LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 Ga 3 18 2.5 15 2 12 Associated Gain, GA (dB) • LOW COST METAL/CERAMIC PACKAGE 24 3.5 Noise Figure, NF (dB) • LG = 0.3 µm, WG = 280 µm NE76084S 9 1.5 1 6 NF 3 0.5 0 DESCRIPTION 0 1 10 The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features a recessed 0.3 micron gate and triple epitaxial technology. 20 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) NE76084S2 84S PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA PARAMETERS AND CONDITIONS UNITS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f = 12 GHz dB Associated Gain at VDS = 3 V, IDS = 10 mA, f = 12 GHz dB P1dB Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz dBm IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 MIN TYP MAX 1.6 1.8 8.0 9.0 14.5 mA 15 30 50 VP Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA V -3.0 -0.8 -0.5 gm Transconductance, VDS = 3 V, IDS = 10 mA mS 30.0 40.0 70.0 1.0 10.0 IGSO RTH (CH-A) Gate to Source Leakage Current, VGS = -4 V Thermal Resistance (Channel to Ambient) µA °C/W 625 Notes: 1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "gono-go" screening test with the fixture tuned for the "generic" type but not for each specimen. 2. Package type 84S recommended for use below 13 GHz. Refer to NE76083A for use above 13 GHz. California Eastern Laboratories NE76084S ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5 VGD Gate to Drain Voltage V VGS Gate to Source Voltage V TYPICAL NOISE PARAMETERS1 VDS = 3 V, IDS = 10 mA ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 -5 1 0.50 20 .93 15 .58 -3 2 0.55 17 .88 31 .51 4 0.60 14 .72 69 .46 6 0.80 12 .60 107 .37 8 1.00 11 .55 131 .32 IDS Drain Current mA IDSS PIN RF Input (CW) dBm +15 TCH Channel Temperature °C 175 10 1.30 10 .50 163 .26 Storage Temperature °C -65 to +175 12 1.60 9 .46 -165 .21 mW 240 14 1.90 8.5 .46 -135 .17 16 2.20 7.9 .44 -100 .15 18 2.50 7.3 .46 -64 .14 TSTG Total Power Dissipation PT Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. Note: 1. Noise parameters include bond wires: Gate: 2 wires total, 1 per bond pad, 0.0139" long each wire. Drain: 2 wires total, 1 per bond pad, 0.0115" long each wire. Sources: 4 wires total, 2 per side, 0.0066" long each wire. Wire: 0.0007" diameter, gold. TYPICAL PERFORMANCE CURVES (TA = 25 °C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT 2.5 Infinite Heat sink Free Air 200 150 100 2 10 GA NF 5 1.5 50 0 0 0 25 50 75 100 125 150 175 0 200 5 10 15 20 Ambient Temperature, TA (°C) Drain Current, IDS (mA) DRAIN CURRENT vs. GATE VOLTAGE (TYP) DC PERFORMANCE 35 35 30 30 Drain Current, IDS (mA) Drain Current, IDS (mA) 15 250 Noise Figure, NF (dB) Total Power Dissipation, PT (mW) 300 25 20 15 10 25 VGS = 0 V 25 20 VGS = -. 2 V 15 10 VGS = -.4 V 5 5 VGS = -.6 V 0 0 -3 -2.5 -2 -1.5 -1 -0.5 0 Gate to Source Voltage, VGS (V) 0.5 0 0.5 1 1.5 2 2.5 3 Drain Voltage, VDS (V) 3.5 4 Associated Gain, GA (dB) POWER DERATING CURVE NE76084S TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) +90˚ 5 j50 j25 +120˚ j100 +60˚ 4 j150 j10 +30˚ +150˚ S11 18 GHz j250 2 S22 18 GHz 50 10 0 100 S11 S22 .1 GHz .1 GHz +180 ˚ – S12 .1 GHz -j250 -j10 Coordinates in Ohms Frequency in GHz (VDS = 3 V, IDS = 10 mA) -j150 -j100 -j25 .05 5 .15 .2 .25 0˚ S21 .1 GHz S21 18 GHz -150˚ S12 18 GHz -30˚ -60˚ -120˚ -90˚ -j50 NE76084S VDS = 3 V, ID = 10 mA FREQUENCY S11 (GHz) MAG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.999 0.999 0.999 0.989 0.978 0.955 0.915 0.859 0.804 0.757 0.714 0.673 0.639 0.607 0.570 0.544 0.532 0.527 0.515 0.500 0.511 0.544 S21 S12 S22 ANG MAG ANG MAG ANG MAG -2.2 -4.1 -10.4 -20.6 -30.6 -40.0 -58.5 -76.1 -92.5 -108.9 -124.2 -138.0 -152.2 -166.3 178.4 162.6 146.7 131.9 114.9 98.0 80.1 63.7 3.623 3.607 3.599 3.546 3.508 3.428 3.288 3.091 2.936 2.770 2.604 2.448 2.323 2.237 2.148 2.061 2.009 1.947 1.892 1.824 1.764 1.709 178.1 176.1 170.3 160.5 151.8 142.5 125.4 109.4 94.4 79.3 65.7 52.9 40.0 27.5 15.4 2.7 -9.4 -20.9 -34.0 -47.2 -60.0 -73.2 0.003 0.005 0.014 0.023 0.033 0.043 0.061 0.073 0.085 0.091 0.099 0.097 0.099 0.101 0.107 0.107 0.111 0.116 0.125 0.136 0.133 0.146 87.8 86.6 83.8 73.9 68.7 63.8 50.8 40.1 31.3 22.1 14.8 9.5 4.6 -0.3 -5.9 -10.1 -12.6 -15.5 -19.6 -26.1 -35.1 -43.0 0.682 0.682 0.688 0.682 0.674 0.667 0.643 0.611 0.581 0.554 0.529 0.512 0.497 0.489 0.483 0.466 0.447 0.430 0.421 0.429 0.435 0.433 S21 (dB) (dB 0.06 0.04 0.02 0.12 0.14 0.21 0.31 0.43 0.52 0.63 0.71 0.84 0.94 1.02 1.06 1.17 1.19 1.20 1.18 1.14 1.17 1.05 11.1 11.1 11.1 10.9 10.9 10.7 10.3 9.8 9.3 8.8 8.3 7.7 7.3 6.9 6.6 6.2 6.0 5.7 5.5 5.2 4.9 4.6 30.8 28.5 24.1 21.8 20.2 19.0 17.3 16.2 15.3 14.8 14.2 14.0 13.7 12.5 11.4 10.3 9.9 9.5 9.2 8.9 8.6 9.2 ANG -1.4 -2.7 -6.5 -13.8 -20.0 -26.0 -38.1 -49.4 -60.3 -71.0 -80.7 -90.0 -99.3 -108.3 -118.2 -128.3 -138.5 -149.6 -162.6 -176.3 170.0 159.0 MAG1 K Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76084S TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) VDS = 3 V, IDS = 30 mA FREQUENCY S11 (GHz) MAG 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.999 0.999 0.996 0.985 0.969 0.945 0.898 0.836 0.776 0.719 0.674 0.632 0.599 0.557 0.527 0.506 0.499 0.493 0.485 0.479 0.492 0.526 S21 S12 ANG MAG ANG MAG -2.3 -4.5 -11.1 -22.0 -32.7 -42.5 -61.8 -80.0 -97.7 -113.9 -129.5 -143.4 -158.2 -171.7 172.9 156.4 141.0 125.7 109.0 92.5 74.8 59.4 4.439 4.431 4.417 4.351 4.278 4.159 3.931 3.666 3.413 3.180 2.968 2.767 2.612 2.491 2.378 2.275 2.204 2.130 2.064 1.976 1.919 1.860 177.8 175.9 169.9 159.6 150.3 140.9 123.3 107.0 91.4 76.9 63.2 50.7 38.2 25.8 14.0 1.6 -10.3 -21.9 -34.6 -47.4 -60.3 -73.4 0.003 0.005 0.011 0.021 0.029 0.038 0.053 0.064 0.074 0.080 0.085 0.088 0.092 0.096 0.102 0.105 0.115 0.120 0.131 0.143 0.146 0.152 S22 ANG MAG 88.1 86.8 81.9 73.4 69.5 63.1 50.9 43.0 33.7 27.5 19.8 17.3 12.8 7.8 4.4 0.8 -3.9 -9.2 -12.1 -20.7 -29.6 -38.1 0.635 0.634 0.638 0.630 0.626 0.617 0.593 0.560 0.531 0.504 0.484 0.470 0.459 0.450 0.445 0.434 0.418 0.405 0.400 0.408 0.422 0.411 K ANG -1.3 -2.8 -6.6 -14.0 -19.9 -26.0 -37.9 -48.9 -58.8 -69.7 -79.0 -87.4 -96.8 -105.8 -115.0 -124.9 -134.2 -145.5 -158.7 -172.5 173.4 162.7 MAG1 S21 (dB) 0.05 0.03 0.07 0.15 0.18 0.26 0.36 0.48 0.60 0.72 0.83 0.93 1.01 1.10 1.13 1.19 1.15 1.17 1.12 1.08 1.05 1.01 12.9 12.9 12.9 12.7 12.6 12.3 11.8 11.2 10.6 10.0 9.4 8.8 8.3 7.9 7.5 7.1 6.8 6.5 6.2 5.9 5.6 5.3 (dB) 31.7 29.4 26.0 23.1 21.6 20.3 18.7 17.5 16.6 15.9 15.4 14.9 13.8 12.1 11.4 10.7 10.4 9.9 9.7 9.6 9.7 10.2 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84S 1.78 ± 0.2 ORDERING INFORMATION PART NUMBER AVAILABILITY NE76084S Bulk up to 1 K 84S 1 K/Reel 84S NE76084-T1 PACKAGE OUTLINE S 1.78 ± 0.2 D E S G 0.5 ± 0.1 (ALL LEADS) 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE