MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML725B16F/ML720J16S/ML725J16F DESCRIPTION FEATURES ML7xx16 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1310nm. λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML7xx16 can operate in the wide temperature range form -20ºC to 85ºC without any temperature control. λ/4 phase shifted grating structure Wide temperature range operation (-20ºC to 85ºC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 11GHz) APPLICATION ABSOLUTE MAXIMUM RATINGS 2.5Gbps transmission Parameter Symbol Ratings Unit CW 6 mW Conditions Po Output power IF Laser forward current - 200 mA VRL Laser reverse voltage - 2 V IRD PD forward current - 2 mA VRD Tc PD reverse voltage - 20 Operation temperature - -20 ~+85 ºC Storage temperature - -40 ~+100 ºC Tstg V ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC) Symbol Ith Iop Vop η λp SMSR θ// θ⊥ fr tr,tf Parameter Conditions Limits Min. Typ. Max. Unit CW - 10 15 CW,Tc=85ºC - 35 50 mA mA Operation current CW,Po=5mW - 30 75 40 100 mA mA Operating voltage CW,Po=5mW,Tc=85ºC CW,Po=5mW CW,Po=5mW 0.18 1.1 0.25 1.8 - V mW/mA Threshold current Slope efficiency Peak wavelength Side mode suppression ratio CW,Po=5mW,Tc=-20ºC~+85ºC 1290 1310 1330 nm CW,Po=5mW,Tc=-20ºC~+85ºC 45 - dB Beam divergence angle (parallel) CW,Po=5mW 35 - 25 40 deg. - 30 47 deg. - 11 - GHz - 100 150 psec 0.1 - 2.0 mA (perpendicular) CW,Po=5mW Resonance frequency Rise and fall time(10%-90%) 2.48832Gbps, Ibias=Ith,Ipp=40mA 2.48832Gbps, Ibias=Ith,Ipp=40mA not including package Im Id Monitoring current (PD) CW,Po=5mW,VRD=1V Dark current (PD) VRD=5V - - 0.1 µA Ct Capacitance (PD) VRD=5V,f=1MHz - 10 20 pF MITSUBISHI ELECTRIC Jan. 2002 MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE OUTLINE DRAWINGS ML725B16F (Dimension:mm) φ 5.6 +0 -0.03 φ 4.25 φ 3.55±0.1 (0.25) 2-90º (3) Case (0.25) (2) (4) 1±0.1 0.25±0.03 (Glass) (3) (4) (1) PD LD φ 2.0Min. ±0.1 2.1±0.15 1.2 1.27 ±0.03 φ 1.0Min. Emitting Facet (2) (1) Reference Plane 18 ±1 ML725B16F φ 2.0±0.25 (P.C.D.) 4-φ 0.45±0.05 (2) (1) (Dimension:mm) φ 5.6 +0 -0.03 φ 4.25 φ 3.55±0.1 ML720J16S (0.25) (3) 2-90º (2) (1) Case (0.25) (4) PD LD φ 2.0Min. φ 1.0Min. ±0.1 2.1±0.15 1.2 1.27 ±0.03 0.25±0.03 (Glass) 1±0.1 18 ±1 (3) (2) (4) Emitting Facet (1) Reference Plane ML720J16S φ 2.0±0.25 (P.C.D.) 4-φ 0.45±0.05 (2) (1) φ 5.6 +0 -0.03 ML725J16F φ 4.3 (Dimension:mm) (0.25) Top View (1) (4) (3) Case (2) (0.25) 2-90º (3) (4) 1±0.1 PD 1.27 ±0.03 3.97 ±0.15 Emitting Facet 18 ±1 LD (2) Reference Plane 1.2 ±0.1 (7.51) φ 3.75±0.1 ML725J16F φ 2.0±0.25 (P.C.D.) 4-φ 0.45±0.05 (1) (2) (1) MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPICAL CHARACTERISTICS Light output Po (mW) 10 8 6 -20°C 4 25°C 50°C 2 85°C 0 0 20 40 60 80 100 Forward current If (mA) Fig. 1 Light output v.s. forward current Light output Po (mW) -30 Po=5mW -20°C -40 25°C -50 50°C 85°C -60 -70 -80 -90 1290 1300 1310 1320 1330 Forward current If (mA) Fig. 2 Spectrum Relative light output 1.2 θ⊥ θ// Po=5mW Tc=25°C 1.0 0.8 0.6 0.4 0.2 0.0 -60 Fig. 3 Far field pattern -40 -20 0 Angle (°) 20 40 60