ISAHAYA RTAN430C

RTAN430X SERIES
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
OUTLINE DRAWING
RTAN430T2 (PRELIMINARY)
JEITA, JEDEC:-
ISAHAYA:T-USM
B
(IN)
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
RTAN430U
RTAN430C
1.6
2.5
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.4
0.5
③
0.16
②
0.8
1.1
①
1.5
0~0.1
0~0.1
0.55
0.15
③
0.95
0.5
0.95
0.4
2.9
1.90
②
0.8
0.3
0.5
①
0.5
0.4
1.6
1.0
(GND)
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
0.7
E
③
0~0.1
C
(OUT)
R1
0.3
②
0.425
0.15
①
1.25
0.7
0.9
0.5
EQUIVALENT CIRCUIT
③
0.65
1.2
0.8
2.0
1.3
②
0.2
0.25
0.4
①
0.425
0.65
0.8
0.2
APPLICATION
muting circuit , switching circuit
RTAN430M
2.1
0.4
・Built-in bias resistor (R1=4.7kΩ)
・Small package for easy mounting.
・High reverse hFE
・Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA)
・Low on Resistance
Ron=0.80Ω(TYP.)(@VI=5V)
Unit:mm
JEITA:SC-59
JEDEC:Similar to TO-236
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
RTAN430X SERIES
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
I C
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
PC
Tj
Tstg
125(※)
PARAMETER
V(BR)CBO
V(BR)EBO
V(BR)CEO
I CBO
I EBO
hFE
VCE(sat)
R1
fT
RON
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
Output “ON” resistance
150
RTAN430C
UNIT
V
V
V
mA
200
+125
-55~+125
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
RATING
RTAN430U
RTAN430M
40
40
20
400
RTAN430T2
mW
+150
-55~+150
℃
℃
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
MIN
40
40
20
I C=50μA,IE=0mA
I E=50μA,IC=0mA
I C=1mA,RBE=∞
VCB=40V,I E =0mA
VEB=40V,I C =0mA
VCE=5V,I C =10mA
I C =10mA,I B =0.5mA
LIMIT
TYP
MAX
0.5
0.5
2500
820
10
4.7
38
0.80
3.29
VCE=10V,I E =-10mA,f=100MHz
VI=5V,RL=1kΩ
6.11
UNIT
V
V
V
μA
μA
-
mV
kΩ
MHz
Ω
TYPICAL CHARACTERISTICS
collector current - Input on voltage
Input on voltage - collector current
1000
Ta=25℃
VCE=0.2V
collector current IC (μA)
Input on voltage VI(ON) (V)
100
10
1
Ta=25℃
VCE=5V
100
10
0.1
0.1
1
10
collector current IC (mA)
100
1000
0
0.2
0.4
0.6
Input off voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
0.8
1
DC revarse gain current - collector current
DC forward gain current - collector current
10000
DC reverse gain current hFER
DC forward gain current hFE
10000
1000
100
Ta=25℃
VCE=5V
10
1000
100
Ta=25℃
VEC=5V
10
1
1
0.1
1
10
100
1000
0.1
1
collector current IC (mA)
collector-emitter saturation
voltage - collector current
100
1000
Ron-VIN
100
1000
Ta=25℃
IC/IB=20
ON RESISTANCE Ron (Ω)
collector-emitter saturation voltage
VCE(sat) (mV)
10
collector current IC (mA)
100
10
1
0.1
10
1
Ta=25℃
0.1
0.1
1
10
100
collector current IC (mA)
1000
0.1
1
10
INPUT VOLTAGEVI (V)
ISAHAYA ELECTRONICS CORPORATION
100
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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Apr.2007