DSSK 60-0045B IFAV = 2x30 A VRRM = 45 V VF = 0.44 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A DSSK 60-0045B TO-247 AD A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 120°C; rectangular, d = 0.5 TC = 120°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 18 A; L = 180 µH; TVJ = 25°C; non repetitive 46 mJ IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1.8 A (dv/dt)cr 70 30 60 A A A 500 A 1000 TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions V/µs -55...+150 150 -55...+150 °C °C °C 115 W 0.8...1.2 6 Nm g Characteristic Values typ. max. IR TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM 20 200 mA mA VF IF = 30 A; IF = 30 A; IF = 60 A; 0.44 0.50 0.68 V V V 1.1 K/W K/W RthJC RthCH TVJ = 125°C TVJ = 25°C TVJ = 125°C 0.25 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf IXYS reserves the right to change limits, Conditions and dimensions. 1-2 232 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified © 2002 IXYS All rights reserved DSSK 60-0045B 100 10000 1000 A 150°C mA IR IF pF CT 100 125°C 100°C 10 1000 10 TVJ = 150°C 125°C 25°C 50°C 1 75°C 25°C 1 0.0 TVJ= 25°C 100 0.1 0.2 0.4 0.6 0.8 V 1.0 0 10 20 30 Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 80 A 70 0 40 V 50 VR VF 10 20 30 VR 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 60 W 50 A P(AV) 60 IF(AV) d=0.5 50 IFSM 40 DC 40 30 30 d= DC 0.5 0.33 0.25 0.17 0.08 20 20 10 10 0 0 0 40 80 120 TC 160°C Fig. 4 Average forward current IF(AV) versus case temperature TC 0 10 20 30 40 50 IF(AV) 60 A µs tP Fig. 5 Forward power loss characteristics 2 1 K/W ZthJC D=0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) 0.01 0.0001 DSSK 60-0045B 0.001 0.01 0.1 s 1 10 t Note: All curves are per diode 232 Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2002 IXYS All rights reserved 2-2