ISAHAYA RT3N33M

PRELIMINARY
RT3N33M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
DESCRIPTION
RT3N33M is a composite transistor built with
Unit:mm
2.1
RT1N441 chip and RT1N441 chip in SC-88 package.
2.0
Each transistor elements are independent.
Mini package for easy mounting
①
⑥
0.65
Silicon epitaxial type
②
⑤
0.65
FEATURE
③
④
0.2
1.25
APPLICATION
Inverted circuit, switching circuit,
0.13
0∼0.1
0.65
0.9
interface circuit, driver circuit
⑥
④
⑤
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
R1
RTr1
R2
R2
①
R1
②
RTr2
JEITA:SC-88
③
MAXIMUM RATING (Ta=25 ℃)
SYMBOL
RATING
UNIT
VCBO
Collector to Base voltage
PARAMETER
50
V
VEBO
Emitter to Base voltage
10
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
PC
Collector dissipation(Total, Ta=25℃)
150
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55∼+150
℃
MARKING
ISAHAYA ELECTRONICS CORPORATION
6
5
4
.N3 3
1
2
3
PRELIMINARY
RT3N33M
Compound Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
Symbol
Parameter
Limits
Test conditions
V(BR)CEO
Collector to Emitter break down voltage
IC=100μA,RBE=∞
ICBO
Collector cut off current
VCB =50V,IE=0
hFE
DC forward current gain
VCE=5V,IC=5mA
VCE(sat)
Collector to Emitter saturation voltage
IC=10mA,IB=0.5mA
VI(ON)
Input on voltage
VI(OFF)
Input off voltage
R1
Unit
Min
Typ
Max
50
-
-
V
-
-
0.1
μA
50
-
-
-
-
0.1
0.3
V
VCE=0.2V,IC=5mA
-
2.2
5.0
V
VCE=5V,IC=100μA
0.8
1.1
-
V
Input resistor
-
33
47
13
kΩ
R2/R1
Resistor ratio
-
0.9
1.0
1.1
-
fT
Gain band width product
VCE=6V,IE=-10mA
-
200
-
MHZ
TYPICAL CHARACTERISTICS
Input on voltage -Collector current
DC forward current gain -Collector current
1000
DC forward current gain hFE
Input on voltage VI
(ON)(V)
10
1
100
10
0.1
1
10
100
Collector current I
C(mA)
1
10
Collector current I
C(mA)
Collector current - Input off voltage
Collector current I
C (mA)
1000
100
10
0.0
0.4
0.8
1.2
1.6
2.0
Input of voltage VI
(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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herein.
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Jan.2003