ISAHAYA 2SC5633

〈SMALL-SIGNAL TRANSISTOR〉
2SC5633
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC5633 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high voltage application.
hFE rank
4.4±0.1
Lot No.
1.6±0.1
φ1
FEATURE
2.5±0.1
●Small collector to emitter saturation voltage.
VCE(sat)=0.5V max
0.8MIN
1.5±0.1
●Super mini package for easy mounting
1.5±0.1
Abbreviation
0.4±0 0
. 7
0.5±0 0
. 7
0.4±0 0
. 7
For kind
01
. MAX
APPLICATION
For Hybrid IC, DC-DC converter
JEITA:SC-62
TERMINAL CONNECTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
①:EMITTER
Ratings
Unit
VCBO
Collector to Base voltage
300
V
VCEO
Collector to Emitter voltage
300
V
VEBO
Emitter to Base voltage
IO
Collector current
Pc
Tj
Tstg
7
②:COLLECTOR
③:BASE
V
100
mA
Collector dissipation
500
mW
Junction temperature
+150
℃
Storage temperature
-55∼+150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=50μA ,I E=0
300
-
-
V
E to B break down voltage
V(BR) EBO
I E=50μA ,I C=0
7
-
-
V
C to E break down voltage
V(BR)CEO
I C=1mA ,R
300
-
-
V
BE=∞
Collector cut off current
ICBO
V CB=-300V, I E=0mA
-
-
0.5
μA
Emitter cut off current
IEBO
V EB=5V, I C=0mA
-
-
0.5
μA
DC forward current gain
hFE
V CE=10V, I C=10mA
60
-
305
VCE(sat)
I C=100mA ,IB=10mA
-
-
0.5
V
fT
V CE=6V, I E=-10mA
-
40
-
MHz
V CB=6V, I E=0,f=1MHz
-
3.0
-
pF
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Cob
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003