CLI710 ® Clairex IRED – Phototransistor Reflective Object Sensor Technologies, Inc. March, 2002 0.500(12.7) min. 1. Cathode Vcc 2. Anode 0.100 Dia 0.175 (4.46) 0.165 (4.21) 3. Emitter Output 4. Collector Ground to header 0.048 (1.22) 0.028 (0.71) 3 0.187 (4.75) 0.179 (4.55) Internally 4 connected 2 0.046 (1.17) 0.036 (0.91) 1 0.021 (0.53) Dia 0.017 (0.43) 43 Places 0.030 (0.76) max. 0.160 (4.08) Emitting Window 0.150 (3.81) Diameter 0.230 (5.84) 0.209 (5.31) 0.020 (0.50) Diameter Detection Area 45° 2 2 4 1 3 1 4 3 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ........................................................................ -40°C to +125°C operating temperature ..................................................................... -40°C to +100°C lead soldering temperature(1) ........................................................................... 260°C IRED continuous forward DC current(2) ......................................................................35mA description reverse DC voltage................................................................................................5V The CLI710 consists of an 880nm continuous power dissipation(3)......................................................................100mW AlGaAs IRED and a phototransistor mounted on a custom TO-72 header. PHOTOTRANSISTOR collector-emitter voltage ......................................................................................30V The IRED emits a broad radiation emitter-collector voltage ........................................................................................5V pattern through the formed clear continuous power dissipation(4)......................................................................100mW epoxy lens. Radiation reflected note: from the target is received by a 1. 0.06” (1.5mm) from the header for 5 seconds maximum 0.020” diameter fiber optic light pipe 2. Derate linearly 0.37mA/°C from 25°C free air temperature to TA = +100°C. attached to the active area of the 3. Derate linearly 1.07mW/°C from 25°C free air temperature to TA = +100°C. phototransistor. For assistance or 4. Derate linearly 1.07mW/°C from 25°C free air temperature to TA = +100°C. other configurations, call Clairex. features • 0.020” dia. light pipe aperture • T0-72 package • analog output electrical characteristics (TA = 25°C and VCC = 5.0V unless otherwise noted) symbol parameter Input IRED VF IR Forward voltage Reverse current min typ max units test conditions - 1.50 - 1.65 10 V µA IF = 20mA VR = 5V 30 5.0 - - 20 V V nA IC = 1mA, IF = 0, Ee = 0 IE = 100µA, IF = 0, Ee = 0 VCE = 10V, IF = 0, Ee = 0 Output Phototransistor V(BR)CEO V(BR)ECO ID Collector-emitter breakdown voltage Emitter-collector breakdown voltage Dark current Coupled Light current(4) 150 250 µA Crosstalk ratio(5) 3 10 ICX (ratio) notes: 4. Measured using a Kodak 90% diffuse reflectance neutral white test card. 5. No reflective surface. ICX(ratio) = IL(µA)/ICX(µA). IL VCE = 5V, IF = 20mA, d = 0.030” VCE = 5V, IF = 20mA Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Revised 3/16/06 Plano, Texas 75074-8524 www.clairex.com