RT1C3904-T12 PRELIMINARY Notice:this is not a final specification. Some parametric limits are subject to change. Transistor For General purpose Application Silicon NPN Epitaxial Type RT1C3904 is a one chip transistor. OUTLINE DRAWING UNIT:mm FEATURE 0.5 ・Mini package for easy mounting. APPLICATION 2.5 1.5 0.5 1 General purpose transistor 3 2 MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL VCEO Collector to Emitter voltage VCBO RATINGS UNIT 40 V Collector to Base voltage Emitter to Base voltage 60 6.0 V VEBO IC Collector current 200 mA V Terminal Connector 1 2 3 : Base : Emitter : Collector EIAJ : SC-59 JEDEC : TO-236 resemblance THERMAL CHARACTERISTICS SYMBOL PD Characteristics Total Device Dissipation Glass-Epoxi Board(1) Ta=25℃ Derate Adove 25℃ RθJA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate(2)Ta=25℃ PD Derate Adove 25℃ RθJA Tj Tstg Thermal Resistance Junction to Ambient Junction temperature Storage temperature RATINGS 225 UNIT mW 1.8 mW/℃ 556 ℃/mW 300 mW 2.4 mW/℃ 417 ℃/mW ℃ +150 -55 to +150 Equivalent Circuit COLLECTOR BASE EMITTER ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) LIMITS SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO I BL I CEX PARAMETER TESTCONDITIONS MIN C to E break down voltage(3) C to B break down voltage I C=1.0mA, I B=0 40 I C=10μA, I E=0 60 E to B break down voltage I C=10μA, I C=0 VCE=30V, V EB=3.0V 6 Base cut off current Collector cut off current VCE=30V, V EB=3.0V TYP 1.Glass-Epoxi=1.0×0.75×3.2in 2.Alumina=0.4×0.3×3.2 in 3.Pulse test ISAHAYA ELECTRONICS CORPORATION MAX UNIT V V V 50 nA 50 nA RT1C3904-T12 Transistor For General purpose Application Silicon NPN Epitaxial Type LIMITS SYMBOL hFE V CE(sat) V BE(sat) fT Cobo PARAMETER DC current gain Collector-Emitter saturation Voltage Base-Emitter saturation Voltage TESTCONDITIONS I C=0.1mA, VCE=1.0V I C=1.0mA, VCE=1.0V I C=10mA, VCE=1.0V I C=50mA, VCE=1.0V I C=100mA, VCE=1.0V I C=10mA, IB=1.0mA I C=50mA, IB=5.0mA I C=10mA, IB=1.0mA I C=50mA, IB=5.0mA Current Gain Bandwidth product I C=10mA, VCE=20V,f=100MHz Output Capacitance VCB=5V, IE=0,fT=1.0MHz MIN 40 70 100 60 30 − − 0.65 − TYP MAX − − 300 − − 0.2 0.3 0.85 0.95 300 − − 4.0 ISAHAYA ELECTRONICS CORPORATION UNIT V V V V MHz pF Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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