Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE(sat) = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 8 A I C90 TC = 90°C 4 A ICM TC = 25°C, 1 ms 16 A ICM = 8 A SSOA VGE = 15 V, TVJ = 125°C, RG = 120 W (RBSOA) Clamped inductive load PC TC = 25°C TO-220AB (IXGP) G TO-263 AA (IXGA) @ 0.8 VCES TJ 40 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g CE G E C (TAB) Features International standard packages JEDEC TO-220AB and TO-263AA High current handling capability MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. BVCES IC = 250 mA, VGE = 0 V 1000 VGE(th) IC = 100 mA, VCE = VGE 2.5 I CES Characteristic Values Typ. Max. V 5.0 V VCE= 0.8 VCES TJ = 25°C 25 mA VGE = 0 V TJ = 125°C 250 mA ±100 nA 2.7 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15V © 2000 IXYS All rights reserved 2.2 AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies discharge Capacitor Advantages Easy to mount with one screw Reduces assembly time and cost High power density 98735 (7/00) IXGA 4N100 IXGP 4N100 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs TO-220 AB Dimensions Characteristic Values Min. Typ. Max. IC = IC90; VCE = 10 V, 2.5 4 S Pulse test, t £ 300 ms, duty cycle £ 2 % 343 pF 21 pF 5 pF 21 A 13.6 nC 2.5 nC 6.5 nC Inductive load, TJ = 25°C 20 ns = IC90, VGE = 15 V 25 ns Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres IC(ON) VGE = 10V, VCE = 10V Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 390 800 ns 340 700 ns 0.9 2.0 mJ 20 ns 25 ns 0.16 mJ 700 ns 520 ns 2.0 mJ RthJC RthCK 3.1 TO-220 Pins: 1 - Gate 3 - Emitter K/W 0.5 2 - Collector 4 - Collector Bottom Side TO-263 AA Outline K/W 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Dim. Gate Collector Emitter Collector Bottom Side Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025