1.9 GHz AGC AMPLIFIER FEATURES UPC8119T UPC8119T GAIN vs. AGC VOLTAGE • FREQUENCY RESPONSE: 800 MHz to 1.9 GHz 20 • SUPPLY VOLTAGE RANGE: 2.7~3.3 V 10 • SUPER SMALL SURFACE MOUNT PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE • GAIN CONTROL RANGE UP TO 40 dB Gain, dB • VAGC: 0.6~2.3 V 0 -10 -20 DESCRIPTION The UPC8119T is a Silicon Monolithic Microwave Integrated Circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This device is suitable as an Automatic Gain Control Amplifier stage in cellular radios, GPS receivers, PCN, and test/measurement equipment. -30 0 1 2 3 VAGC Voltage, VAGC (V) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3.0 V, ZS = ZL = 50 Ω) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GCR GPMAX P1dB NF PARAMETERS AND CONDITIONS UPC8119T T06 UNITS MIN TYP MAX 15 Circuit Current (no signal) mA 7.5 11 Gain Control2f = 950 MHz, PIN = -30 dBm f = 1440 MHz, PIN = -30 dBm f = 1900 MHz, PIN = -30 dBm dB dB dB 40 35 50 45 22 Maximum Power Gain, f = 950 MHz, PIN = -30 dBm f = 1440 MHz, PIN = -30 dBm f = 1900 MHz, PIN = -30 dBm dB dB dB 10 10 12.5 13 12.5 dBm dBm dBm 0 +1 +3 +4 +3 Output Power at 1 dB compression, f = 950 MHz, GPMAX f = 1440 MHz, GPMAX f = 1900 MHz, GPMAX Noise Figure f = 950 MHz, GPMAX f = 1440 MHz, GPMAX f = 1900 MHz, GPMAX RLIN Input Return Loss ISOL Isolation f = 950 MHz, GPMAX f = 1440 MHz,GPMAX f = 950 MHz, GPMAX f = 1440 MHz, GPMAX dB dB dB 8.5 7.5 7.2 dB dB 3 3 6 6 dB dB 27 31 32 36 15 16 11.5 10.5 California Eastern Laboratories UPC8119T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RECOMMENDED OPERATING CONDITIONS RATINGS SYMBOLS Supply Voltage PARAMETERS UNITS MIN V 2.7 TYP MAX 3.0 3.3 VCC Supply Voltage V 3.6 VCC VAGC Gain Control Voltage V 3.6 VAGC Gain Control Voltage V 0.6 - 2.4 TOP Operating Temperature °C -40 25 +85 PIN Input Level dBm - - -181 Operating Frequency MHz 100 - 1900 AGC Pin Drive Current mA 0.5 - - TOP Operating Temperature °C -40 to +85 TSTG Storage Temperature °C -55 to +150 f Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. IAGC Note: 1. Padj ≤ -60 dBc @ ∆f = ± 50 kHz. Wave form condition: π/4 QPSK modulation signal, data rate = 42 kbps, roll off ratio = 0.5, PN9 pattern. PIN FUNCTIONS Pin No. Pin Voltage Description 1 IN — RF input pin. Input RF signal with 50 Ω source impedance through a coupling capacitor. External matching circuit is not required. 2 3 GND 0 Ground pin. This pin must be connected to system ground. Form ground pattern as wide as possible to minimize ground impedance. 4 Symbol Out Same as VCC through external inductor Equivalent Circuit 5 4 RF output pin. The output is an open collector with high impedance. External matching circuit is required. 1 2 3 5 VCC 2.7~3.3 6 VAGC 0~3.3 Supply voltage pin. This pin should be connected with a bypass capacitor (e.g., 1000 pF) to minimize ground impedance. 5 Gain Control pin. The gain slope vs. increasing AGC voltage is summarized below: 6 Device Gain Slope vs. VAGC UPC8119T Down 2 3 UPC8119T OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS (Top View) PACKAGE OUTLINE T06 +0.2 2.8 -0.3 C2M 3 +0.2 1.5 -0.1 2 3 0.95 4 1.9±0.2 2 0.95 5 2.9±0.2 1 +0.2 1.1 -0.1 1 1. 2. 3. 4. 5. 6. -0.05 0.3 +0.10 6 0.13±0.1 0.8 0 to 0.1 (Bottom View) 4 4 3 5 5 2 6 6 1 Package Markings: UPC8119T - C2M IN GND GND OUT VCC VAGC ORDERING INFORMATION Note: All dimensions are typical unless otherwise specified. PART NUMBER QUANTITY UPC8119T-E3 3K/Reel TEST CIRCUIT 1900 MHz 900 MHz C1 4 L2 4 RFOUT RFOUT C1 L1 L1 5 VCC L2 VCC 5 0.1µF 6 0.1µF VAGC 6 VAGC 0.1µF 0.1µF FOUT L1 L2 900 6.8nH 15nH 1.5pF C1 1900 100nH 5nH (TRL) 2.2pF Unless Noted All Other Caps = 1000pF Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 01/17/2002