ISSI IS61LV12816L

ISSI
IS61LV12816L
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
®
OCTOBER 2005
FEATURES
DESCRIPTION
•
•
•
•
•
•
The ISSI IS61LV12816L is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using ISSI 's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
•
•
•
•
High-speed access time: 8, 10 ns
Operating Current: 50mA (typ.)
Stand by Current: 700µA (typ.)
TTL and CMOS compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128Kx16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O
DATA
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
COLUMN I/O
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
1
ISSI
IS61LV12816L
®
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
CE
OE
LB
UB
X
H
X
H
H
H
L
L
L
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
PIN CONFIGURATION
44-Pin TSOP (Type II) (T)
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ICC
ICC
ICC
PIN DESCRIPTIONS
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A0-A16
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
VDD
Power
GND
Ground
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI
IS61LV12816L
®
PIN CONFIGURATION
48-Pin mini BGA (B)
2
3
4
5
6
LB
OE
A0
A1
A2
NC
B
I/O8
UB
A3
A4
CE
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
GND
I/O11
NC
A7
I/O3
VDD
E
VDD
I/O12
NC
A16
I/O4
GND
F
I/O14
I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
NC
A8
A9
A10
A11
NC
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
44 43 42 41 40 39 38 37 36 35 345
33
1
32
2
31
3
30
4
29
5
TOP VIEW
28
6
27
7
26
8
25
9
24
10
23
11
12 13 14 15 16 17 18 19 20 21 22
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
WE
A0
A1
A2
A3
A4
NC
A5
A6
A7
A8
A
A16
A15
A14
A13
A12
A11
A10
A9
OE
UB
LB
1
44-Pin LQFP (LQ)
PIN DESCRIPTIONS
A0-A16
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
VDD
Power
GND
Ground
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
3
ISSI
IS61LV12816L
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VDD
VTERM
TSTG
PT
Note:
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to 4.0V
–0.5 to VDD + 0.5
–65 to + 150
1.0
Unit
V
V
°C
W
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
VDD (8 nS)
3.3V + 10%, -5%
3.3V + 10%, -5%
VDD (10 nS)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
—
V
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
—
0.4
V
VIH
Input HIGH Voltage(1)
2
VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–1
1
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–1
1
µA
Note:
1.
4
VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI
IS61LV12816L
®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
-8 ns
Min. Max.
-10 ns
Min. Max.
Parameter
Test Conditions
Unit
ICC
VDD Operating
Supply Current
VDD = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
typ.(2)
—
—
—
65
70
50
—
—
—
60
65
50
mA
ISB1
TTL Standby
Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = max
Com.
Ind.
—
—
30
35
—
—
25
30
mA
ISB2
CMOS Standby
Current
(CMOS Inputs)
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.(2)
—
—
—
3
4
700
—
—
—
3
4
700
mA
mA
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.3V, TA=25oC. Not 100% tested.
CAPACITANCE(1)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
5
ISSI
IS61LV12816L
®
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
319 Ω
ZO = 50Ω
3.3V
50Ω
1.5V
OUTPUT
OUTPUT
30 pF
Including
jig and
scope
5 pF
Including
jig and
scope
Figure 1.
353 Ω
Figure 2.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
Parameter
-8 ns
Min. Max
-10 ns
Min. Max.
Unit
tRC
Read Cycle Time
8
—
10
—
ns
tAA
Address Access Time
—
8
—
10
ns
tOHA
Output Hold Time
3
—
3
—
ns
tACE
CE Access Time
—
8
—
10
ns
tDOE
OE Access Time
—
3.5
—
4
ns
tHZOE(2)
OE to High-Z Output
—
3.5
—
4
ns
tLZOE
OE to Low-Z Output
0
—
0
—
ns
(2)
tHZCE
CE to High-Z Output
0
3.5
0
4
ns
tLZCE(2)
CE to Low-Z Output
3.5
—
3
—
ns
tBA
(2)
LB, UB Access Time
—
3.5
—
4
ns
(2)
tHZB
LB, UB to High-Z Output
0
3.5
0
4
ns
(2)
tLZB
LB, UB to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI
IS61LV12816L
®
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
t RC
ADDRESS
t AA
t OHA
t OHA
DOUT
DATA VALID
PREVIOUS DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t RC
ADDRESS
t AA
t OHA
OE
t HZOE
t DOE
t LZOE
CE
t ACE
t HZCE
t LZCE
LB, UB
DOUT
HIGH-Z
t LZB
t BA
t HZB
DATA VALID
UB_CEDR2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
7
ISSI
IS61LV12816L
®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol
Parameter
-8 ns
Min. Max
-10 ns
Min. Max.
Unit
tWC
Write Cycle Time
8
—
10
—
ns
tSCE
CE to Write End
7
—
8
—
ns
tAW
Address Setup Time
to Write End
7
—
8
—
ns
tHA
Address Hold from Write End
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
ns
tPBW
LB, UB Valid to End of Write
6.5
—
8
—
ns
tPWE1
WE Pulse Width (OE = HIGH)
6
—
7
—
ns
tPWE2
WE Pulse Width (OE = LOW)
6.5
—
8
—
ns
tSD
Data Setup to Write End
4
—
5
—
ns
tHD
Data Hold from Write End
0
—
0
—
ns
tHZWE(3)
WE LOW to High-Z Output
—
3
—
4
ns
tLZWE(3)
WE HIGH to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI
IS61LV12816L
®
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)
t WC
VALID ADDRESS
ADDRESS
t SA
t SCE
t HA
CE
t AW
t PWE1
t PWE2
WE
t PBW
UB, LB
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
UB_CEWR1.eps
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
9
ISSI
IS61LV12816L
®
WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)
t WC
ADDRESS
VALID ADDRESS
t HA
OE
CE
LOW
t AW
t PWE1
WE
t SA
t PBW
UB, LB
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t SD
t HD
DATAIN VALID
DIN
UB_CEWR2.eps
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t WC
ADDRESS
VALID ADDRESS
OE
LOW
CE
LOW
t HA
t AW
t PWE2
WE
t SA
t PBW
UB, LB
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
UB_CEWR3.eps
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI
IS61LV12816L
®
WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)
t WC
ADDRESS
t WC
ADDRESS 1
ADDRESS 2
OE
t SA
CE
LOW
t HA
t SA
WE
UB, LB
t HA
t PBW
t PBW
WORD 1
WORD 2
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t HD
t SD
DIN
t HD
t SD
DATAIN
VALID
DATAIN
VALID
UB_CEWR4.eps
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
11
ISSI
IS61LV12816L
®
DATA RETENTION SWITCHING CHARACTERISTICS
Min.
Typ.(1)
Max.
Unit
2.0
—
3.6
V
—
—
0.7
—
3
4
mA
See Data Retention Waveform
0
—
—
ns
See Data Retention Waveform
tRC
—
—
ns
Symbol
Parameter
Test Condition
Options
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 2.0V, CE ≥ VDD – 0.2V
tSDR
tRDR
Data Retention Setup Time
Recovery Time
Com.
Ind.
Note 1: Typical values are measured at VDD = 3.3V, TA = 25 C. Not 100% tested.
O
DATA RETENTION WAVEFORM (CE Controlled)
tSDR
Data Retention Mode
tRDR
VDD
VDR
CE
GND
12
CE ≥ VDD - 0.2V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
ISSI
IS61LV12816L
®
ORDERING INFORMATION:
Commercial Range: 0°C to +70°C
Speed (ns)
Order Part No.
Package
8
IS61LV12816L-8T
IS61LV12816L-8TL
Plastic TSOP (Type II)
Plastic TSOP (Type II), Lead-free
10
IS61LV12816L-10T
IS61LV12816L-10TL
Plastic TSOP (Type II)
Plastic TSOP (Type II), Lead-free
Industrial Range: –40°C to +85°C
Speed (ns)
Order Part No.
Package
8
IS61LV12816L-8BI
IS61LV12816L-8TI
mini BGA (6mm x 8mm)
Plastic TSOP (Type II)
10
IS61LV12816L-10BI
IS61LV12816L-10BLI
IS61LV12816L-10LQI
IS61LV12816L-10LQLI
IS61LV12816L-10TI
IS61LV12816L-10TLI
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm), Lead-free
LQFP
LQFP, Lead-free
Plastic TSOP (Type II)
Plastic TSOP (Type II), Lead-free
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05
13
ISSI
PACKAGING INFORMATION
®
LQFP (Low Profile Quad Flat Pack)
Package Code: LQ (44-pin)
D
D1
E
E1
θ
b
e
L1
L
SEATING
PLANE
A2
A A1
Low Profile Quad Flat Pack (LQ)
Ref. Std.
MS-026
No. Leads
44
Millimeters
Inches
Symbol Min
Max
Min
Max
A
—
1.60
—
0.063
A1
0.05
0.15
0.002
0.006
A2
1.35
1.45
0.053
0.057
b
0.30
0.45
0.012
0.018
C
0.09
0.20
0.004
0.008
D
12.00 BSC
0.472 BSC
D1
10.00 BSC
0.394 BSC
E
12.00 BSC
0.472 BSC
E1
10.00 BSC
0.394 BSC
e
0.80 BSC
0.031 BSC
L
0.45
0.75
0.018
0.030
L1
1.00 REF.
0.039 REF.
θ
0o
7o
0o
7o
Notes:
1. All dimensioning and tolerancing
conforms to ANSI Y14.5M-1982.
2. Dimensions D1 and E1 do not include
mold protrusions. Allowable protrusion is
0.25 mm per side. D1 and E1 include
mold mismatch.
3. Controlling dimension: millimeters.
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
05/30/03
ISSI
®
PACKAGING INFORMATION
Mini Ball Grid Array
Package Code: B (48-pin)
Top View
Bottom View
φ b (48x)
1
2
3
4
5 6
6
A
4
3
2
1
A
e
B
B
C
C
D
D
D
5
D1
E
E
F
F
G
G
H
H
e
E
E1
A2
Notes:
1. Controlling dimensions are in millimeters.
A
A1
SEATING PLANE
mBGA - 6mm x 8mm
mBGA - 8mm x 10mm
MILLIMETERS
INCHES
MILLIMETER
Sym.
Min. Typ. Max.
Min. Typ. Max.
N0.
Leads
48
Sym.
Min. Typ. Max.
N0.
Leads
48
INCHES
Min. Typ. Max.
A
—
—
1.20
—
—
0.047
A
—
—
1.20
—
—
0.047
A1
0.24
—
0.30
0.009
—
0.012
A1
0.24
—
0.30
0.009
—
0.012
A2
0.60
—
—
0.024
—
—
A2
0.60
—
—
0.024
—
—
D
7.90
—
8.10
0.311
—
0.319
D
9.90
—
10.10
0.390
—
0.398
D1
E
5.25 BSC
5.90
—
6.10
0.207 BSC
0.232
—
0.240
D1
E
5.25 BSC
7.90
—
0.207 BSC
8.10
0.311
—
0.319
E1
3.75 BSC
0.148 BSC
E1
3.75 BSC
0.148 BSC
e
0.75 BSC
0.030 BSC
e
0.75 BSC
0.030 BSC
0.012 0.014 0.016
b
b
0.30 0.35
0.40
0.30
0.35
0.40
0.012 0.014 0.016
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
01/15/03
ISSI
®
PACKAGING INFORMATION
Plastic TSOP
Package Code: T (Type II)
N
N/2+1
E1
1
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
E
N/2
D
SEATING PLANE
A
ZD
.
b
e
Symbol
Ref. Std.
No. Leads
A
A1
b
C
D
E1
E
e
L
ZD
α
Millimeters
Min
Max
Inches
Min
Max
(N)
32
—
1.20
—
0.047
0.05 0.15
0.002 0.006
0.30 0.52
0.012 0.020
0.12 0.21
0.005 0.008
20.82 21.08
0.820 0.830
10.03 10.29
0.391 0.400
11.56 11.96
0.451 0.466
1.27 BSC
0.050 BSC
0.40 0.60
0.016 0.024
0.95 REF
0.037 REF
0°
5°
0°
5°
L
α
A1
Plastic TSOP (T - Type II)
Millimeters
Inches
Min
Max
Min Max
44
—
1.20
—
0.047
0.05 0.15
0.002 0.006
0.30 0.45
0.012 0.018
0.12 0.21
0.005 0.008
18.31 18.52
0.721 0.729
10.03 10.29
0.395 0.405
11.56 11.96
0.455 0.471
0.80 BSC
0.032 BSC
0.41 0.60
0.016 0.024
0.81 REF
0.032 REF
0°
5°
0°
5°
Millimeters
Min
Max
C
Inches
Min
Max
50
—
1.20
0.05 0.15
0.30 0.45
0.12 0.21
20.82 21.08
10.03 10.29
11.56 11.96
0.80 BSC
0.40 0.60
0.88 REF
0°
5°
—
0.047
0.002 0.006
0.012 0.018
0.005 0.008
0.820 0.830
0.395 0.405
0.455 0.471
0.031 BSC
0.016 0.024
0.035 REF
0°
5°
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
06/18/03