IS62C1024LL IS62C1024LL 128K x 8 LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 70 ns Low active power: 350 mW (typical) Low standby power: 125 µW (typical) CMOS standby Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V (±10%) power supply Data retention voltage: 2V(min.) DESCRIPTION The 1+51 IS62C1024LL is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using 1+51 's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024LL is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 512 x 2048 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VCC GND I/O0-I/O7 CE1 CE2 OE WE CONTROL CIRCUIT ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. SR028-0C 1 IS62C1024LL PIN CONFIGURATION PIN CONFIGURATION 32-Pin SOP and DIP NC 1 32 VCC A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE A2 10 23 A10 A1 11 22 CE1 A0 12 21 I/O7 I/O0 13 20 I/O6 I/O1 14 19 I/O5 I/O2 15 18 I/O4 GND 16 17 I/O3 32-Pin 8x20mm TSOP-1 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 PIN DESCRIPTIONS A0-A16 Address Inputs CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output Vcc Power GND Ground OPERATING RANGE Range Commercial Ambient Temperature 0°C to +70°C VCC 5V ± 10% TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write 2 WE CE1 CE2 OE X X H H L H X L L L X L H H H X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB, ISB ISB, ISB ICC ICC ICC Integrated Circuit Solution Inc. SR028-0C IS62C1024LL ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to +7.0 45 to +85 65 to +150 1.5 20 Unit V °C °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Parameter CIN Input Capacitance COUT Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH VOL VIH VIL ILI ILO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage VCC = Min., IOH = 1.0 mA VCC = Min., IOL = 2.1 mA 2.4 2.2 0.3 2 2 0.4 VCC + 0.5 0.8 1 1 V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC Com. Com. Notes: 1. VIL = 3.0V for pulse width less than 10 ns. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -70 ns Min. Max. Unit Symbol Parameter Test Conditions ICC1 Vcc Dynamic Operating Supply Current VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. 70 mA ICC2 Vcc Dynamic Operating Supply Current VCC = Max., CE = VIL IOUT = 0 mA, f = 1 MHZ Com. 15 mA ISB TTL Standby Current (TTL Inputs) VCC = Max., VIN = VIH or VIL, CE1 ≥ VIH, or CE2 ≤ VIL, f = 0 Com. 2 mA ISB CMOS Standby Current (CMOS Inputs) VCC = Max., CE1 ≤ VCC 0.2V, CE2 ≤ 0.2V, VIN > VCC 0.2V, or VIN ≤ 0.2V, f = 0 Com. 25 µA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Integrated Circuit Solution Inc. SR028-0C 3 IS62C1024LL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Min. -70 Max. Unit tRC Read Cycle Time 70 ns tAA Address Access Time 70 ns tOHA Output Hold Time 3 ns tACE CE1 Access Time 70 ns tACE CE2 Access Time 70 ns tDOE OE Access Time 35 ns tLZOE OE to Low-Z Output 0 ns tHZOE OE to High-Z Output 0 25 ns tLZCE CE1 to Low-Z Output 10 ns tLZCE CE2 to Low-Z Output 10 ns tHZCE CE1 or CE2 to High-Z Output 0 25 ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 5 ns 1.5V See Figures 1a and 1b AC TEST LOADS 480 Ω 480 Ω 5V 5V OUTPUT OUTPUT 30 pF Including jig and scope Figure 1a. 4 255 Ω 5 pF Including jig and scope 255 Ω Figure 1b. Integrated Circuit Solution Inc. SR028-0C IS62C1024LL AC WAVEFORMS READ CYCLE NO. 1(1,2) tRC ADDRESS tAA tOHA tOHA DOUT DATA VALID READ CYCLE NO. 2(1,3) tRC ADDRESS tAA tOHA OE tDOE CE1 tHZOE tLZOE tACE1/tACE2 CE2 DOUT tLZCE1/ tLZCE2 HIGH-Z tHZCE DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. Integrated Circuit Solution Inc. SR028-0C 5 IS62C1024LL WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power) Symbol Parameter Min. -70 Max. Unit tWC Write Cycle Time 70 ns tSCE CE1 to Write End 60 ns tSCE CE2 to Write End 60 ns tAW Address Setup Time to Write End 60 ns tHA Address Hold from Write End 0 ns Address Setup Time 0 ns tPWE WE Pulse Width 50 ns tSD Data Setup to Write End 30 ns tSA " tHD Data Hold from Write End 0 ns tHZWE WE LOW to High-Z Output 25 ns tLZWE WE HIGH to Low-Z Output 5 ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. AC WAVEFORMS WRITE CYCLE NO. 1 (99- Controlled)(1,2) tWC ADDRESS tHA tSCE1 CE1 tSCE2 CE2 tAW tPWE(4) WE tSA DOUT DATA UNDEFINED tHZWE tLZWE HIGH-Z tSD DIN 6 tHD DATA-IN VALID Integrated Circuit Solution Inc. SR028-0C IS62C1024LL WRITE CYCLE NO. 2 (+- +-, CE2 Controlled)(1,2) +- tWC ADDRESS tSA tHA tSCE1 CE1 tSCE2 CE2 tAW tPWE(4) WE tHZWE DOUT tLZWE HIGH-Z DATA UNDEFINED tHD tSD DIN DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Test Condition Min. Max. Unit VDR Vcc for Data Retention See Data Retention Waveform 2.0 5.5 V IDR Data Retention Current Vcc = 3.0V, CE1 > Vcc 0.2V Vcc = 3.0V, CE2 < 0.2V 10 10 µA µA tSDR Data Retention Setup Time See Data Retention Waveform 0 ns tRDR Recovery Time See Data Retention Waveform 5 ms Com. Com. Notes: 1. IDR Maximum 3 µA @ TA 0oC to 40oC. DATA RETENTION WAVEFORM (+- +- Controlled) tSDR 5.0V 3.0V tRDR VCC VDR CE1 GND Integrated Circuit Solution Inc. SR028-0C Data Retention Mode CE1 ≥ VCC - 0.2V 7 IS62C1024LL DATA RETENTION WAVEFORM (CE2 Controlled) Data Retention Mode 5.0V VCC tSDR CE2 3.0V tRDR VDR CE2 ≤ 0.2V 0.4V GND ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) 70 70 70 Order Part No. Package IS62C1024LL-70W 600mil DIP IS62C1024LL-70Q 450mil SOP IS62C1024LL-70T 8*20mm TSOP-1 Integrated Circuit Solution Inc. HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw 8 Integrated Circuit Solution Inc. SR028-0C