〈Transistor〉 ＲＴ１P２４０Ｘ SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNIT：mm RT1P240X is a one chip transistor with built-in bias resistor,NPN type is RT1N240X. RT1P240U RT1P240C 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 ③ 0.4 2.9 1.90 0.95 0.95 0.3 0.5 ② 1.6 1.0 ① 0.5 ・Built-in bias resistor (R1=22kΩ). ① ② ③ APPLICATION C (OUT) 0.16 0∼0.1 0.8 0∼0.1 Equivalent circuit JEITA：− JEDEC：− B (IN) E (GND) JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector Terminal Connector ①：Base ②：Emitter ③：Collector RT1P240M RT1P240S 4.0 2.1 1.25 0.425 ② ③ 0.1 1.0 14.0 ① 1.0 0.3 2.0 1.3 0.65 0.65 3.0 0.425 0.45 0∼0.1 0.4 2.5 0.7 0.9 1.27 1.27 0.15 R1 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. JEITA：SC-70 JEDEC：− Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION ① ② ③ JEITA：− JEDEC：− Terminal Connector ①：Emitter ②：Collector ③：Base 〈Transistor〉 ＲＴ１P２４０Ｘ SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Ｉ ＣＭ ＰＣ Ｔ ｊ Ｔｓｔｇ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1P240U 150 +150 -55∼+150 RATING RT1P240M RT1P240C -50 -6 -50 -100 -200 200 +150 -55∼+150 RT1P240S 450 UNIT V V V mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ TEST CONDITION C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-1mA I C =-10mA，I B =-0.5mA 22 150 DC forward current gain-collector voltage 1000 VCE=-0.2V DC forward current gain hFE VCE=-5V -1 -0.1 -0.1 -1 -10 -100 collector voltage Ic (mA) 100 10 -0.1 -1 -10 collector voltage Ic(mA) collector voltage-Input off voltage -1000 VCE=-5V -100 -10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 MAX 100 VCE=-6V，I E =10mA -10 collector voltage Ic (uA) LIMIT TYP -0.1 15 Input on voltage - collector voltage Input on voltage VI(ON) (V) MIN -50 -2 Input off voltage VI(OFF) (V) ISAHAYA ELECTRONICS CORPORATION -100 -0.3 29 UNIT V μA − V kΩ MHz Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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