RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2A00M is a composite transistor built with two 2SA1602A chips in FEATURE ⑤ 0.65 ① Each transistor elements are independent. ●Mini package for easy mounting ② 0.65 2.0 ●Silicon pnp epitaxial type ④ ③ APPLICATION 0.13 0∼0.1 0.65 0.9 For low frequency amplify application ⑤ ④ Tr1 Tr2 ① ② ③ TERMINAL CONNECTOR ①:BASE1 ②:EMITTER(COMMON) ③:BASE2 ④:COLLECTOR2 ⑤:COLLECTOR1 JEITA:− JEDEC:− MAXIMUM RATINGS (Ta=25℃) (Tr1、Tr2) Symbol Parameter Ratings Unit VCBO Collector to Base voltage -60 V VEBO Emitter to Base voltage -6 V VCEO Collector to Emitter voltage -50 V I Collector current -200 mA PC Collector dissipation(Total Ta=25℃) 150 mW Tj Junction temperature +125 ℃ Tstg Storage temperature -55∼+125 ℃ C MARKING ⑤ ④ M ・E TYPE ISAHAYA ELECTRONICS CORPORATION ① ② ③ hFE ITEM RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1、Tr2) Symbol Parameter Test conditions Limits Max Unit Min Typ -50 - - V - - -0.1 μA V(BR)CEO Collector to Emitter break down voltage I C=-100μA,RBE=∞ ICBO Collector cut off current VCB=-60V,I E=0mA IEBO Emitter cut off current VEB=-6V,I C=0mA - - -0.1 μA hFE * DC forward current gain VCE=-6V,I C=-1mA 150 - 800 - hFE DC forward current gain VCE=-6V,I C=-0.1mA 90 - - - VCE(sat) Collector to Emitter saturation voltage I C=-100mA,I B=-10mA - - -0.3 V fT Gain band width product VCE=-6V,I E=10mA - 200 - MHz Cob Collector output capacitance VCB=-6V,I E=0mA,f=1MHz - 4.0 - pF NF Noise figure VCE=-6V,I E=0.3mA,f=100Hz,R G=10kΩ - - 20 dB * : It shows hFE classification in right table. ISAHAYA ELECTRONICS CORPORATION ITEM hFE E 150∼300 F 250∼500 MARKING M・E M・F RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE COMMON EMITTER OUTPUT COMMON EMITTER TRANSFER -50 -50 0.18mA Ta=25℃ 0.14mA -40 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 0.16mA 0.12mA 0.10mA -30 0.08mA 0.06mA -20 0.04mA -10 0.02mA -40 Ta=25℃ VCE=-6V -30 -20 -10 IB=0 -0 -0 -1 -2 -3 -4 -0 -0.0 -5 COLLECTOR EMITTER VOLTAGE VCE(V) -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 250 Ta=25℃ VCE=-6V 100(@IC=-1m GAIN BAND WIDTH PRODUCT fT(MHz) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 10000 1000 100 10 1 -0.1 Ta=25℃ VCE=-6V 200 150 100 50 0 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 0.1 1 10 EMITTER CURRENT IE(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) -1.0 Ta=25℃ IE=0 f=1MHz 10 1 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003