ISAHAYA 2SC5633_09

〈SMALL-SIGNAL TRANSISTOR〉
2SC5633
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC5633 is a super mini package resin sealed
4.6 MAX
1.6
C
0.8 MIN
E
FEATURE
● Low collector to emitter saturation voltage.
0.53
MAX
0.4
0.48 MAX
1.5
VCE(sat)=0.5V max
B
4.2 MAX
It is designed for high voltage application.
1.5
2.5
silicon NPN epitaxial transistor,
3.0
MARKING
●Super mini package for easy mounting
TERMINAL CONNECTER
APPLICATION
E: EMITTER
C: COLLECTOR
B: BASE
For Hybrid IC, DC-DC converter
EIAJ : SC-62
JEDEC :
Note)
The dimension without tolerance represent central value.
MAXIMUM RATINGS(Ta=25℃)
Symbol
Ratings
Unit
VCBO
Collector to Base voltage
300
V
VCEO
Collector to Emitter voltage
300
V
VEBO
I
Parameter
Emitter to Base voltage
7
TYPE NAME
A J
V
Collector current
100
mA
Pc
Collector dissipation
500
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
O
MARKING
Q
LOT No.
hFE ITEM
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=50μA ,I E=0
300
-
-
V
E to B break down voltage
V(BR) EBO
I E=50μA ,I C=0
7
-
-
V
C to E break down voltage
V(BR)CEO
300
-
-
Collector cut off current
ICBO
V
CB=300V, I E=0mA
-
-
0.5
μA
Emitter cut off current
IEBO
V
EB
=5V, I C=0mA
-
-
0.5
μA
hFE
V
CE
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
I C=1mA ,R
BE
=∞
V
=10V, I C=10mA
60
-
305
I C=100mA ,IB=10mA
-
-
0.5
V
fT
V
CE
=6V, I E=-10mA
-
40
-
MHz
Cob
V
CB
=6V, I E=0,f=1MHz
-
3.0
-
pF
VCE(sat)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Feb.2009