〈Transistor〉 ＲＴ１Ｎ１５０Ｘ SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING UNIT：mm RT1N150X is a one chip transistor with built-in bias resistor,PNP type is RT1P150X. RT1N150U RT1N150C 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 ③ 0.4 2.9 1.90 0.95 0.95 0.3 0.5 ② 1.6 1.0 ① 0.5 ・Built-in bias resistor (R1=100kΩ). ① ② ③ APPLICATION C (OUT) 0.16 0∼0.1 0.8 0∼0.1 Equivalent circuit JEITA：− JEDEC：− B (IN) E (GND) JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector Terminal Connector ①：Base ②：Emitter ③：Collector RT1N150M RT1N150S 4.0 2.1 1.25 0.425 ② 0.1 ③ 1.0 14.0 ① 1.0 0.3 2.0 1.3 0.65 0.65 3.0 0.425 0.45 0.4 0∼0.1 2.5 0.7 0.9 1.27 1.27 0.15 R1 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. JEITA：SC-70 JEDEC：− ① ② ③ JEITA：− JEDEC：− Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION Terminal Connector ①：Emitter ②：Collector ③：Base ＲＴ１Ｎ１５０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Ｉ ＣＭ ＰＣ Ｔ ｊ Ｔｓｔｇ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N150U 150 +150 -55∼+150 RATING RT1N150M RT1N150C 50 6 50 100 200 200 +150 -55∼+150 RT1N150S UNIT V V V mA mA mW ℃ ℃ 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） Ｒ１ ｆＴ C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product TEST CONDITION I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =1mA I C =1mA，I B =0.1mA MIN 50 LIMIT TYP 0.1 100 0.3 100 200 VCE=6V，I E =-10mA TYPICAL CHARACTERISTICS INPUT ON VOLTAGE VS.COLLECTOR CURRENT D C F O R W A R D C U R R E N T G A IN VS.COLLECTOR CURRENT 10 1000 DC FORWARD CURRENT GAIN ｈＦＥ INPUT ON VOLTEGE ＶI(ON)（Ｖ） VCE=0.2V 1 VCE=5V 100 10 0.1 1 10 100 COLLECTOR CURRENT ＩＣ（ｍＡ） 1 10 100 COLLECTOR CURRENT Ｉ ｍＡ） Ｃ（ COLLECTOR CURRENT VS.INPUT OFF VOLTAGE COLLECTOR CURRENT ＩＣ（μＡ） 1000 VCE=5V 100 10 0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE ＶＩ（ＯＦＦ）（Ｖ） MAX 2 ISAHAYA ELECTRONICS CORPORATION UNIT V μA − V kΩ MHz Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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