ISAHAYA INA6001AP1

<SMALL-SIGNAL TRANSISTOR>
PRELIMINARY
INA6001AP1
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
UNIT:mm
INA6001AP1 is a silicon PNP transistor.
4.6 MAX
1.6
It is designed with high voltage.
1.5
FEATURE
C
E
Ic=-1A
0.8 MIN
・High collector current
・Low voltage VCE(sat) = -0.5V(MAX)
B
2.5
・High voltage VCEO = -100V
4.2 MAX
・Small package for easy mounting.
0.53
MAX
1.5
APPLICATION
0.4
0.48 MAX
3.0
Relay drive, Power supply
マーキング
MARKING
TERMINAL
CONNECTOR
電極接続
E:EMITTER
E: エミッタ
JEITA:SC-62
EIAJ
: SC-62
JEDEC:SOT-89
JEDEC :
C: コレクタ
C:COLLECTOR
B: ベース
B:BASE
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
-120
V
-6
V
-100
V
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
I
Collector current
-1
A
PC
Collector dissipation(Ta=25℃)
500
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
C
MARKING
Type Name
B G
W
LOT №
hFE ITEM
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
LIMITS
TYP
MAX
UNIT
V(BR)CBO
C to B break down voltage
I C=-100μA,I E=0mA
-120
-
-
V
V(BR)EBO
E to B break down voltage
I E=-100μA,I C=0mA
-6
-
-
V
V(BR)CEO
C to E break down voltage
I C=-10mA,RBE=∞
-100
-
-
V
ICBO
Collector cut off current
VCB=-120V,I E =0mA
-
-
-500
nA
IEBO
Emitter cut off current
VEB=-6V,I C=0mA
-
-
-500
nA
hFE1
DC forward current gain1
VCE=-2V,I C=-150mA
140
-
330
-
hFE2
DC forward current gain2
VCE=-5V,I C=-1A
40
-
-
-
VCE(sat)
C to E saturation voltage
I C=-500mA,I B=-50mA
-
-
-0.5
V
VBE(sat)
B to E saturation voltage
I C=-500mA,I B=-50mA
fT
Gain bandwidth product
VCE=-5V,I E=50mA
Cob
Collector output capacitance
VCB=-10V,I E=0mA,f=1MHz
ISAHAYA ELECTRONICS CORPORATION
-
-
-1.1
V
100
-
-
MHz
-
-
10
pF
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Mar.2013