ＲＴ１Ｎ２３０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N230U RT1N230C 2.5 1.6 0.5 0.95 0.3 0.5 ② 1.6 1.0 ・Built-in bias resistor (R1=2.2kΩ) 0.5 FEATURE ① 1.5 0.5 0.4 ① 0.95 0.8 2.9 1.90 0.4 UNIT：mm ② 0.4 RT1N230X is a one chip transistor with built-in bias resistor, PNP type is RT1P230X. DRAWING ③ ③ C (OUT) JEITA：－ JEDEC：－ E (GND) JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector Terminal Connector ①：Base ②：Emitter ③：Collector RT1N230M RT1N230T RT1N230S 2.1 0.2 Terminal Connector ①：Emitter ②：Collector ③：Base ③ 0.15 JEITA：SC-70 JEDEC：－ JEITA：－ JEDEC：－ ② 0～0.1 0.7 0.9 0.4 2.5 ③ ① 1.2 0.8 ③ 1.27 1.27 ② 0.2 0.45 ② 0.3 0.65 0.45 ① 0.65 2.0 1.3 1.0 14.0 1.0 0.1 0.8 0.425 0.4 1.25 3.0 0.425 0.4 4.0 0.25 B (IN) ① 0.16 0～0.1 0～0.1 Equivalent circuit R1 0.8 1.1 0.15 0.55 Inverted circuit, switching circuit, interface circuit, driver circuit. 0.7 APPLICATION Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 〈Transistor〉 ＲＴ１Ｎ２３０Ｘ SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Ｉ ＣＭ ＰＣ Ｔｊ Ｔｓｔｇ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N230T RT1N230U 125 （※ ） +125 -55～+125 RATING RT1N230M 50 6 50 100 200 150 RT1N230C 200 +150 -55～+150 RT1N230S 450 UNIT V V V mA mA mW ℃ ℃ （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION MIN 50 I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =1mA I C =10mA，I B =0.5mA E 100 =-10mA TYPICAL CHARACTERISTICS I NP UT O N VO LTAGE VS .CO LLECTO R CUR R ENT DC FO RWAR D CURRENT GAI N V S .CO LL ECTO R CURRENT 1000 VCE=0.2V DC FORWARD CURRENT GAIN ｈ ＦＥ INPUT ON VOLTEGE ＶI(ON)（Ｖ） 10 1 VCE=5V 100 10 0.1 0.1 1 10 COLLECTOR CURRENT Ｉ Ｃ（ｍＡ） 100 0.1 1 10 COLLECTOR CURRENT ＩＣ（ｍＡ） 100 CO L LECTO R CUR R ENT VS .I NP UT O FF VO LTA GE 1000 COLLECTOR CURRENT Ｉ Ｃ（μＡ） VCE=5V 100 10 0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE ＶＩ（ＯＦＦ） （Ｖ） MAX 0.1 1.5 VCE=6V，I LIMIT TYP 2 ISAHAYA ELECTRONICS CORPORATION 2.2 200 0.3 2.8 UNIT V μA － V kΩ MHz Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003