RT3N22U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit:mm 1.6 ±0.05 RT3N22U is a composite transistor built with two RT1N241 in USM6F package. 1.2 ±0.05 1pin マーク 6 (0.5) FEATURE Silicon epitaxial type 1 0.5 Each transistor elements are independent. 1.6 ±0.05 Mini package for easy mounting (0.95) 1. 0 2 0.5 5 0.2 ±0.05 (0.5) APPLICATION 3 Inverted circuit, switching circuit, 4 (Φ0.1 ~0.2) interface circuit, driver circuit 0.12 ±0.05 0.5 ±0.05 ⑥ ④ ⑤ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 R1 RTr1 R2 RTr2 R2 R1 ① ② JEITA:- ISAHAYA:USM6F ③ MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT VCBO Collector to Base voltage PARAMETER 50 V VEBO Emitter to Base voltage 10 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation(Total, Ta=25℃) 125 mW Tj Junction temperature +150 ℃ Tstg Storage temperature -55~+150 ℃ MARKING ISAHAYA ELECTRONICS CORPORATION 6 5 4 22 1 2 3 RT3N22U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter (Tr1,Tr2 common) Limits Test conditions Typ Max 50 - - V V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ ICBO Collector cut off current VCB =50V,IE=0 hFE DC forward current gain VCE=5V,IC=5mA VCE(sat) Collector to Emitter saturation voltage IC=10mA,IB=0.5mA VI(ON) Input on voltage VCE=0.2V,IC=5mA VI(OFF) Input off voltage VCE=5V,IC=100μA R1 Input resistor - 16 R2/R1 Resistor ratio - 0.9 fT Gain band width product VCE=6V,IE=-10mA - 200 TYPICAL CHARACTERISTICS - 0.1 μA - - - - 0.1 0.3 V - 1.8 3.0 V 0.8 1.1 - V 22 28 kΩ 1.0 1.1 - - MHZ DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 100 VCE=0.2V VCE=5V DC FORWARD CURRENT GAIN hFE INPUT ON VOLTAGE VI(ON)(V) 50 (Tr1,Tr2 common) INPUT ON VOLTAGE VS. COLLECTOR CURRENT 10 100 10 1 1 10 100 1 10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 1000 VCE=5V COLLECTOR CURRENT IC(μA) Unit Min 100 10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003