DSSK 80-0025B DSSK 80-003B IFAV = 2x40 A VRRM = 25 / 30 V VF = 0.39 V Power Schottky Rectifier with common cathode VRSM VRRM V V 25 30 25 30 TO-247 AD Type A DSSK 80-0025B DSSK 80-003B C A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 130°C; rectangular, d = 0.5 TC = 130°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 70 40 80 A A A 600 A 10 mJ 6 A 5000 V/µs -55...+150 150 -55...+150 °C °C °C 155 W 0.8...1.2 Nm 6 g (dv/dt)cr TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM 40 250 mA mA VF IF = 40 A; IF = 40 A; IF = 80 A; 0.39 0.48 0.56 V V V 0.8 K/W K/W Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see pages D2 - 87-88 Characteristic Values typ. max. TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 232 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSSK 80-0025B DSSK 80-003B 100 10000 10000 mA A pF TVJ = 150°C 1000 IR IF CT 125°C 100 10 100°C 10 TVJ = 150°C 125°C 25°C 1 0.0 75°C 1 50°C TVJ= 25°C 25°C 0.1 0.2 V0.6 0.4 VF 0 15 0 20 V 25 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 80 A 70 40 W 35 60 P(AV) 30 d = 0.5 10 VR Fig. 1 Maximum forward voltage drop characteristics IF(AV) 1000 5 DC 50 25 40 20 30 15 20 10 10 5 5 10 15 20 V 25 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM d= DC 0.5 0.33 0.25 0.17 0.08 0 0 0 40 80 120 TC 0 160 °C Fig. 4 Average forward current IF(AV) versus case temperature TC 10 20 30 40 50 IF(AV) 60 A µs tP Fig. 5 Forward power loss characteristics 1 K/W ZthJC D=0.5 0.33 0.25 0.17 Single Pulse 0.08 0.1 DSSK 80-0025B 0.001 0.01 0.1 s 1 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2002 IXYS All rights reserved Note: All curves are per diode 2-2