MITSUBISHI LASER DIODES ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES Notice: Some parametric limits are subject to change. TYPE NAME ML920J45S , ML920K45S, ML920Y45S ML925B45F , ML925C45F FEATURES DESCRIPTION •1550 or 1520nm typical emission wavelength, FP-LDs •Low threshold current, low operating current •Wide temperature range operation (Tc=-40 to 85deg.C) •φ5.6mm TO-CA N package Flat window cap : ML920J45S, ML925B45F Ball lens cap : ML920K45S, ML925C45F, ML920Y45S ML9XX45 series are InGaAsP laser diodes which provide a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW. ML9XX45 are hermetically sealed devices having the photo diode for optical output monitoring. This is suitable for such APPLICATION applications as FTTH (Fiber to the Home)systems. •~155Mbps FTTH system ABSOLUTE MAXIMUM RATINGS Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Laser reverse voltage PD reverse voltage PD forward current Operation temperature Storage temperature Conditions CW - Ratings 6[4] 2 20 2 -40 to +85 -40 to +100 Unit mW V V mA deg.C deg.C ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC) Symbol Parameter Ith Iop Vop η Threshold current Operation current Operating voltage Slope efficiency λc Center wavelength ∆λ θ∥ θ⊥ tr,tf Im Id Ct Pf(Note2) Df(Note2) Spectral Width Beam divergence angle(parallel) Beam divergence angle (perpendicular) Rise and Fall time (10%-90%) Monitor Current (PD) Dark Current (PD) Capacitance (PD) Fiber Coupling characteristics at peak coupling<3> Test Conditions Min. Typ. Max. Unit 3 10 --0.15[0.1] 1520 1495 ----- 10 30 1.1 0.25[0.2] 1550 1520 1.5 25[11] 20 50 1.5 0.5 1580 1544 3 --- mA mA V mW/mA CW, Po=5mW[3mW] --- 30[11] --- deg. Ib=Ith,Po=5mW [3mW],10-90% CW, Po=5mW[3mW], VRD=1V, VRD=10V VRD=10V, f=1MHz CW, PL=3mW,SI10/125 ML920K45S CW, PL=3mW ML925C45F SI10/125 ML920Y45S --0.1 ----0.2 0.3 0.5 --10 0.5 0.7 1.0 0.1 20 --- nsec mA µA pF mW 5.0 5.8 6.2 6.0 6.5 7.0 CW CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] -01spec -02spec CW, Po=5mW, [3mW]RMS(-20dB) CW, Po=5mW[3mW] CW, Po=5mW[3mW] nm nm deg. mm Note : <1> [ ]applied to the lens cap type. Note : <2> Pf,Df are applied to the ball lens type. Note : <3> Df is a distance between reference plane of the base to the fiber. MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES OUTLINE DRAWINGS Dimension : mm ML920J45S +0 φ5.6 -0.03 φ4.25 (3) Ｙ ML925B45F (1) (3) 2-90° Case LD (0.25) (1) (2) Ｘ (2) PD (0.25) (4) (4) ML920J45S 1±0.1 (3) φ1.5Min. 2.1±0.15 Emitting Facet Reference Plane (1) (2) 1.2 PD (4) 18 ±1 ±0.1 Case LD φ1.0Min. 1.27 ±0.03 (Glass) 0.25 ±0.03 φ3.55±0.1 φ2.0±0.25 (P.C.D.) ML925B45F Pin Connection 4-φ0.45±0.05 (1) ( Top view ) (2) Dimension : mm +0 ML920K45S φ5.6 -0.03 φ4.25 (3) Ｙ ML925C45F (1) (2) (2) Ｘ PD (4) (0.25) 2-90° (3) (1) Case LD (0.25) (4) ML920K45S 1±0.1 φ3.55±0.1 φ1.5±0.005 (3) Case 1.27 ±0.03 (3.05) 3.9 ±0.2 Emitting Facet Reference Plane (1) (2) PD 1.2 18 ±1 ±0.1 (5.8) LD (4) φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 (1) (2) MITSUBISHI ELECTRIC ML925C45F Pin Connection ( Top view ) May 2004 MITSUBISHI LASER DIODES ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES OUTLINE DRAWINGS Dimension : mm ML920Y45S +0 φ5.6 -0.03 φ4.25 Ｙ (0.25) (1) (2) (3) Ｘ (0.25) 2-90° (3) (4) Case LD (1) 1±0.1 (2) PD 1.27 ±0.03 ML920Y45S (3.0) (6.5) 18 ±1 ±0.1 (4) Emitting Facet Reference Plane ( Top view ) 1.2 3.6 ±0.2 φ3.55±0.1 φ1.5±0.005 φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 (1) (2) MITSUBISHI ELECTRIC May 2004