ISAHAYA RT1N441T

RT1N441X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE
RT1N441X is a one chip transistor
with built-in bias resistor,PNP type is RT1P441X.
DRAWING
RT1N441U
UNIT:mm
RT1N441C
1.6
0.4
FEATURE
2.5
0.8
0.4
0.5
1.5
0.5
②
0.4
0.95
③
①
0.95
1.6
1.0
2.9
1.90
②
0.3
0.5
①
0.5
・Built-in bias resistor (R1=47kΩ,R2=47kΩ).
③
APPLICATION
B
(IN)
C
(OUT)
0.16
0~0.1
0.8
0~0.1
Equivalent circuit
R1
1.1
0.15
0.55
0.7
Inverted circuit,switching circuit,interface circuit,
driver circuit.
JEITA:-
JEDEC:-
R2
E
(GND)
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N441M
RT1N441S
RT1N441T
4.0
2.1
0.425
1.25
0.425
③
1.0
0.1
1.0
14.0
②
0.3
0.65
2.0
1.3
①
0.65
3.0
0.2
0.25
0.4
②
0.8
1.2
0.8
①
0.4
0.2
0.45
③
0~0.1
2.5
0.4
0.15
0.7
0. 5
0.9
1.27 1.27
JEITA、JEDEC:ISAHAYA:T-USM
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
①
②
③
JEITA:-
JEDEC:-
Terminal Connector
①:Emitter
②:Collector
③:Base
RT1N441X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
VIN
I C
I CM
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N441T
RATING
RT1N441M
RT1N441C
50
10
50
40
100
200
200
+150
-55~+150
RT1N441U
125(※)
+125
-55~+125
150
RT1N441S
UNIT
V
V
V
V
mA
mA
mW
℃
℃
450
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
PARAMETER
V(BR)CEO
I CBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
TEST CONDITION
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
I C=100μA,RBE=∞
VCB=50V,I E =0
VCE=5V,I C =5mA
I C =10mA,I B =0.5mA
VCE=0.2V,I C =5mA
VCE=5V,I C =100μA
VCE=6V,I
E
Input on voltage -Collector current
DC forward current gain hFE
Input on voltage VI(ON)
0.1
0.1
2.2
1.1
47
1.0
200
0.8
33
0.9
DC forward current gain -Collector current
VCE=0.2V
1
1000
VCE=5V
100
10
0.1
1
10
100
Collector current IC(mA)
1
10
Collector current IC(mA)
Collector current - Input off voltage
IC (mA)
1000
VCE=5V
100
10
0.0
0.4
0.8
1.2
1.6
MAX
50
=-10mA
10
Collector current
LIMIT
TYP
MIN
50
2.0
Input of voltage VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
100
0.3
5.0
61
1.1
UNIT
V
μA
-
V
V
V
kΩ
MHz
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Jan.2003