ISAHAYA 2SC5728

〈SMALL-SIGNAL TRANSISTOR〉
2SC5728
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC5728 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
1,6
It is designed for high frequency application.
0.8
0.5
0.5
②
1.6
1.0
①
0.4
0.3
0.4
.
FEATURE
③
● High gain bandwidth product.
fT=10.0GHz
●High gain, low noise.
0~0.1
●Super mini package for easy mounting
0.55
0.7
●Can operate at low voltage.
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
JEITA:SC-90
TERMINAL CONNECTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
①:BASE
Ratings
Unit
VCBO
Collector to Base voltage
15
V
VCEO
Collector to Emitter voltage
6
V
VEBO
I
O
Emitter to Base voltage
1.5
V
Collector current
50
mA
Pc
Collector dissipation
125
mW
Tj
Junction temperature
+125
℃
Tstg
Storage temperature
-55~+125
℃
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB=1V, I C=0mA
DC forward current gain
hFE
V
CE
=3V, I C=10mA
fT
V
CE
=3V, I E=10mA
Cob
V
CB=3V, I E=0mA,f=1MHz
|S21|
V
CE
NF
V
CE
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
2
=10V, I E=0mA
Limits
Min
Typ
Max
Unit
-
-
1.0
μA
-
-
1.0
μA
30
-
250
-
10.0
-
GHz
-
0.7
-
pF
=3V, I C=10mA,f=1GHz
10.0
13.0
-
dB
=3V, I C=5mA,f=1GHz
-
1.4
-
dB
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003