PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N144 chip and RT1P144 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent. Mini package for easy mounting ① ⑥ 0.65 Silicon epitaxial type ② ⑤ 0.65 FEATURE ③ ④ 0.2 RT3T14M Unit：mm APPLICATION Inverted circuit, switching circuit, 0.13 0∼0.1 0.65 0.9 interface circuit, driver circuit ※PNP built in transistor of ”−”sign is abbreviation. ⑥ ④ ⑤ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 R1 RTr1 R2 R2 ① R1 ② RTr2 JEITA：SC-88 ③ MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT VCBO Collector to Base voltage PARAMETER 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation（Total, Ta=25℃） 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING ISAHAYA ELECTRONICS CORPORATION 6 5 4 .T 5 5 １ 2 3 PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions Typ Max 50 - - V - - 0.1 μA V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ ICBO Collector cut off current VCB =50V,IE=0 hFE DC forward current gain VCE=5V,IC=5mA VCE(sat) Collector to Emitter saturation voltage IC=10mA,IB=5mA VI(ON) Input on voltage VCE=0.2V,IC=5mA VI(OFF) Input off voltage VCE=5V,IC=100μA R1 Input resistor - 7 R2/R1 Resistor ratio - Gain band width product fT Tr1 Tr2 VCE=6V,IE=-10mA 50 - - - - 0.1 0.3 V - 1.0 1.8 V 0.4 0.7 - V 10 13 kΩ 4.2 4.7 5.1 - - 200 150 - TYPICAL CHARACTERISTICS （Tｒ１） Input on voltage-collector current 1000 DC forward current Gain -collector current VCE=5V VCE=0.2V DC forward current Gain ｈＦＥ Input on voltage ＶＩ（ＯＮ）（Ｖ） 10 1 100 0.1 1 10 100 10 1 collector current ＩＣ（ｍＡ） 10 collector current ＩＣ（ｍＡ） collector current-Input off voltage collector current ＩＣ （ｍＡ） 1000 VCE=5V 100 10 0.0 0.4 0.8 1.2 1.6 Input off voltage ＶＩ（ＯＦＦ）（Ｖ） 2.0 ISAHAYA ELECTRONICS CORPORATION Unit Min 100 MHZ TYPICAL CHARACTERISTICS （Tｒ2） Input on voltage-collector current 1000 DC forward current Gain -collector current VCE=-5V DC forward current Gain ｈＦＥ Input on voltage ＶＩ（ＯＮ）（Ｖ） −10 VCE=-0.2V −1 − 0.1 −1 −10 −100 10 −1 collector current ＩＣ（ｍＡ） −1000 100 − 10 collector current ＩＣ（ｍＡ） collector current-Input off voltage collector current ＩＣ （ｍＡ） VCE=-5V −100 −10 −0.0 −0.4 −0.8 −1.2 − 1.6 Input off voltage ＶＩ（ＯＦＦ）（Ｖ） − 2.0 ISAHAYA ELECTRONICS CORPORATION −100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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