PRELIMINARY RT3T22M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N241 chip and RT1P241 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent. Mini package for easy mounting ① ⑥ 0.65 Silicon epitaxial type ② ⑤ 0.65 FEATURE ③ ④ 0.2 RT3T22M Unit：mm APPLICATION Inverted circuit, switching circuit, 0.13 0∼0.1 0.65 0.9 interface circuit, driver circuit ※PNP built in transistor of ”−”sign is abbreviation. ⑥ ④ ⑤ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 R1 RTr1 R2 RTr2 R2 ① R1 ② JEITA：SC-88 ③ MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT VCBO Collector to Base voltage PARAMETER 50 V VEBO Emitter to Base voltage 10 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation（Total, Ta=25℃） 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING ISAHAYA ELECTRONICS CORPORATION 6 5 4 .T 2 2 １ 2 3 PRELIMINARY RT3T22M CompositeTransistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ ICBO Collector cut off current VCB =50V,IE=0 hFE DC forward current gain VCE=5V,IC=5mA VCE(sat) Collector to Emitter saturation voltage VI(ON) Input on voltage Max Unit Min Typ 50 - - V - - 0.1 μA 50 - - - IC=10mA,IB=0.5mA - 0.1 0.3 V VCE=0.2V,IC=5mA - 1.8 3.0 V VI(OFF) Input off voltage VCE=5V,IC=100μA 0.8 1.1 - V R1 Input resistor - 16 22 28 kΩ R2/R1 Resistor ratio - 0.9 1.0 1.1 - fT Gain band width product VCE=6V,IE=-10mA - 200 - MHZ TYPICAL CHARACTERISTICS (Tr1) Input on voltage-collector current DC forward gain -collector current 10 1000 t u p n I VCE=0.2V VCE=5V E F h n i a g d r a w r o f C D 100 1 10 ) V ( ) n o ( I V e g a t l o v n o 0.1 1 10 100 1 10 collector current ＩＣ（ｍＡ） colector curent ＩＣ（ｍＡ） collector current - Input on voltage 1000 t n e r r u c r o t c e l l o C VCE=5V 100 ) A m ( c I 10 0.0 0.4 0.8 1.2 1.6 2.0 Input off voltage ＶＩ（ＯＦＦ）（Ｖ） ISAHAYA ELECTRONICS CORPORATION 100 TYPICAL CHARACTERISTICS (Tr2) Input on voltage-collector current DC forward gain -collector current -10 1000 t u p n I VCE=-0.2V VCE=-5V E F h n i a g d r a w r o f C D 100 -1 10 ) V ( ) n o ( I V e g a t l o v n o -0.1 -1 -10 -100 -1 -10 collector current ＩＣ（ｍＡ） colector curent ＩＣ（ｍＡ） collector current - Input on voltage -1000 t n e r r u c r o t c e l l o C VCE=-5V -100 ) A m ( c I -10 -0 -0.4 -0.8 -1.2 -1.6 -2 Input off voltage ＶＩ（ＯＦＦ）（Ｖ） ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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