metal sealed aspheric lens. Narrow acceptance angle enables excellent on-axis coupling. The CLT335 is mechanically and spectrally matched to Clairex's CLE335 LED. For additional information, call Clairex. electrical characteristics (TA = 25°C unless otherwise noted) symbol IL ICEO parameter min typ max units Light current(1) 3.0 - 5 - µA mA VCE=5V, Ee=20µW/cm2 VCE=5V, Ee=1mW/cm2 - - 100 nA VCE=10V, Ee=0 25 - - V IC=100µA IC=0.8mA Collector dark current V(BR)CEO Collector-emitter breakdown (2) tr, tf Output rise and fall time - 5 - µs θHP Total angle at half sensitivity points - 18 - deg. notes: test conditions 1. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 850nm. 2. VCC=5V, RL=1kΩ. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-422-4676 1301 East Plano Parkway Fax: 972-423-8628 Revised 09/28/04 Plano, Texas 75074-8524 www.clairex.com